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US5656858A
Expired / Lapsed
US
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Semiconductor device with bump structure
Assignee: Denso Corp
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Filing: 1995-10-18
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Granted: 1997-08-12
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Expires: 2015-10-18
Abstract
Abstract A semiconductor device, which has a high adhesiveness to the Cu film and the barrier metal at the bump part or LSI wiring part of a flip chip, is disclosed. On a silicon substrate are formed a transistor as a functional element and a bump for making contact with the transistor and an external substrate. On the surface of the silicon substrate is formed a metallic film, and on the metallic film is formed an insulating film, and a part of the metallic film is exposed through a contact hole. On the metallic film within the contact hole is formed a barrier metal made of TiN, and on the barrier metal is formed a bonding layer made of Ti. On the bonding layer is formed a bump growing Cu film, and on the bump growing Cu film is formed a bump structure.
Inventors
- 👤 Ichiharu Kondo
- 👤 Chikage Noritake
- 👤 Yusuke Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 18:21
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/90; H10W72/01; H10W72/012; H10W72/019; H10W72/01231; H10W72/01233; H10W72/01235; H10W72/01251; H10W72/01255; H10W72/01257; H10W72/01951; H10W72/01953; H10W72/20; H10W72/221; H10W72/222; H10W72/231; H10W72/234; H10W72/251; H10W72/252; H10W72/29; H10W72/921; H10W72/923; H10W72/931; H10W72/934; H10W72/941; H10W72/9415; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
62 words
A semiconductor device comprising: a substrate; a copper (Cu) film used for an electrode material or a wiring material; a TiN barrier metal disposed between said substrate and said Cu film; and a bonding layer made of titanium (Ti) disposed between said Cu film and said barrier metal, a film thickness of said bonding layer being between 2 nm and 100 nm.
Claim 2
Dependent Claim
62 words
A semiconductor device comprising: a substrate; a copper (Cu) film used for an electrode material or a wiring material; a TiN barrier metal disposed between said substrate and said Cu film; and a bonding layer made of titanium (Ti) disposed between said Cu film and said barrier metal, a film thickness of said bonding layer being between 2 nm and 100 nm.
Claim 3
Dependent Claim
92 words
A semiconductor device comprising: a semiconductor element provided on a semiconductor chip; a metallic film formed on a surface of said semiconductor chip; an insulating film formed on said metallic film and having a contact hole for exposing a part of said metallic film; a barrier metal formed on the metallic film within said contact hole; a bonding layer made of titanium (Ti) formed on said barrier metal; a bump growing film made of copper (Cu) formed on said bonding layer; and a columnar metallic bump formed on said bump growing film.
Claim 4
Dependent Claim
92 words
A semiconductor device comprising: a semiconductor element provided on a semiconductor chip; a metallic film formed on a surface of said semiconductor chip; an insulating film formed on said metallic film and having a contact hole for exposing a part of said metallic film; a barrier metal formed on the metallic film within said contact hole; a bonding layer made of titanium (Ti) formed on said barrier metal; a bump growing film made of copper (Cu) formed on said bonding layer; and a columnar metallic bump formed on said bump growing film.
Claim 5
Dependent Claim
24 words
A semiconductor device according to claim 2, wherein a diameter of a root part of said columnar metallic bump is 30 μm or more.
Claim 6
Dependent Claim
23 words
A semiconductor device according to claim 2, wherein a diameter of said barrier metal is larger than a diameter of said bonding layer.
Claim 7
Dependent Claim
28 words
A semiconductor device according to claim 4, wherein said diameter of said bonding layer is equal to a diameter of a root part of said columnar metallic bump.
Claim 8
Dependent Claim
108 words
A semiconductor device comprising: a semiconductor element provided on a semiconductor chip; a metallic film formed on said semiconductor element; a metallic bump structure for making contact with said semiconductor element and a wiring provided on an external substrate, provided on a part of said metallic film; and interposed layers interposed between said metallic film and said bump structure, including: a barrier metal layer formed on said metallic film; a bonding layer made of Ti and formed on said barrier metal layer; and a bump growing layer made of Cu and formed on said bonding layer, wherein said metallic bump structure is formed on said bump growing layer.
Claim 9
Dependent Claim
108 words
A semiconductor device comprising: a semiconductor element provided on a semiconductor chip; a metallic film formed on said semiconductor element; a metallic bump structure for making contact with said semiconductor element and a wiring provided on an external substrate, provided on a part of said metallic film; and interposed layers interposed between said metallic film and said bump structure, including: a barrier metal layer formed on said metallic film; a bonding layer made of Ti and formed on said barrier metal layer; and a bump growing layer made of Cu and formed on said bonding layer, wherein said metallic bump structure is formed on said bump growing layer.
Claim 10
Dependent Claim
28 words
A semiconductor device according to claim 6, wherein said barrier metal layer is of a material selected from the group consisting of TiN, W, TiW, W-N and TiW-N.
Claim 11
Dependent Claim
17 words
A semiconductor device according to claim 6, wherein said bonding layer is substantially made of only Ti.
Claim 12
Dependent Claim
22 words
A semiconductor device according to claim 6, wherein a film thickness of said bonding layer is between 2 nm and 100 nm.
Claim 13
Dependent Claim
51 words
A semiconductor device according to claim 6, further comprising an insulating film formed on said metallic film, said insulating film including a contact hole at a portion corresponding to a part of said metallic film, wherein said interposed layers contacts said metallic film through said contact hole of said insulating film.
Claim 14
Dependent Claim
32 words
A semiconductor device according to claim 10, wherein said diameter of a root part of said metallic bump structure is larger than a diameter of said contact hole of said insulating film.
Claim 15
Dependent Claim
24 words
A semiconductor device according to claim 11, wherein said diameter of said root part of said metallic bump structure is 30 μm or more.
Claim 16
Dependent Claim
29 words
A semiconductor device according to claim 11, wherein a diameter of said bonding layer is substantially equal to said diameter of said root part of said metallic bump structure.
Claim 17
Dependent Claim
24 words
A semiconductor device according to claim 13, wherein a diameter of said barrier metal layer is larger than said diameter of said bonding layer.
Claim 18
Dependent Claim
19 words
A semiconductor device according to claim 14, wherein said barrier metal layer is of a compound metal including Ti.
Claim 19
Dependent Claim
24 words
A semiconductor device according to claim 15, wherein said compound metal making up said barrier metal layer has resistant to an embrittlement by hydrogen.
Claim 20
Dependent Claim
22 words
A semiconductor device according to claim 16, wherein a film thickness of said bonding layer is between 2 nm and 100 nm.
Claim 21
Dependent Claim
22 words
A semiconductor device according to claim 17, wherein said film thickness of said bonding layer is between 5 nm and 80 nm.
References Cited (Backward Citations)
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