US5657266A
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Single ended transfer circuit
Assignee: Micron Technology Inc
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Filing: 1995-06-30
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Granted: 1997-08-12
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Expires: 2015-06-30
Abstract
Abstract A transfer circuit and method are described for transferring data between a static memory and a dynamic memory. The static memory is a Serial Access Memory, SAM, and the dynamic memory is a Dynamic Random Access Memory, DRAM. The transfer circuit includes a single transfer line selectively coupled to both memories. The static memory and the single transfer line can be pre-charged, or equilibrated to a predetermined voltage level. Transfers of data are performed by coupling a memory cell to the single transfer line so that the transfer line voltage is changed from the predetermined voltage level and then coupled to another memory cell.
Inventors
- 👤 Loren L. McLaury
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 09:31
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/413; G11C11/417; G11C11/419; G11C11/401; G11C11/4063; G11C11/407; G11C11/409; G11C11/4096; G11C7/00; G11C7/10; G11C7/1015; G11C7/103; G11C7/1048
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
179 words
An integrated memory circuit comprising: a dynamic memory array having a plurality dynamic memory cells; a static memory having a plurality of static memory cells; a plurality of single transfer lines coupled to the static memory and the dynamic memory, each for transferring data between one of the plurality of dynamic memory cells and one of the static memory cells; a pre-charge circuit connected to the plurality of single transfer lines for charging the plurality of single transfer lines to a pre-determined voltage level; pass circuitry electronically located between the static memory and the plurality of single transfer lines for selectively coupling the plurality of static memory cells to the plurality of single transfer lines; memory cell pass circuit electrically located between the plurality of dynamic memory cells and the plurality of single transfer lines, for selectively coupling one of the plurality of dynamic memory cells to one of the plurality of single transfer lines; and equilibration circuitry connected to the plurality of static memory cells for equilibrating the plurality of static memory cells to a predetermined voltage level.
Claim 2
Dependent Claim
179 words
An integrated memory circuit comprising: a dynamic memory array having a plurality dynamic memory cells; a static memory having a plurality of static memory cells; a plurality of single transfer lines coupled to the static memory and the dynamic memory, each for transferring data between one of the plurality of dynamic memory cells and one of the static memory cells; a pre-charge circuit connected to the plurality of single transfer lines for charging the plurality of single transfer lines to a pre-determined voltage level; pass circuitry electronically located between the static memory and the plurality of single transfer lines for selectively coupling the plurality of static memory cells to the plurality of single transfer lines; memory cell pass circuit electrically located between the plurality of dynamic memory cells and the plurality of single transfer lines, for selectively coupling one of the plurality of dynamic memory cells to one of the plurality of single transfer lines; and equilibration circuitry connected to the plurality of static memory cells for equilibrating the plurality of static memory cells to a predetermined voltage level.
Claim 3
Dependent Claim
35 words
The integrated memory circuit of claim 1 where: each of the plurality of static memory cells comprise first and second nodes; and the equilibrate circuit comprises a transistor connected between the first and second nodes.
Claim 4
Dependent Claim
43 words
The integrated memory circuit of claim 1 wherein the pre-charge circuit comprises: a charging transistor having a drain connected to the plurality of single transfer lines, a source connected to the pre-determined voltage level, and a gate connected to receive an activation signal.
Claim 5
Dependent Claim
108 words
An integrated memory circuit comprising: a dynamic memory array having a plurality dynamic memory cells; a static memory having a plurality of static memory cells; a plurality of single transfer lines coupled to the static memory and the dynamic memory, each for transferring data between one of the plurality of dynamic memory cells and one of the static memory cells; a pre-charge circuit connected to the plurality of single transfer lines for charging the plurality of single transfer lines to a pre-determined voltage level; and equilibration circuitry connected to the plurality of static memory cells for equilibrating the plurality of static memory cells to a predetermined voltage level.
Claim 6
Dependent Claim
108 words
An integrated memory circuit comprising: a dynamic memory array having a plurality dynamic memory cells; a static memory having a plurality of static memory cells; a plurality of single transfer lines coupled to the static memory and the dynamic memory, each for transferring data between one of the plurality of dynamic memory cells and one of the static memory cells; a pre-charge circuit connected to the plurality of single transfer lines for charging the plurality of single transfer lines to a pre-determined voltage level; and equilibration circuitry connected to the plurality of static memory cells for equilibrating the plurality of static memory cells to a predetermined voltage level.
Claim 7
Dependent Claim
70 words
The integrated memory circuit of claim 4 where the dynamic memory array is arranged in a plurality of columns having a plurality of dynamic memory cells and the plurality of single transfer lines are selectively coupled to two columns of the dynamic memory array, for selectively transferring data between one of the plurality of dynamic memory cells of one of the two columns and one of the static memory cells.
Claim 8
Dependent Claim
43 words
The integrated memory circuit of claim 4 wherein the pre-charge circuit comprises: a charging transistor having a drain connected to the plurality of single transfer lines, a source connected to the pre-determined voltage level, and a gate connected to receive an activation signal.
Claim 9
Dependent Claim
40 words
The integrated memory circuit of claim 4 further including pass circuitry electronically located between the static memory and the plurality of single transfer lines for selectively coupling the plurality of static memory cells to the plurality of single transfer lines.
Claim 10
Dependent Claim
49 words
The integrated memory circuit of claim 4 further including memory cell pass circuit electrically located between the plurality of dynamic memory cells and the plurality of single transfer lines, for selectively coupling one of the plurality of dynamic memory cells to one of the plurality of single transfer lines.
Claim 11
Dependent Claim
35 words
The integrated memory circuit of claim 4 where: each of the plurality of static memory cells comprise first and second nodes; and the equilibrate circuit comprises a transistor connected between the first and second nodes.
Claim 12
Dependent Claim
24 words
The integrated memory circuit of claim 9 further including a bias circuit for electrically coupling the first and second nodes to a predetermined potential.
Claim 13
Independent Claim
95 words
A method of reading data from a dynamic memory array having a plurality of dynamic memory cells with a static memory having a plurality of static memory cells, the method comprising the steps of: equilibrating the plurality of static memory cells to a predetermined voltage level; pre-charging a single transfer line to the predetermined voltage level; coupling one of the plurality of dynamic memory cells to a sense amplifier; selectively coupling the sense amplifier to the single transfer line; and selectively coupling one of the plurality of static memory cells to the single transfer line.
Claim 14
Independent Claim
95 words
A method of reading data from a dynamic memory array having a plurality of dynamic memory cells with a static memory having a plurality of static memory cells, the method comprising the steps of: equilibrating the plurality of static memory cells to a predetermined voltage level; pre-charging a single transfer line to the predetermined voltage level; coupling one of the plurality of dynamic memory cells to a sense amplifier; selectively coupling the sense amplifier to the single transfer line; and selectively coupling one of the plurality of static memory cells to the single transfer line.
Claim 15
Dependent Claim
53 words
The method of claim 9 further including the steps of: transferring a voltage to the one of the plurality of static memory cells; electrically isolating the one of the plurality of static memory cells from the single transfer line; and latching the voltage with the one of the plurality of static memory cells.
Claim 16
Dependent Claim
17 words
The method of claim 11 wherein the predetermined voltage level is one-half of a supply voltage (Vcc).
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-11 | 2001-02-10 | 2001-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-11 | 2005-02-10 | 2005-08-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-11 | 2009-02-10 | 2009-08-12 | $7700.00 | Window Closed / Lapsed |