Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making

Claim 1

A metal-oxide-semiconductor field effect transistor (MOSFET) comprising: a first SiC semiconductor contact layer; a SiC semiconductor channel layer supported by said first SiC semiconductor contact layer; a second SiC semiconductor contact layer supported by said SiC semiconductor channel layer, said SiC semiconductor channel and second SiC semiconductor contact layers having a plurality of gate region grooves extending completely therethrough and having a base surface and side surfaces; a plurality of metal gate layers, each one of said plurality of groove oxide layers covering the base surface and the side surfaces of a respective one of said plurality of gate region grooves; a plurality of metal gate layers, each one of said plurality of metal gate layers being supported by a respective one of said plurality of groove oxide layers and having first and second surfaces, the first surface being situated on a plane above said first SiC semiconductor contact layer and the second surface being situated on a plane below said second SiC semiconductor contact layer; a plurality of deposited oxide segments, each one of said plurality of deposited oxide segments being supported by a respective one of said plurality of metal gate layers and being substantially coplanar with said second SiC semiconductor contact layer; a first metal contact layer situated on the surface of said first SiC semiconductor contact layer; and a second metal contact layer situated on a portion of the surface of said second SiC semiconductor contact layer.