US5518960A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a wiring layer including amorphous silicon and refractory metal silicide
Assignee: Renesas Electronics Corp
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Filing: 1994-09-28
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Granted: 1996-05-21
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Expires: 2014-09-28
Abstract
Abstract According to a semiconductor device and a manufacturing method thereof of the invention, silicon electrodes are connected to silicon layers in a wiring layer including silicon layers and refractory metal silicide layers formed on silicon layers and an amorphous silicon layer formed on the refractory silicide layer. Thus, good contact between the silicon electrodes and the wiring layer can be provided without the influence of a native oxide film formed on the surface of the refractory metal silicide layers. As a result, a semiconductor device and a manufacturing method thereof implementing reduced contact resistance to a wiring layer including a refractory metal silicide film can be provided.
Inventors
- 👤 Junichi Tsuchimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:07
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
119 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a silicon layer; forming a refractory metal silicide layer on said silicon layer; forming an insulating film on said refractory metal silicide layer; forming a contact hole reaching the refractory metal silicide layer in said insulating film by a photolithography technique; heat-treating a surface of the refractory metal silicide layer exposed in said contact hole in a hydrogen atmosphere at a temperature in the range from 750° C. to 820° C. in a furnace; and in the furnace used for said heat-treatment, depositing amorphous silicon in said contact hole and performing a heat treatment, thereby forming a silicon electrode electrically connected to said refractory metal silicide layer.
Claim 2
Independent Claim
119 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a silicon layer; forming a refractory metal silicide layer on said silicon layer; forming an insulating film on said refractory metal silicide layer; forming a contact hole reaching the refractory metal silicide layer in said insulating film by a photolithography technique; heat-treating a surface of the refractory metal silicide layer exposed in said contact hole in a hydrogen atmosphere at a temperature in the range from 750° C. to 820° C. in a furnace; and in the furnace used for said heat-treatment, depositing amorphous silicon in said contact hole and performing a heat treatment, thereby forming a silicon electrode electrically connected to said refractory metal silicide layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-05-21 | 1999-11-20 | 2000-05-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-05-21 | 2003-11-20 | 2004-05-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-05-21 | 2007-11-20 | 2008-05-21 | $7700.00 | Window Closed / Lapsed |