US5658826A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating semiconductor device
Assignee: SK Hynix Inc
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Filing: 1996-08-06
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Granted: 1997-08-19
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Expires: 2016-08-06
Abstract
Abstract Method for fabricating a semiconductor device is disclosed, including the steps of: forming a first resist layer on a substrate; patterning a predetermined region of the first resist layer to form a pattern having a first width which exposes the substrate; forming an insulating film on an entire surface of the substrate including the first resist layer; forming a second resist layer on the insulating film; patterning a predetermined region of the second resist layer to form a pattern over the pattern of the first resist layer having a second width which exposes the insulating film; using the second resist layer as a mask in etching the exposed insulating film to form sidewall spacers at sides of the pattern of the first resist layer; forming a metal layer on an entire resultant surface including the second photoresist layer; and, removing the first and second resist layers and the insulating film to form a T form gate electrode.
Inventors
- 👤 Ki Woong Chung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:48
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D64/00; H10D64/01; H10D64/011; H10D64/012; H10D64/0124; H10D64/0125; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/95
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
156 words
A method for fabricating a semiconductor device comprising the steps of: forming a first resist layer on a substrate; patterning a predetermined region of the first resist layer to form a pattern having a first width which exposes the substrate; forming an insulating film on an entire surface of the substrate including the first resist layer; forming a second resist layer on the insulating film; patterning a predetermined region of the second resist layer to form a pattern over the pattern of the first resist layer having a second width which exposes the insulating film; using the second resist layer as a mask in etching the exposed insulating film to form sidewall spacers at sides of the pattern of the first resist layer; forming a metal layer on an entire resultant surface including the second photoresist layer; and, removing the first and second resist layers and the insulating film to form a T form gate electrode.
Claim 2
Independent Claim
156 words
A method for fabricating a semiconductor device comprising the steps of: forming a first resist layer on a substrate; patterning a predetermined region of the first resist layer to form a pattern having a first width which exposes the substrate; forming an insulating film on an entire surface of the substrate including the first resist layer; forming a second resist layer on the insulating film; patterning a predetermined region of the second resist layer to form a pattern over the pattern of the first resist layer having a second width which exposes the insulating film; using the second resist layer as a mask in etching the exposed insulating film to form sidewall spacers at sides of the pattern of the first resist layer; forming a metal layer on an entire resultant surface including the second photoresist layer; and, removing the first and second resist layers and the insulating film to form a T form gate electrode.
Claim 3
Dependent Claim
16 words
A method as claimed in claim 1, wherein the first resist layer is formed of PMMA.
Claim 4
Dependent Claim
20 words
A method as claimed in claim 1, wherein the first resist layer is formed to a thickness of 500˜2000 Å.
Claim 5
Dependent Claim
19 words
A method as claimed in claim 1, wherein an electron beam is used in patterning the first resist layer.
Claim 6
Dependent Claim
23 words
A method as claimed in claim 1, wherein a pattern width of the first resist is formed to be at least 0.1˜0.3 μm.
Claim 7
Dependent Claim
19 words
A method as claimed in claim 1, wherein the insulating film is formed to a thickness of 200˜800 Å.
Claim 8
Dependent Claim
19 words
A method as claimed in claim 1, wherein the insulating film is formed of Si 3 N 4 .
Claim 9
Dependent Claim
20 words
A method as claimed in claim 1, wherein the second resist layer is formed to a thickness of 0.5˜2 μm.
Claim 10
Dependent Claim
19 words
A method as claimed in claim 1, wherein an ultra-violet ray is used in patterning the second resist layer.
Claim 11
Dependent Claim
23 words
A method as claimed in claim 1, wherein the second resist is formed to have a pattern width of about 1 μm˜2 μm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-18 | 2001-02-17 | 2001-08-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-18 | 2005-02-17 | 2005-08-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-18 | 2009-02-17 | 2009-08-19 | $7700.00 | Window Closed / Lapsed |