Electronic device

Claim 2

An electronic device which comprises; a couple of first conduction regions which are capable of confining carriers; a second conduction region having a higher energy level than those of said first conduction regions; and a first electrode for impressing a voltage on said first conduction regions; Wherein, when a voltage is impressed via said first electrode between said couple of first conduction regions, carriers are caused to move due to a tunneling effect from one of said first conduction regions via said second conduction region to the other of said first conduction regions; and when the voltage impressed between said couple of first conduction regions is removed, carriers are confined mainly in said one of said first conduction regions.

Claim 3

The electronic device according to claim 1, wherein the energy level of said second conduction region is quantized.

Claim 4

The electronic device according to claim 1, which further comprises a second electrode for applying a voltage to said second conduction region so as to lowering the energy level of Said second conduction region.

Claim 5

The electronic device according to claim 1, wherein said first electrode is adapted for impressing a voltage between said first conduction regions via an insulating film.

Claim 6

The electronic device according to claim 1, wherein said first electrode is Schottky-junctioned to said first conduction regions.

Claim 7

The electronic device according to claim 1, wherein said second conduction region is constituted with a random multi-tunnel barrier.

Claim 8

The electronic device according to claim 1, wherein said second conduction region is smaller in size than that of said first conduction region.

Claim 9

The electronic device according to claim 1, wherein said first conduction regions and said second conduction region are arranged in a substantially straight line.

Claim 10

The electronic device according to claim 1, wherein said second conduction region comprises a plurality of sub-conduction regions.

Claim 11

The electronic device according to claim 1, wherein said first conduction regions are one-dimensionally or two-dimensionally quantized, and said second conduction region is two-dimensionally or three-dimensionally quantized.

Claim 12

The electronic device according to claim 1, wherein said second conduction region comprises a plurality of sub-conduction regions and the energy level of said sub-conduction regions becomes higher as said sub-conduction regions are further distanced away from said first semiconductor region.

Claim 13

The electronic device according to claim 1, wherein a modulation dope layer consisting of a semiconductor region doped with an impurity for generating a carrier is formed on said first conduction regions and on said second conduction region.

Claim 14

The electronic device according to claim 1, wherein said electronic device is a memory device.

Claim 15

An electronic device which comprises; a first conduction region and a second conduction region both of which are capable of confining carriers; a third conduction region wherein carriers are free to move; a first electrode for impressing a voltage on said first conduction region; and a second electrode and a third electrode each functioning as an input and an output for passing an electric current to said third conduction region; wherein either one of an insulating layer and an energy barrier layer is interposed between said first electrode and said first conduction region, between said first conduction region and said second conduction region, and between said second conduction region and said third conduction region; and when a voltage is impressed between said first electrode and either one of said second and third electrode, or between said first electrode and said second and third electrodes, carriers are caused to move due to a tunneling effect between said first conduction regions and said second conduction region, while the carriers are inhibited from moving between said first electrode and said first conduction region as well as between said second conduction region and said third conduction region; and when the voltage impressed is removed, carriers are confined mainly in either one of said first conduction region and said second conduction region.

Claim 16

An electronic device which comprises; a first conduction region and a second conduction region both of which are capable of confining carriers; a third conduction region wherein carriers are free to move; a first electrode for impressing a voltage on said first conduction region; and a second electrode and a third electrode each functioning as an input and an output for passing an electric current to said third conduction region; wherein either one of an insulating layer and an energy barrier layer is interposed between said first electrode and said first conduction region, between said first conduction region and said second conduction region, and between said second conduction region and said third conduction region; and when a voltage is impressed between said first electrode and either one of said second and third electrode, or between said first electrode and said second and third electrodes, carriers are caused to move due to a tunneling effect between said first conduction regions and said second conduction region, while the carriers are inhibited from moving between said first electrode and said first conduction region as well as between said second conduction region and said third conduction region; and when the voltage impressed is removed, carriers are confined mainly in either one of said first conduction region and said second conduction region.

Claim 17

The electronic device according to claim 14, wherein when an electric current is passed while applying a potential difference between said first electrode and said second electrode, a magnitude of the current passing through said third conduction region changes depending on a region where said carrier is mainly confined in either one of said first conduction region and said second conduction region.

Claim 18

The electronic device according to claim 15, wherein when said first electrode is assumed to be a gate electrode, said second electrode is assumed to be a source electrode, and said third electrode is assumed to be a drain electrode, an electric current passing between said source and drain is modulated by applying a voltage between said gate electrode and said source or drain electrode in such a manner that the magnitude of said voltage applied is incapable of shifting said carrier between said first conduction regions and said second conduction region.

Claim 19

The electronic device according to claim 16, wherein said first conduction regions and said second conduction region comprises an impurity-doped semiconductor or an impurity-doped polycrystalline semiconductor.

Claim 20

The electronic device according to claim 16, wherein either said first conduction regions or said second conduction region comprises an impurity-doped polycrystalline semiconductor, and the other comprises an impurity-free polycrystalline semiconductor.

Claim 21

The electronic device according to claim 16, wherein said first conduction regions comprises an impurity-doped polycrystalline semiconductor, and said second conduction region comprises an aggregate of particles selected from the group consisting of semiconductor fine particles, metallic fine particles and quantum dots.

Claim 22

The electronic device according to claim 16, wherein at least either one of said first conduction regions and said second conduction region comprises either one of an aggregate of metallic fine particles and aggregate quantum dots.

Claim 23

The electronic device according to claim 16, wherein said electronic device is a memory device.