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Patent US5663556A successfully refreshed from Google Patents.
US5663556A
Expired / Lapsed
US
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Optoelectronic ferroelectric sensor and signal generating device
Assignee: Northwestern University
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Filing: 1995-06-07
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Granted: 1997-09-02
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Expires: 2015-06-07
Abstract
Abstract An optoelectronic temperature sensor comprises a doped ferroelectric oxide thin film that exhibits a detectable change in luminescence intensity with temperature as a result of an oxide phase transition when the sensor is heated or cooled through a particular temperature range. The phase of the doped ferroelectric oxide affects the intensity of the luminescence emitted by the doped ferroelectric oxide and thereby provides a temperature dependent parameter or output. The optoelectronic temperature sensor of the present invention can comprise a rare earth or transition metal doped ferroelectric oxide thin film.
Inventors
- 👤 Bruce W. Wessels
- 👤 Bruce A. Block
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:16
CPC Classifications
G; G01; G01K; G01K11/00; G01K11/20
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
54 words
Optoelectronic temperature sensor, comprising a doped ferroelectric oxide sensor element that exhibits a detectable change in luminescence intensity with temperature as a result of a phase transition of the doped ferroelectric oxide when the sensor element is heated or cooled through a particular temperature range and means for measuring the change in luminescence intensity.
Claim 2
Dependent Claim
54 words
Optoelectronic temperature sensor, comprising a doped ferroelectric oxide sensor element that exhibits a detectable change in luminescence intensity with temperature as a result of a phase transition of the doped ferroelectric oxide when the sensor element is heated or cooled through a particular temperature range and means for measuring the change in luminescence intensity.
Claim 3
Dependent Claim
31 words
The optoelectronic temperature sensor of claim 1 wherein the ferroelectric oxide sensor element is a thin film doped with a photoluminescent dopant selected from a rare earth metal or transition metal.
Claim 4
Dependent Claim
15 words
The optoelectronic temperature sensor of claim 2 wherein the ferroelectric oxide comprises BaTiO 3 .
Claim 5
Dependent Claim
14 words
The optoelectronic temperature sensor of claim 2 wherein the rare earth metal is Er.
Claim 6
Dependent Claim
57 words
Optoelectronic temperature sensor, comprising an Er doped ferroelectric oxide thin film sensor element that exhibits a detectable change in luminescence intensity with temperature as a result of a phase transition of the doped ferroelectric oxide when the sensor element is heated or cooled through a particular temperature range and means for measuring the change in luminescence intensity.
Claim 7
Dependent Claim
57 words
Optoelectronic temperature sensor, comprising an Er doped ferroelectric oxide thin film sensor element that exhibits a detectable change in luminescence intensity with temperature as a result of a phase transition of the doped ferroelectric oxide when the sensor element is heated or cooled through a particular temperature range and means for measuring the change in luminescence intensity.
Claim 8
Dependent Claim
68 words
Optoelectronic temperature sensitive signal-generating device, comprising a doped ferroelectric oxide temperature sensor element that provides temperature dependent change in luminescence intensity as a result of a phase transition of the doped ferroelectric oxide when the sensor element is heated or cooled through a particular temperature range and a detector for monitoring the change in the intensity of luminescence of said sensor and providing a temperature dependent electrical signal.
Claim 9
Dependent Claim
68 words
Optoelectronic temperature sensitive signal-generating device, comprising a doped ferroelectric oxide temperature sensor element that provides temperature dependent change in luminescence intensity as a result of a phase transition of the doped ferroelectric oxide when the sensor element is heated or cooled through a particular temperature range and a detector for monitoring the change in the intensity of luminescence of said sensor and providing a temperature dependent electrical signal.
Claim 10
Dependent Claim
50 words
The optoelectronic temperature sensitive signal-generating device of claim 6 wherein said temperature sensor element comprises a doped ferroelectric oxide thin film that exhibits a detectable change in luminescence intensity with temperature as a result of a phase transition when the sensor is heated or cooled through a particular temperature range.
Claim 11
Dependent Claim
32 words
The optoelectronic temperature sensitive signal-generating device of claim 7 wherein the ferroelectric oxide thin film sensor element is doped with a photoluminescent dopant selected from a rare earth metal or transition metal.
Claim 12
Dependent Claim
17 words
The optoelectronic temperature sensitive signal-generating device of claim 8 wherein the ferroelectric oxide is doped with Er.
Claim 13
Dependent Claim
15 words
The optoelectronic temperature sensitive signal-generating device of claim 6 wherein the detector is a photodetector.
Claim 14
Dependent Claim
24 words
The optoelectronic temperature sensitive signal-generating device of claim 6 further including an electrical component actuated in response to said electrical signal of said detector.
Claim 15
Dependent Claim
15 words
The optoelectronic temperature sensitive signal-generating device of claim 11 wherein the component is a switch.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-09-01 | 2001-03-03 | 2001-09-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-09-01 | 2005-03-03 | 2005-09-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-09-01 | 2009-03-03 | 2009-09-02 | $7700.00 | Window Closed / Lapsed |