US5665631A
Expired / Lapsed
US
⏱️ 0.0 years remaining
SOI substrate manufacturing method
Assignee: Samsung Electronics Co Ltd
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Filing: 1995-11-28
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Granted: 1997-09-09
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Expires: 2015-11-28
Abstract
Abstract A SOI substrate manufacturing method which corrects the warpage in the SOI substrate by varying the thickness of a semiconductor material layer additionally formed over the bonded combination of a semiconductor substrate and supporting substrate.
Inventors
- 👤 Byoung-hun Lee
- 👤 Chi-jung Kang
- 👤 Kyung-wook Lee
- 👤 Gi-ho Cha
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:26
CPC Classifications
H; H10; H10P; H10P10/00; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1922; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S438/00; Y10S438/938
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
94 words
A method of manufacturing a SOI substrate, comprising the steps of: bonding a supporting substrate to a semiconductor substrate; forming an oxidized layer over the exposed surfaces of the bonded supporting substrate and semiconductor substrate; forming a semiconductor material layer of first thickness over the oxidized layer; removing an upper portion of the semiconductor substrate and portions of the oxidized layer and semiconductor material layer covering the removed portion of the semiconductor substrate to produce a modified semiconductor substrate having a substantially planar upper surface, and a modified semiconductor material layer having first thickness.
Claim 2
Independent Claim
94 words
A method of manufacturing a SOI substrate, comprising the steps of: bonding a supporting substrate to a semiconductor substrate; forming an oxidized layer over the exposed surfaces of the bonded supporting substrate and semiconductor substrate; forming a semiconductor material layer of first thickness over the oxidized layer; removing an upper portion of the semiconductor substrate and portions of the oxidized layer and semiconductor material layer covering the removed portion of the semiconductor substrate to produce a modified semiconductor substrate having a substantially planar upper surface, and a modified semiconductor material layer having first thickness.
Claim 3
Dependent Claim
33 words
The method of manufacturing according to claim 1, further comprising the step of: varying the thickness of the modified semiconductor material layer to correct warpage in the upper-surface of the modified semiconductor substrate.
Claim 4
Dependent Claim
35 words
The method of manufacturing according to claim 2, wherein the step of varying the thickness of the modified semiconductor material layer comprises the substep of depositing additional semiconductor material on the modified semiconductor material layer.
Claim 5
Dependent Claim
39 words
The method of manufacturing according to claim 2, wherein the step of varying the thickness of the modified semiconductor material layer comprises the substep of etching away a portion of the first thickness of the modified semiconductor material layer.
Claim 6
Dependent Claim
32 words
The method of manufacturing according to claim 4, wherein the substep of etching away a portion of the first thickness of the modified semiconductor material layer is performed using a wet-etching method.
Claim 7
Dependent Claim
32 words
The method of manufacturing according to claim 4, wherein the substep of etching away a portion of the first thickness of the modified semiconductor material layer is performed using a dry-etching method.
Claim 8
Dependent Claim
33 words
The method of manufacturing according to claim 4, wherein the substep of etching away a portion of the first thickness of the modified semiconductor material layer is performed using a chemical-mechanical polishing method.
Claim 9
Dependent Claim
18 words
The method of manufacturing according to claim 2, wherein the semiconductor substrate is formed from a silicon wafer.
Claim 10
Dependent Claim
15 words
The method of manufacturing according to claim 3, wherein the semiconductor material layer comprises polysilicon.
Claim 11
Dependent Claim
37 words
The method of manufacturing according to claim 2, wherein the step of removing an upper portion of the semiconductor substrate, comprises the substep of grinding away a substantial portion of an initial thickness of the semiconductor substrate.
Claim 12
Dependent Claim
27 words
The method of manufacturing according to claim 10, further comprising the step of chemically and mechanically polishing the substantially planar upper surface of the modified semiconductor substrate.
Claim 13
Dependent Claim
24 words
The method of manufacturing according to claim 2, wherein the oxidized layer is formed of a thermally oxidized layer using a wet oxidization process.
References Cited (Backward Citations)
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Cited
JPH04116816A
Cited
US5238875A
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US5308776A
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JPH06275525A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-09-08 | 2001-03-10 | 2001-09-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-09-08 | 2005-03-10 | 2005-09-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-09-08 | 2009-03-10 | 2009-09-09 | $7700.00 | Window Closed / Lapsed |