US5665652A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing a semiconductor device wherein electrodes on a semiconductor chip are electrically connected to lead terminals by plating bonding
Abstract According to a face-down-mounting semiconductor device wherein electrode pads on a semiconductor chip and lead terminals are electrically connected to each other by plating bonding, and a method of manufacturing the semiconductor device, a guide tool is placed on the surface of a semiconductor chip. The guide tool includes guide holes corresponding in position to electrode pads. Columnar lead terminals are inserted into the guide holes of the guide tool. In this state, the semiconductor chip is soaked in a plating solution, together with the guide tool, to execute plating bonding. Since, therefore, the lead terminals can be brought into reliable contact with the electrode pads, metal plating layers can be grown sufficiently between them, thereby improving in reliability of melting bonding.
A method for manufacturing a semiconductor device, comprising the steps of: positioning insulative members on a surface of a semiconductor chip on which electrodes are formed, said insulative members having guide holes corresponding to the electrodes, and guiding lead terminals into the guide holes, respectively, said lead terminals being separated from one another; and soaking the semiconductor chip in a solution of electrolytic plating together with the insulative members while the electrodes and the lead terminals contact each other to form metal plating layers for electrically connecting the lead terminals and the electrodes.
Claim 2
Independent Claim
93 words
A method for manufacturing a semiconductor device, comprising the steps of: positioning insulative members on a surface of a semiconductor chip on which electrodes are formed, said insulative members having guide holes corresponding to the electrodes, and guiding lead terminals into the guide holes, respectively, said lead terminals being separated from one another; and soaking the semiconductor chip in a solution of electrolytic plating together with the insulative members while the electrodes and the lead terminals contact each other to form metal plating layers for electrically connecting the lead terminals and the electrodes.
Claim 3
Dependent Claim
19 words
The method according to claim 1, wherein each of said lead terminals is a projection comprising a conductive material.
Claim 4
Dependent Claim
19 words
The method according to claim 1, wherein each of said lead terminals is a sphere comprising a conductive material.
Claim 5
Dependent Claim
29 words
The method according to claim 1, further comprising a step of forming a sealing member on at least a surface of said semiconductor chip including the metal plating layers.