US5668035A
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Method for fabricating a dual-gate dielectric module for memory with embedded logic technology
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1996-06-10
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Granted: 1997-09-16
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Expires: 2016-06-10
Abstract
Abstract A method for fabricating a dual-gate oxide for memory with embedded logic has been achieved. The method is described for forming a thin gate oxide for the peripheral circuits on a DRAM device, while providing a thicker oxide for the memory cells having a boosted word line architecture. The method avoids applying photoresist directly to the gate oxide, and thereby prevents contamination. A first gate oxide is formed on the device areas on the substrate. A first polysilicon layer is deposited and patterned leaving portions over the memory cell areas. The first gate oxide is removed over the peripheral device areas, and is replaced by a thinner second gate oxide. A second polysilicon layer is deposited and patterned to remain over the peripheral device areas. The first and second polysilicon layers, having essentially equal thicknesses, are coated with an insulating layer. The FET gate electrodes for both the peripheral and memory cell areas are simultaneously patterned from the first and second polysilicon layers to complete the DRAM structure up to and including the gate electrodes.
Inventors
- 👤 Chung Hsin Fang
- 👤 Julie Huang
- 👤 Chen-Jong Wang
- 👤 Mong-Song Liang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:27
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/09
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
300 words
A method for fabricating a dual gate oxide on a semiconductor substrate for field effect transistor gate electrodes comprising the steps of: forming field oxide areas on said semiconductor substrate surrounding and electrically isolating device areas, said device areas comprised of a first device area and a second device area; forming a first gate oxide on said first and second device areas by thermal oxidation; depositing a first polysilicon layer over said first gate oxide layer and elsewhere on said substrate; patterning by photoresist masking and anisotropic plasma etching said first polysilicon layer leaving portions over said first device area and exposing said first gate oxide over said second device area; removing said first gate oxide layer from said second device area using a wet oxide etch; forming a second gate oxide layer by thermal oxidation on said second device area and concurrently forming a silicon oxide layer on said first polysilicon layer; depositing a second polysilicon layer over said second gate oxide layer in said second device area and over said silicon oxide layer on said first polysilicon layer; patterning said second polysilicon layer by photoresist masking and anisotropic plasma etching, leaving portions of said second polysilicon layer over said second device area and removing said second polysilicon layer to said silicon oxide layer on said first polysilicon layer over said first device area; removing said silicon oxide layer on said first polysilicon layer using a wet etch; depositing an insulating layer on said first and second polysilicon layers; patterning by photoresist masking and anisotropic plasma etching said insulating layer and concurrently said first and second polysilicon layers, and thereby completing said field effect transistor gate electrodes having said first gate oxide layer over said first device areas and said second gate oxide layer over said second device areas.
Claim 2
Independent Claim
300 words
A method for fabricating a dual gate oxide on a semiconductor substrate for field effect transistor gate electrodes comprising the steps of: forming field oxide areas on said semiconductor substrate surrounding and electrically isolating device areas, said device areas comprised of a first device area and a second device area; forming a first gate oxide on said first and second device areas by thermal oxidation; depositing a first polysilicon layer over said first gate oxide layer and elsewhere on said substrate; patterning by photoresist masking and anisotropic plasma etching said first polysilicon layer leaving portions over said first device area and exposing said first gate oxide over said second device area; removing said first gate oxide layer from said second device area using a wet oxide etch; forming a second gate oxide layer by thermal oxidation on said second device area and concurrently forming a silicon oxide layer on said first polysilicon layer; depositing a second polysilicon layer over said second gate oxide layer in said second device area and over said silicon oxide layer on said first polysilicon layer; patterning said second polysilicon layer by photoresist masking and anisotropic plasma etching, leaving portions of said second polysilicon layer over said second device area and removing said second polysilicon layer to said silicon oxide layer on said first polysilicon layer over said first device area; removing said silicon oxide layer on said first polysilicon layer using a wet etch; depositing an insulating layer on said first and second polysilicon layers; patterning by photoresist masking and anisotropic plasma etching said insulating layer and concurrently said first and second polysilicon layers, and thereby completing said field effect transistor gate electrodes having said first gate oxide layer over said first device areas and said second gate oxide layer over said second device areas.
Claim 3
Dependent Claim
23 words
The method of claim 1, wherein said first device area is the memory device area for a dynamic random access memory (DRAM) device.
Claim 4
Dependent Claim
23 words
The method of claim 1, wherein said second device area is the logic device area for the peripheral circuits for a DRAM device.
Claim 5
Dependent Claim
20 words
The method of claim 1, wherein said first gate oxide has a thickness of between about 100 and 120 Angstroms.
Claim 6
Dependent Claim
23 words
The method of claim 1, wherein said thickness of said second gate oxide has a thickness of between about 70 and 90 Angstroms.
Claim 7
Dependent Claim
32 words
The method of claim 1, wherein said first polysilicon layer is doped with phosphorus (P) having a dopant concentration of between about 1.0 E 18 and 1.0 E 21 atoms/cm 3 .
Claim 8
Dependent Claim
32 words
The method of claim 1, wherein said second polysilicon layer is doped with phosphorus (P) having a dopant concentration of between about 1.0 E 18 and 1.0 E 21 atoms/cm 3 .
Claim 9
Dependent Claim
22 words
The method of claim 1, wherein said first polysilicon layer is deposited to a thickness of between about 1000 and 3000 Angstroms.
Claim 10
Dependent Claim
22 words
The method of claim 1, wherein said second polysilicon layer is deposited to a thickness of between about 1000 and 3000 Angstroms.
Claim 11
Dependent Claim
33 words
The method of claim 1, wherein said insulating layer deposited on said first and second polysilicon layers is deposited by low pressure chemical vapor deposition (LPCVD) using a reactant gas of tetraethosiloxane (TEOS).
Claim 12
Dependent Claim
20 words
The method of claim 1, wherein said first and second polysilicon layers have on their surfaces a refractory metal silicide.
Claim 13
Independent Claim
299 words
A method for fabricating a dual gate oxide on a semiconductor substrate for field effect transistor gate electrodes on DRAM devices comprising the steps of: forming field oxide areas on said semiconductor substrate surrounding and electrically isolating device areas, said device areas being logic device area and memory cell device area; forming a first gate oxide in said device areas by thermal oxidation; depositing a first polysilicon layer over said first gate oxide layer and elsewhere on said substrate; patterning by photoresist masking and anisotropic plasma etching said first polysilicon layer leaving portions over said memory cell device area and exposing said first gate oxide over said logic device area; removing said first gate oxide layer from said logic device area using a wet oxide etch; forming a second gate oxide layer by thermal oxidation on said logic device area and concurrently forming a silicon oxide layer on said first polysilicon layer; depositing a second polysilicon layer over said second gate oxide layer in said logic device area and over said silicon oxide layer on said first polysilicon layer; patterning said second polysilicon layer by photoresist masking and anisotropic plasma etching, leaving portions of said second polysilicon layer over said logic device area and removing said second polysilicon layer to said silicon oxide layer on said first polysilicon layer over said memory cell device area; removing said silicon oxide layer on said first polysilicon layer using a wet etch; depositing on said first and second polysilicon layers an insulating layer; patterning by photoresist masking and anisotropic plasma etching said insulating layer and concurrently said first and second polysilicon layers, and thereby completing said FET gate electrodes having said first gate oxide layer over said memory cell device area and said second gate oxide layer over said logic device area.
Claim 14
Independent Claim
299 words
A method for fabricating a dual gate oxide on a semiconductor substrate for field effect transistor gate electrodes on DRAM devices comprising the steps of: forming field oxide areas on said semiconductor substrate surrounding and electrically isolating device areas, said device areas being logic device area and memory cell device area; forming a first gate oxide in said device areas by thermal oxidation; depositing a first polysilicon layer over said first gate oxide layer and elsewhere on said substrate; patterning by photoresist masking and anisotropic plasma etching said first polysilicon layer leaving portions over said memory cell device area and exposing said first gate oxide over said logic device area; removing said first gate oxide layer from said logic device area using a wet oxide etch; forming a second gate oxide layer by thermal oxidation on said logic device area and concurrently forming a silicon oxide layer on said first polysilicon layer; depositing a second polysilicon layer over said second gate oxide layer in said logic device area and over said silicon oxide layer on said first polysilicon layer; patterning said second polysilicon layer by photoresist masking and anisotropic plasma etching, leaving portions of said second polysilicon layer over said logic device area and removing said second polysilicon layer to said silicon oxide layer on said first polysilicon layer over said memory cell device area; removing said silicon oxide layer on said first polysilicon layer using a wet etch; depositing on said first and second polysilicon layers an insulating layer; patterning by photoresist masking and anisotropic plasma etching said insulating layer and concurrently said first and second polysilicon layers, and thereby completing said FET gate electrodes having said first gate oxide layer over said memory cell device area and said second gate oxide layer over said logic device area.
Claim 15
Dependent Claim
20 words
The method of claim 12, wherein said first gate oxide has a thickness of between about 100 and 120 Angstroms.
Claim 16
Dependent Claim
23 words
The method of claim 12, wherein said thickness of said second gate oxide has a thickness of between about 70 and 90 Angstroms.
Claim 17
Dependent Claim
32 words
The method of claim 12, wherein said first polysilicon layer is doped with phosphorus (P) having a dopant concentration of between about 1.0 E 18 and 1.0 E 21 atoms/cm 3 .
Claim 18
Dependent Claim
32 words
The method of claim 12, wherein said second polysilicon layer is doped with phosphorus (P) having a dopant concentration of between about 1.0 E 18 and 1.0 E 21 atoms/cm 3 .
Claim 19
Dependent Claim
22 words
The method of claim 12, wherein said first polysilicon layer is deposited to a thickness of between about 1500 and 3000 Angstroms.
Claim 20
Dependent Claim
22 words
The method of claim 12, wherein said second polysilicon layer is deposited to a thickness of between about 1500 and 3000 Angstroms.
Claim 21
Dependent Claim
31 words
The method of claim 12, wherein said insulating layer deposited on said first and second polysilicon layers is deposited by low pressure chemical vapor deposition using a reactant gas of tetraethosiloxane.
Claim 22
Dependent Claim
20 words
The method of claim 12, wherein said first and second polysilicon layers have on their surfaces a refractory metal silicide.
References Cited (Backward Citations)
US5155056A
Cited
US5395784A
Cited
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