US5656849A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Two-level spiral inductor structure having a high inductance to area ratio
Assignee: GlobalFoundries Inc
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Filing: 1996-01-31
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Granted: 1997-08-12
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Expires: 2016-01-31
Abstract
Abstract A high-Q monolithic inductor structure formed using conventional silicon technology and having a first complete lower inductor spiral formed on a substrate and a second complete upper formed on a insulating layer over the first inductor spiral. Central portions of the inductor spirals are connected through a via hole in the insulating layer. The inductor spirals are oriented such that the current flows in the first and second spirals are in the same direction.
Inventors
- 👤 Joachim Norbert Burghartz
- 👤 Keith Aelwyn Jenkins
- 👤 Saila Ponnapalli
- 👤 Mehmet Soyuer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 16:50
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/497
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
120 words
A high-Q monolithic inductor structure for microwave applications fabricated using conventional silicon integrated circuit technology, comprising: a first inductor spiral formed on a substrate; an insulating layer formed over the first inductor spiral; a second inductor spiral formed on the insulating layer over said first inductor spiral and positioned to achieve a parasitic capacitance between the first and second inductor spirals that produces a self-resonance frequency of the inductor within a useful microwave frequency range; and a central terminal portion of the first inductor spiral being connected to a central terminal portion of the second inductor spiral through a via hole in the insulating layer, whereby current flows in the first and second inductor spirals are in the same direction.
Claim 2
Dependent Claim
120 words
A high-Q monolithic inductor structure for microwave applications fabricated using conventional silicon integrated circuit technology, comprising: a first inductor spiral formed on a substrate; an insulating layer formed over the first inductor spiral; a second inductor spiral formed on the insulating layer over said first inductor spiral and positioned to achieve a parasitic capacitance between the first and second inductor spirals that produces a self-resonance frequency of the inductor within a useful microwave frequency range; and a central terminal portion of the first inductor spiral being connected to a central terminal portion of the second inductor spiral through a via hole in the insulating layer, whereby current flows in the first and second inductor spirals are in the same direction.
Claim 3
Dependent Claim
13 words
A structure as in claim 1, wherein the insulating layer is silicon dioxide.
Claim 4
Dependent Claim
27 words
A structure as in claim 2, wherein said inductor structure has a Q value of about seven or more at a 900 MHz to 1.8 GHz band.
Claim 5
Dependent Claim
20 words
A structure as in claim 3, wherein the second inductor spiral is oriented to substantially overlap said first inductor spiral.
Claim 6
Dependent Claim
21 words
A structure as in claim 3, wherein the second inductor spiral is oriented to be non-overlapped with said first inductor spiral.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-11 | 2001-02-10 | 2001-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-11 | 2005-02-10 | 2005-08-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-11 | 2009-02-10 | 2009-08-12 | $7700.00 | Window Closed / Lapsed |