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Patent US5671176A successfully refreshed from Google Patents.
US5671176A
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Semiconductor memory device including program inhibition capacitors and method for controlling program-disturb of non-selected memory cells
Assignee: Samsung Electronics Co Ltd
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Filing: 1996-09-19
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Granted: 1997-09-23
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Expires: 2016-09-19
Abstract
Abstract An integrated circuit memory device includes a plurality of wordlines, a plurality of program inhibition lines, a plurality of serially connected memory cell transistors, and a plurality of program inhibition capacitors. Each of the memory cell transistors includes a gate connected to a respective one of the wordlines. Each of the program inhibition capacitors has a first terminal connected to a source/drain of a respective one of the memory cell transistors, and a second terminal connected to a respective one of the program inhibition lines. Related methods are also disclosed.
Inventors
- 👤 Dong-soo Jang
- 👤 Jung-Dal Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 17:21
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/34; G11C16/3418; G11C16/3427; G11C16/04; G11C16/0483; G11C16/10
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
85 words
An integrated circuit memory device comprising: a plurality of wordlines; a plurality of program inhibition lines; a plurality of serially connected memory cell transistors wherein each of said memory cell transistors includes a control gate connected to a respective one of said wordlines; and a plurality of program inhibition capacitors wherein each of said program inhibition capacitors has a first terminal connected to a respective one of said memory cell transistors and a second terminal connected to a respective one of said program inhibition lines.
Claim 2
Dependent Claim
85 words
An integrated circuit memory device comprising: a plurality of wordlines; a plurality of program inhibition lines; a plurality of serially connected memory cell transistors wherein each of said memory cell transistors includes a control gate connected to a respective one of said wordlines; and a plurality of program inhibition capacitors wherein each of said program inhibition capacitors has a first terminal connected to a respective one of said memory cell transistors and a second terminal connected to a respective one of said program inhibition lines.
Claim 3
Dependent Claim
24 words
An integrated circuit memory device according to claim 1 wherein said plurality of program inhibition lines are connected to a common program inhibition line.
Claim 4
Dependent Claim
24 words
An integrated circuit memory device according to claim 1 wherein each of said program inhibition lines corresponds to a respective one of said wordlines.
Claim 5
Dependent Claim
64 words
An integrated circuit memory device according to claim 1 further comprising: a bit line; a common source line; at least one string select transistor connected between said bit line and a first one of said serially connected memory cell transistors; and at least one ground select transistor connected between a last one of said serially connected memory cell transistors and said common source line.
Claim 6
Dependent Claim
152 words
An integrated circuit memory device according to claim 4 further comprising: a second bit line; a second plurality of serially connected memory cell transistors wherein each of said second plurality of memory cell transistors includes a control gate connected to a respective one of said wordlines; a second plurality of program inhibition capacitors wherein each of said second plurality of program inhibition capacitors has a first terminal connected to a respective one of said memory cell transistors of said second plurality and a second terminal connected to a respective one of said program inhibition lines; at least one second string select transistor connected between said second bit line and a first one of said serially connected memory cell transistors of said second plurality; and at least one second ground select transistor connected between a last one of said serially connected memory cell transistors of said second plurality and said common source line.
Claim 7
Dependent Claim
34 words
An integrated circuit memory device according to claim 1 wherein each of said memory cell transistors includes a floating gate which can be charged to control a threshold voltage of said memory cell transistor.
Claim 8
Dependent Claim
96 words
An integrated circuit memory device according to claim 1 further comprising: data programming means for programming a selected one of said memory cell transistors by providing a program inhibition voltage to said plurality of program inhibition lines, by providing a program voltage to a selected one of said wordlines connected to said selected memory cell transistor, and by providing a pass voltage to all of said wordlines other than said selected wordline wherein said pass voltage is higher than a threshold voltage of one of said memory cell transistors and lower than said program inhibition voltage.
Claim 9
Dependent Claim
42 words
An integrated circuit memory device according to claim 7 wherein said program inhibition voltage is on the order of 10 volts, said program voltage is on the order of 18 volts, and said pass voltage is on the order of 2 volts.
Claim 10
Dependent Claim
37 words
An integrated circuit memory device according to claim 1 further comprising: erasing means for erasing data from a selected one of said memory cell transistors by providing an erase voltage to a substrate of said memory device.
Claim 11
Dependent Claim
49 words
An integrated circuit memory device according to claim 1 further comprising: erasing means for erasing data from a selected one of said memory cell transistors by providing an erase voltage to a substrate of said memory device and by providing a power supply voltage to said program inhibition lines.
Claim 12
Dependent Claim
47 words
An integrated circuit memory device according to claim 1 further comprising: erasing means for erasing data from a selected one of said memory cell transistors by providing an erase voltage to a substrate of said memory device and by allowing said program inhibition lines to float electrically.
Claim 13
Dependent Claim
58 words
An integrated circuit memory device according to claim 1 further comprising: data read means for reading data from a selected one of said memory cell transistors by providing a power supply voltage to said program inhibition lines and by providing a signal on the order of 0 volts to a wordline connected to said selected memory cell transistor.
Claim 14
Dependent Claim
55 words
An integrated circuit memory device according to claim 1 further comprising: data read means for reading data from a selected one of said memory cell transistors by providing a signal on the order of 0 volts to a wordline connected to said selected memory cell transistor and by allowing said program inhibition lines to float.
Claim 15
Dependent Claim
36 words
An integrated circuit memory device according to claim 1 further comprising: stand-by means for allowing said wordlines and said program inhibition lines to float electrically thus putting said integrated circuit memory device in a stand-by state.
Claim 16
Dependent Claim
43 words
An integrated circuit memory device according to claim 1 further comprising: stand-by means for allowing said wordlines to float electrically and for providing a power supply voltage to said program inhibition lines thus putting said integrated circuit memory device in a stand-by state.
Claim 17
Independent Claim
173 words
A method for operating an integrated circuit memory device including a plurality of wordlines, a plurality of program inhibition lines, a plurality of serially connected memory cell transistors wherein each of said memory cell transistors includes a control gate connected to a respective one of said wordlines, a plurality of program inhibition capacitors wherein each of said capacitors has a first terminal connected to a respective one of said memory cell transistors and a second terminal connected to a respective one of said program inhibition lines, said method comprising the steps of: programming a selected one of said memory cell transistors by providing a program inhibition voltage to said plurality of program inhibition lines, by providing a program voltage to a selected one of said wordlines connected to said selected memory cell transistor, and by providing a pass voltage to all of said wordlines other than said selected wordline wherein said pass voltage is higher than a threshold voltage of one of said memory cell transistors and lower than said program inhibition voltage.
Claim 18
Independent Claim
173 words
A method for operating an integrated circuit memory device including a plurality of wordlines, a plurality of program inhibition lines, a plurality of serially connected memory cell transistors wherein each of said memory cell transistors includes a control gate connected to a respective one of said wordlines, a plurality of program inhibition capacitors wherein each of said capacitors has a first terminal connected to a respective one of said memory cell transistors and a second terminal connected to a respective one of said program inhibition lines, said method comprising the steps of: programming a selected one of said memory cell transistors by providing a program inhibition voltage to said plurality of program inhibition lines, by providing a program voltage to a selected one of said wordlines connected to said selected memory cell transistor, and by providing a pass voltage to all of said wordlines other than said selected wordline wherein said pass voltage is higher than a threshold voltage of one of said memory cell transistors and lower than said program inhibition voltage.
Claim 19
Dependent Claim
39 words
A method according to claim 16 wherein said program inhibition voltage is on the order of 10 volts, said program voltage is on the order of 18 volts, and said pass voltage is on the order of 2 volts.
Claim 20
Dependent Claim
34 words
A method according to claim 16 further comprising the step of: erasing data from a selected one of said memory cell transistors by providing an erase voltage to a substrate of said memory device.
Claim 21
Dependent Claim
46 words
A method according to claim 16 further comprising the step of: erasing data from a selected one of said memory cell transistors by providing an erase voltage to a substrate of said memory device and by providing a power supply voltage to said program inhibition lines.
Claim 22
Dependent Claim
44 words
A method according to claim 16 further comprising the step of: erasing data from a selected one of said memory cell transistors by providing an erase voltage to a substrate of said memory device and by allowing said program inhibition lines to float electrically.
Claim 23
Dependent Claim
54 words
A method according to claim 16 further comprising the step of: reading data from a selected one of said memory cell transistors by providing a power supply voltage to said program inhibition lines and by providing a signal on the order of 0 volts to a wordline connected to said selected memory cell transistor.
Claim 24
Dependent Claim
51 words
A method according to claim 16 further comprising the step of: reading data from a selected one of said memory cell transistors by providing a signal on the order of 0 volts to a wordline connected to said selected memory cell transistor and by allowing said program inhibition lines to float.
Claim 25
Dependent Claim
33 words
A method according to claim 16 further comprising the step of: allowing said wordlines and said program inhibition lines to float electrically thus putting said integrated circuit memory device in a stand-by state.
Claim 26
Dependent Claim
39 words
A method according to claim 16 further comprising the step of: allowing said wordlines to float electrically; and providing a power supply voltage to said program inhibition lines thus putting said integrated circuit memory device in a stand-by state.
Claim 27
Independent Claim
191 words
A method for programming a selected memory cell transistor of an integrated circuit memory device including a plurality of wordlines, a first plurality of serially connected memory cell transistors wherein each of said memory cell transistors of said first plurality includes a control gate connected to a respective one of said wordlines, and a second plurality of serially connected memory cell transistors wherein each of said memory cell transistors of said second plurality includes a control gate connected to a respective one of said wordlines, said method comprising the steps of: providing a program voltage to a selected one of said wordlines connected to said selected memory cell transistor of said first plurality of memory cell transistors; providing a pass voltage to all of said wordlines other than said selected wordline wherein said pass voltage is higher than a threshold voltage of one of said memory cell transistors; and boosting a potential of a channel region of a memory cell transistor of said second plurality of memory cell transistors connected to said selected wordline to a boost voltage on the order of at least about 70% that of the program voltage.
Claim 28
Independent Claim
191 words
A method for programming a selected memory cell transistor of an integrated circuit memory device including a plurality of wordlines, a first plurality of serially connected memory cell transistors wherein each of said memory cell transistors of said first plurality includes a control gate connected to a respective one of said wordlines, and a second plurality of serially connected memory cell transistors wherein each of said memory cell transistors of said second plurality includes a control gate connected to a respective one of said wordlines, said method comprising the steps of: providing a program voltage to a selected one of said wordlines connected to said selected memory cell transistor of said first plurality of memory cell transistors; providing a pass voltage to all of said wordlines other than said selected wordline wherein said pass voltage is higher than a threshold voltage of one of said memory cell transistors; and boosting a potential of a channel region of a memory cell transistor of said second plurality of memory cell transistors connected to said selected wordline to a boost voltage on the order of at least about 70% that of the program voltage.
Claim 29
Dependent Claim
43 words
A method according to claim 25 wherein said program voltage is on the order of 18 V, wherein said pass voltage is on the order of 2 V, and wherein said boost voltage is on the order of at least about 13 V.
References Cited (Backward Citations)
US5596523A
Cited
US5581504A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-09-22 | 2001-03-24 | 2001-09-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-09-22 | 2005-03-24 | 2005-09-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-09-22 | 2009-03-24 | 2009-09-23 | $7700.00 | Window Closed / Lapsed |