US5378653A
Expired / Lapsed
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Method of forming aluminum based pattern
Assignee: Sony Corp
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Filing: 1993-03-24
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Granted: 1995-01-03
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Expires: 2013-03-24
Abstract
Abstract A method of forming an Al-based pattern whereby dry etching with high selectivity of an Al-based metallization layer and effective preventive measures for after-corrosion can be realized. An Al-based multilayer film is etched, for instance, by using an SOCl2 (thionyl chloride) / C2 mixed gas. At this time, thionyl and a C-S bond are introduced into a carbonaceous polymer CClx derived from decomposition products of a resist mask, so as to obtain strong chemical bond and electrostatic adsorption force, thereby raising etching durability. Therefore, incident ion energy necessary For anisotropic processing and the deposit amount of the carbonaceous polymer can be reduced, and resist selectivity and selectivity to an underlying layer can be improved. Also, particle pollution and after-corrosion can be controlled. If a compound such as S2F2 capable of releasing free S on dissociation due to electric discharge is added to SOCl2, pollution in a process can be reduced further. If, after the etching, residual chlorine is removed by O2 plasma ashing or plasma processing using a fluorine based gas, durability to after-corrosion can be improved further.
Inventors
- 👤 Toshiharu Yanagida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:16
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; Y; Y10; Y10S; Y10S438/00; Y10S438/963
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
49 words
A method of forming an aluminum based pattern comprising etching an aluminum based metallization layer on a substrate by using an etching gas containing a halogen compound having at least one functional group selected from the group consisting of thionyl and sulfuryl, and a halogen atom in a molecule.
Claim 2
Independent Claim
49 words
A method of forming an aluminum based pattern comprising etching an aluminum based metallization layer on a substrate by using an etching gas containing a halogen compound having at least one functional group selected from the group consisting of thionyl and sulfuryl, and a halogen atom in a molecule.
Claim 3
Dependent Claim
40 words
The method of forming an aluminum based pattern as claimed in claim 1 wherein said halogen compound is at least one kind of compound selected from the group consisting of thionyl chloride, thionyl bromide, thionyl chloride bromide, and sulfuryl chloride.
Claim 4
Dependent Claim
38 words
The method of forming an aluminum based pattern as claimed in claim 1 wherein, after said etching, a resist mask used for said etching and deposits formed during said etching are removed by combustion through oxygen plasma ashing.
Claim 5
Dependent Claim
36 words
The method of forming an aluminum based pattern as claimed in claim 1 wherein, after said etching, plasma processing is carried out by using a processing gas containing a fluorine based compound while heating said substrate.
Claim 6
Dependent Claim
44 words
The method of forming an aluminum based pattern as claimed in claim 1 wherein said aluminum based metallization layer is a multilayer film formed by stacking a titanium based barrier metal, an aluminum based material layer and a titanium based anti-reflection film in order.
Claim 7
Independent Claim
67 words
A method of forming an aluminum based pattern comprising etching an aluminum based metallization layer on a substrate by using an etching gas containing a halogen compound having at least one functional group selected from the group consisting of thionyl and sulfuryl and a halogen atom in a molecule, and a sulfur based compound capable of releasing sulfur in a plasma on dissociation due to electric discharge.
Claim 8
Independent Claim
67 words
A method of forming an aluminum based pattern comprising etching an aluminum based metallization layer on a substrate by using an etching gas containing a halogen compound having at least one functional group selected from the group consisting of thionyl and sulfuryl and a halogen atom in a molecule, and a sulfur based compound capable of releasing sulfur in a plasma on dissociation due to electric discharge.
Claim 9
Dependent Claim
35 words
The method of forming an aluminum based pattern as claimed in claim 6 wherein said etching is carried out by controlling temperature of said substrate to 90° C. and below while depositing at least sulfur.
Claim 10
Dependent Claim
38 words
The method of forming an aluminum based pattern as claimed in claim 6 wherein said halogen compound is at least one compound selected from the group consisting of thionyl chloride, thionyl bromide, thionyl chloride bromide, and sulfuryl chloride.
Claim 11
Dependent Claim
58 words
The method of forming an aluminum based pattern as claimed in claim 6 wherein said sulfur based compound at least one compound selected from the group consisting of S 3 Cl 2 , S 2 Cl 2 , SCl 2 , S 3 Br 2 , S 2 Br 2 , SBr 2 , and H 2 S.
Claim 12
Dependent Claim
38 words
The method of forming an aluminum based pattern as claimed in claim 6 wherein, after said etching, a resist mask used for said etching and deposits formed during said etching are removed by combustion through oxygen plasma ashing.
Claim 13
Dependent Claim
36 words
The method of forming an aluminum based pattern as claimed in claim 6 wherein, after said etching, plasma processing is carried out by using a processing gas containing a fluorine based compound while heating said substrate.
Claim 14
Dependent Claim
44 words
The method of forming an aluminum based pattern as claimed in claim 6 wherein said aluminum based metallization layer is a multilayer film formed by stacking a titanium based barrier metal, an aluminum based material layer and a titanium based anti-reflection film in order.
References Cited (Backward Citations)
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