Abstract A method for processing a layer of a silicon-based material on a wafer by which a sidewall protective film may be removed sufficiently and efficiently. An etching gas capable of yielding chlorine- or bromine-based chemical species and oxygen-based chemical species is used for dry etching a polycide film formed on a gate insulating film, plasma processing with an oxygen-based gas is then carried out for ashing the resist mask and removing carbonaceous components in the sidewall protective film. In addition, the sidewall protective film is oxidized so that the composition to that of stoichiometrically stable SiO 2 is approached. Subsequently, the modified sidewall protective film is removed by processing with a dilute hydrofluoric acid solution. Since this sufficiently removes the sidewall protective film, it becomes possible to reduce the amount of dust and to improve coverage of a film to be formed by the next step. In this manner, a semiconductor device may be prepared with improved reliability and production yield.
A method for processing a layer of a silicon-based material on a wafer comprising the steps of: dry-etching the layer of the silicon-based material using an organic resist pattern as a mask to remove silicon-based material which is not masked by the resist and to form a sidewall protective film including a non-stoichiometric SiO x material, wherein the dry-etching is carried out using an etching gas capable of generating oxygen-based chemical species and non-fluorine halogen based chemical species; plasma processing the dry-etched wafer using an oxygen-based gas to remove the organic resist pattern and to form a modified sidewall protective film having a composition which is substantially a stoichiometric SiO 2 film; and removing the modified sidewall protective film with a dilute hydrofluoric acid solution.
Claim 2
Independent Claim
125 words
A method for processing a layer of a silicon-based material on a wafer comprising the steps of: dry-etching the layer of the silicon-based material using an organic resist pattern as a mask to remove silicon-based material which is not masked by the resist and to form a sidewall protective film including a non-stoichiometric SiO x material, wherein the dry-etching is carried out using an etching gas capable of generating oxygen-based chemical species and non-fluorine halogen based chemical species; plasma processing the dry-etched wafer using an oxygen-based gas to remove the organic resist pattern and to form a modified sidewall protective film having a composition which is substantially a stoichiometric SiO 2 film; and removing the modified sidewall protective film with a dilute hydrofluoric acid solution.
Claim 3
Dependent Claim
13 words
A method as defined in claim 1, wherein the silicon-based material is polysilicon.
Claim 4
Dependent Claim
13 words
A method as defined in claim 1, wherein the silicon-based material is polycide.