US5663103A
Expired / Lapsed
US
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Method of manufacturing an insulated-gate field-effect transistor in a semiconductor device in which source/drain electrodes are defined by formation of silicide on a gate electrode and a field-effect transistor
Assignee: United Microelectronics Corp
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Filing: 1996-08-02
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Granted: 1997-09-02
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Expires: 2016-08-02
Abstract
Abstract For manufacturing an insulated-gate field-effect transistor in a semiconductor device, a refractory metal film is formed over a semiconductor substrate with an insulating film being interposed therebetween. An insulated gate electrode is formed by patterning the refractory metal film and insulating film. After formation of source/drain regions in a surface portion of the substrate, using the insulated gate electrode as a mask, a poly-silicon film is formed extending to cover the surface portion of the substrate and the patterned refractory metal film of the gate electrode. The resulting structure is heated to convert at least that portion of the poly-silicon film which lies on the patterned refractory metal film to a silicide film portion. The thus formed silicide film portion is removed so that portions of the doped poly-silicon film are left on the source/drain regions in the surface portion of semiconductor substrate. These left portions of the doped poly-silicon film serve as source/drain electrodes.
Inventors
- 👤 Shoichi Iwasa
- 👤 Takeshi Naganuma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:19
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/259; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
172 words
A method of manufacturing an insulated-gate field-effect transistor in a semiconductor device, comprising the steps of: preparing a semiconductor substrate; forming an insulating film on said semiconductor substrate; forming a refractory metal film over said semiconductor substrate, said insulating film being sandwiched between said refractory metal film and said semiconductor substrate; patterning said refractory metal film and said insulating film to provide a gate electrode comprising said refractory metal film insulated from said semiconductor substrate by the patterned insulating film; doping said semiconductor substrate with an impurity, using as a mask said gate electrode and said patterned insulating film, thereby forming doped regions in a surface portion of said semiconductor substrate adjacent said insulated gate electrode; forming a poly-silicon film on said surface portion of said semiconductor substrate and on an upper surface of said patterned refractory metal film; heating the resulting structure to convert at least that portion of said poly-silicon film which lies on said patterned refractory metal film to a silicide film portion; and removing said silicide film portion.
Claim 2
Independent Claim
172 words
A method of manufacturing an insulated-gate field-effect transistor in a semiconductor device, comprising the steps of: preparing a semiconductor substrate; forming an insulating film on said semiconductor substrate; forming a refractory metal film over said semiconductor substrate, said insulating film being sandwiched between said refractory metal film and said semiconductor substrate; patterning said refractory metal film and said insulating film to provide a gate electrode comprising said refractory metal film insulated from said semiconductor substrate by the patterned insulating film; doping said semiconductor substrate with an impurity, using as a mask said gate electrode and said patterned insulating film, thereby forming doped regions in a surface portion of said semiconductor substrate adjacent said insulated gate electrode; forming a poly-silicon film on said surface portion of said semiconductor substrate and on an upper surface of said patterned refractory metal film; heating the resulting structure to convert at least that portion of said poly-silicon film which lies on said patterned refractory metal film to a silicide film portion; and removing said silicide film portion.
Claim 3
Dependent Claim
61 words
A method according to claim 1, further comprising the step of forming a conductive film on said insulating film, said refractory metal film being formed on said conductive film so that said conductive film is patterned along with said refractory metal film and said insulating film and said gate electrode includes said patterned refractory metal film and said patterned conductive film.
Claim 4
Dependent Claim
170 words
A method according to claim 2, wherein: before said poly-silicon film formation step is carried out, a side wall insulating film is formed for covering each of the side surfaces of said patterned refractory metal and conductive metal films and of said patterned insulating film, and said semiconductor substrate is further doped with another impurity, using as a mask said patterned refractory metal and conductive metal films, said patterned insulating film and said side wall insulating films, thereby forming double-doped regions in said doped regions in a self-aligned manner; said poly-silicon film is formed on surfaces of said side wall insulating films as well as on said surface portion of said semiconductor substrate and the upper surface of said patterned refractory metal film; and those portions of said poly-silicon film which lie on parts of an upper surface of said side wall insulating film are also converted to silicide by said heating step, said those portions of the poly-silicon film converted to silicide being also removed by said removing step.
Claim 5
Dependent Claim
18 words
A method according to claim 1, wherein said silicide film portion removing step is carried out by wet-etching.
References Cited (Backward Citations)
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