Semiconductor memory device having well region

Claim 2

A semiconductor memory device including a memory cell region and a peripheral circuit region, wherein said memory cell region includes a first well region of a first conductivity type and a memory cell field effect transistor of a second conductivity type formed in a surface of said first well region, said peripheral circuit region includes a second well region of the second conductivity type, a semiconductor region of the first conductivity type, and a complementary type field effect transistor constituted of a first field effect transistor of the first conductivity type formed in a surface of said second well region and a second field effect transistor of the second conductivity type formed in a surface of said semiconductor region, and a substrate potential generated within the semiconductor memory device applied to said first well region of said memory cell region, and a ground potential applied to said semiconductor region of said peripheral circuit region.

Claim 3

The semiconductor memory device according to claim 1, wherein said semiconductor region includes a semiconductor substrate of the first conductivity type, and said second well region of said peripheral circuit region is formed so as to extend to said memory cell region and to cover said first well region of said memory cell region.

Claim 4

The semiconductor memory device according to claim 1, wherein said semiconductor region of said peripheral circuit region includes a third well region of the first conductivity type, and said second well region is formed so as to cover said third well region and to extend to said memory cell region to cover said first well region of said memory cell region.

Claim 5

A semiconductor memory device including a memory cell region and a peripheral circuit region on a semiconductor substrate of a first conductivity type having a main surface, wherein said memory cell region includes a first well region of the first conductivity type formed on the main surface of said semiconductor substrate and a memory cell field effect transistor of a second conductivity type formed in a surface of said first well region, said peripheral circuit region includes a second well region of the second conductivity type formed in the main surface of said semiconductor substrate, a third well region of the first conductivity type formed in the main surface of said semiconductor substrate, a fourth well region of the second conductivity type formed so as to cover said third well region, and a complementary type field effect transistor constituted of a first field effect transistor of the first conductivity type formed in a surface of said second well region and a second field effect transistor of the second conductivity type formed in a surface of said third well region, and said second well region of the second conductivity type and said fourth well region of the second conductivity type are formed with a predetermined space so as to be isolated by said semiconductor substrate of the first conductivity type.

Claim 6

A semiconductor memory device including a memory cell region and a peripheral circuit region on a semiconductor substrate of a first conductivity type having a main surface, wherein said memory cell region includes a first well region of the first conductivity type formed on the main surface of said semiconductor substrate and a memory cell field effect transistor of a second conductivity type formed in a surface of said first well region, said peripheral circuit region includes a second well region of the second conductivity type formed in the main surface of said semiconductor substrate, a third well region of the first conductivity type formed in the main surface of said semiconductor substrate, a fourth well region of the second conductivity type formed so as to cover said third well region, and a complementary type field effect transistor constituted of a first field effect transistor of the first conductivity type formed in a surface of said second well region and a second field effect transistor of the second conductivity type formed in a surface of said third well region, and said second well region of the second conductivity type and said fourth well region of the second conductivity type are formed with a predetermined space so as to be isolated by said semiconductor substrate of the first conductivity type.

Claim 7

A semiconductor memory device including a memory cell region and a peripheral circuit region on a semiconductor substrate of a first conductivity type having a main surface, wherein said memory cell region includes a first well region of the first conductivity type formed on the main surface of said semiconductor substrate and a memory cell field effect transistor of a second conductivity type formed in a surface of said first well region, said peripheral circuit region includes a second well region of the second conductivity type formed in the main surface of said semiconductor substrate, and a complementary type field effect transistor constituted of a first field effect transistor of the first conductivity type formed in a surface of said second well region and a second field effect transistor of the second conductivity type formed in the main surface of said semiconductor substrate, and said second well region of the second conductivity type of said peripheral circuit region having a second source/drain region of the first conductivity type formed in the surface thereof is connected to a power supply within the semiconductor memory device having a voltage obtained by decreasing a voltage of a power supply external to the semiconductor memory device by the power supply generating means within the semiconductor memory device.

Claim 8

A semiconductor memory device including a memory cell region and a peripheral circuit region on a semiconductor substrate of a first conductivity type having a main surface, wherein said memory cell region includes a first well region of the first conductivity type formed on the main surface of said semiconductor substrate and a memory cell field effect transistor of a second conductivity type formed in a surface of said first well region, said peripheral circuit region includes a second well region of the second conductivity type formed in the main surface of said semiconductor substrate, and a complementary type field effect transistor constituted of a first field effect transistor of the first conductivity type formed in a surface of said second well region and a second field effect transistor of the second conductivity type formed in the main surface of said semiconductor substrate, and said second well region of the second conductivity type of said peripheral circuit region having a second source/drain region of the first conductivity type formed in the surface thereof is connected to a power supply within the semiconductor memory device having a voltage obtained by decreasing a voltage of a power supply external to the semiconductor memory device by the power supply generating means within the semiconductor memory device.

Claim 9

The semiconductor memory device according to claim 4, wherein said peripheral circuit region includes an input protecting circuit having a source/drain region of the second conductivity type, and said source/drain region of the second conductivity type is formed in a semiconductor region of the first conductivity type connected to a substrate potential generated by internal circuitry.

Claim 10

The semiconductor memory device according to claim 5, wherein said peripheral circuit region includes an input protecting circuit having a source/drain region of the second conductivity type, and said source/drain region of the second conductivity type is formed in a semiconductor region of the first conductivity type connected to a substrate potential generated by internal circuitry.

Claim 11

A semiconductor memory device, comprising: a semiconductor substrate having a main surface; a first well region of a first conductivity type formed in a predetermined region of the main surface of said semiconductor substrate with a first depth from the main surface of said semiconductor substrate; a second well region of a second conductivity type formed in a predetermined region of a main surface of said first well region with a second depth from the main surface of said first well region; a pair of first source/drain regions of first conductivity type formed with a predetermined space so as to sandwich a first channel region in a predetermined region of a main surface of said second well region with a predetermined depth from the main surface of said second well region; a first gate electrode formed on said first channel region with a first gate insulating film therebetween; a pair of second source/drain regions of the first conductivity type formed with a predetermined space so as to sandwich a second channel region in a predetermined region of the main surface of said semiconductor substrate with a predetermined depth from the main surface of said semiconductor substrate; a second gate electrode formed on said second channel region with a second gate insulating film therebetween; and an element isolation film formed on the main surface of said semiconductor substrate, said first well region, and said second well region positioned between said first source/drain regions and said second source/drain regions.

Claim 12

A semiconductor memory device, comprising: a semiconductor substrate having a main surface; a first well region of a first conductivity type formed in a predetermined region of the main surface of said semiconductor substrate with a first depth from the main surface of said semiconductor substrate; a second well region of a second conductivity type formed in a predetermined region of a main surface of said first well region with a second depth from the main surface of said first well region; a pair of first source/drain regions of first conductivity type formed with a predetermined space so as to sandwich a first channel region in a predetermined region of a main surface of said second well region with a predetermined depth from the main surface of said second well region; a first gate electrode formed on said first channel region with a first gate insulating film therebetween; a pair of second source/drain regions of the first conductivity type formed with a predetermined space so as to sandwich a second channel region in a predetermined region of the main surface of said semiconductor substrate with a predetermined depth from the main surface of said semiconductor substrate; a second gate electrode formed on said second channel region with a second gate insulating film therebetween; and an element isolation film formed on the main surface of said semiconductor substrate, said first well region, and said second well region positioned between said first source/drain regions and said second source/drain regions.

Claim 13

A semiconductor memory device, comprising: a semiconductor substrate having a main surface; a first well region of a second conductivity type formed in a predetermined region of the main surface of said semiconductor substrate; a second well region of a first conductivity type formed in the main surface of the semiconductor substrate within said first well region; an element isolation film formed on the main surface of said semiconductor substrate, said first well region, and said second well region and having first and second openings on said first and second well regions, respectively; a first conductive region formed in the surface of said first well region positioned at said first opening; and a second conductive region formed in a surface of said second well region positioned at said second opening.

Claim 14

A semiconductor memory device, comprising: a semiconductor substrate having a main surface; a first well region of a second conductivity type formed in a predetermined region of the main surface of said semiconductor substrate; a second well region of a first conductivity type formed in the main surface of the semiconductor substrate within said first well region; an element isolation film formed on the main surface of said semiconductor substrate, said first well region, and said second well region and having first and second openings on said first and second well regions, respectively; a first conductive region formed in the surface of said first well region positioned at said first opening; and a second conductive region formed in a surface of said second well region positioned at said second opening.

Claim 15

A semiconductor device including an input protecting circuit, wherein said input protecting circuit includes a semiconductor substrate of a first conductivity type having a main surface, a first impurity region of the first conductivity type formed in the main surface of said semiconductor substrate, a first well region of the first conductivity type formed in the main surface of said semiconductor substrate so as to be electrically connected to said first impurity region and to have a depth larger than said first impurity region, and a second well region of a second conductivity type formed in the main surface of said semiconductor substrate so as to cover said first well region.

Claim 16

A semiconductor device including an input protecting circuit, wherein said input protecting circuit includes a semiconductor substrate of a first conductivity type having a main surface, a first impurity region of the first conductivity type formed in the main surface of said semiconductor substrate, a first well region of the first conductivity type formed in the main surface of said semiconductor substrate so as to be electrically connected to said first impurity region and to have a depth larger than said first impurity region, and a second well region of a second conductivity type formed in the main surface of said semiconductor substrate so as to cover said first well region.

Claim 17

The semiconductor memory device according to claim 10, wherein said first well region has an impurity concentration lower than said first impurity region.

Claim 18

The semiconductor memory device according to claim 10, wherein said first well region is formed so as to cover said first impurity region.

Claim 19

The semiconductor memory device according to claim 10, wherein said first well region is formed so as to cover only part of said first impurity region.

Claim 20

The semiconductor memory device according to claim 10, wherein at least any of first and second power supply potentials externally applied to said semiconductor device is applied to said second well region.

Claim 21

The semiconductor memory device according to claim 10, wherein at least any of a potential higher than a higher one of first and second power supply potentials externally applied to said semiconductor device and a potential lower than a lower one of said first and second power supply potentials externally applied to said semiconductor device is applied to said second well region.

Claim 22

The semiconductor memory device according to claim 10, wherein said first impurity region constitutes an input node for a signal generated external to the semiconductor memory device, an input node for power supply external to the semiconductor memory device, or an output node for a signal generated external to the semiconductor memory device.