Patent US5656537A successfully refreshed from Google Patents.
US5656537A
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Method of manufacturing a semiconductor device having SOI structure
Assignee: Mitsubishi Electric Corp
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Filing: 1995-06-05
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Granted: 1997-08-12
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Expires: 2015-06-05
Abstract
Abstract A buried oxide film and an SOI layer are formed on the main surface of a substrate. A nitride film patterned in predetermined configuration is formed on the surface of the SOI layer. The first selective oxidation treatment is applied to the SOI layer with the nitride film used as a mask. At this stage, the isolating oxide film is formed not to reach the buried oxide film. Anisotropic etching is applied to the isolating oxide film with the nitride film used as a mask. A sidewall insulating layer of oxidation-resistant material is formed on the sidewall of the nitride film. With the sidewall insulating layer and nitride film used as masks, the second selective oxidation treatment is applied to the SOI layer, thereby forming an isolating oxide film. Thereby, it becomes possible to prevent a parasitic MOS transistor being formed in the end of the SOI layer.
Inventors
- 👤 Toshiaki Iwamatsu
- 👤 Yasuo Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 14:25
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0323; H10D30/60; H10D30/67; H10D30/6704; H10D30/6706; H10D30/6713; H10P; H10P14/00; H10P14/60; H10P14/61; H10P36/00; H10P36/03; H10P36/07; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10W10/011; H10W10/012; H10W10/13
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
191 words
A method of manufacturing a semiconductor device having an SOI structure comprising the steps of; forming a semiconductor layer on a main surface of a substrate with an insulating layer interposed, forming on said semiconductor layer an oxidation-resistant film which is patterned, applying a first selective oxidation treatment to said semiconductor layer using said oxidation-resistant film as a mask to form a first isolating oxide film having a bottom surface in said semiconductor layer, applying anisotropic etching to said first isolating oxide film using said oxidation-resistant film as a mask to expose selectively the surface of said semiconductor layer and to leave a part of said first isolating oxide film under the lateral end of said oxidation-resistant film, forming a sidewall insulating layer of oxidation-resistant material over the sidewall of said oxidation-resistant film to cover said first isolating oxide film being left under said oxidation-resistant film, and applying a second selective oxidation treatment to the exposed surface of said semiconductor layer using said oxidation-resistant film and said sidewall insulating layer as masks to form a second isolating oxide film integrated with said first isolating oxide film and reaching said insulating layer.
Claim 2
Independent Claim
191 words
A method of manufacturing a semiconductor device having an SOI structure comprising the steps of; forming a semiconductor layer on a main surface of a substrate with an insulating layer interposed, forming on said semiconductor layer an oxidation-resistant film which is patterned, applying a first selective oxidation treatment to said semiconductor layer using said oxidation-resistant film as a mask to form a first isolating oxide film having a bottom surface in said semiconductor layer, applying anisotropic etching to said first isolating oxide film using said oxidation-resistant film as a mask to expose selectively the surface of said semiconductor layer and to leave a part of said first isolating oxide film under the lateral end of said oxidation-resistant film, forming a sidewall insulating layer of oxidation-resistant material over the sidewall of said oxidation-resistant film to cover said first isolating oxide film being left under said oxidation-resistant film, and applying a second selective oxidation treatment to the exposed surface of said semiconductor layer using said oxidation-resistant film and said sidewall insulating layer as masks to form a second isolating oxide film integrated with said first isolating oxide film and reaching said insulating layer.
Claim 3
Dependent Claim
85 words
A method of manufacturing a semiconductor device having an SOI structure according to claim 1, wherein the step of applying said first selective oxidation treatment includes the step of converting the upper half of said semiconductor layer into said first isolating oxide film, and the step of applying said second selective oxidation treatment includes the step of oxidizing the bottom of said semiconductor layer adjacent to said second isolating oxide film subsequent to the formation of said second isolating oxide film reaching said insulating layer.
Claim 4
Dependent Claim
34 words
A method of manufacturing a semiconductor device having an SOI structure according to claim 2, wherein the period of said second selective oxidation treatment is longer than that of said first selective oxidation treatment.
Claim 5
Dependent Claim
58 words
A method of manufacturing a semiconductor device having an SOI structure according to claim 1, wherein the step of forming said sidewall insulating layer includes the step of forming an oxide film to cover said oxidation-resistant film and the exposed surface of said semiconductor layer, and the step of forming a sidewall insulating layer on said oxide film.
Claim 6
Dependent Claim
60 words
A method of manufacturing a semiconductor device having an SOI structure according to claim 1, wherein the step of forming a sidewall insulating layer includes the step of forming a polycrystalline silicon layer to cover said oxidation-resistant film and the exposed surface of the semiconductor layer, and the step of forming said sidewall insulating layer on said polycrystalline silicon layer.
Claim 7
Dependent Claim
92 words
A method of manufacturing a semiconductor device having an SOI structure according to claim 5, wherein the step of forming said oxidation-resistant film further includes the step of forming a high concentration impurity region for element isolation in said semiconductor layer by selectively implanting an impurity into said semiconductor layer using said oxidation-resistant film as a mask, the step of forming a polycrystalline silicon layer further includes the step of implanting an impurity having the same conductivity type as that contained in said high concentration impurity region into said polycrystalline silicon layer.
Claim 8
Dependent Claim
73 words
A method of manufacturing a semiconductor device having an SOI structure according to claim 5, wherein the step of forming said polycrystalline silicon layer includes the step of forming said polycrystalline silicon layer in such a manner that the thickness of said polycrystalline silicon layer formed on the side surface of said oxidation-resistant layer is less than the thickness of said polycrystalline silicon layer formed on the upper surface of said oxidation-resistant film.
Claim 9
Dependent Claim
58 words
A method of manufacturing a semiconductor device having an SOI structure according to claim 5, wherein the step of forming a polycrystalline silicon layer further includes the step of performing gettering by applying a heat treatment to said polycrystalline silicon layer in an ambience of at least one member selected from the group consisting of hydrogen and nitrogen.
Claim 10
Dependent Claim
83 words
A method of manufacturing a semiconductor device having an SOI structure according to claim 8, wherein the step of forming said polycrystalline silicon layer further includes the step of implanting an impurity into said polycrystalline silicon layer subsequent to said heat treatment, the step of applying said second selective oxidation treatment further includes the step of forming a high concentration impurity region for element isolation in the resulting exposed lateral end of said semiconductor layer by diffusing said impurity in said semiconductor layer.
Claim 11
Dependent Claim
51 words
A method of manufacturing a semiconductor device having an SOI structure according to claim 8, wherein the step of forming a polycrystalline silicon layer further includes the step of converting said polycrystalline silicon layer into amorphous silicon layer by implanting ions inactive with respect to silicon into said polycrystalline silicon layer.
Claim 12
Dependent Claim
57 words
A method of manufacturing a semiconductor device having an SOI structure according to claim 1, wherein the step of forming an oxidation-resistant film further includes the step of forming a high concentration impurity region for element isolation in said semiconductor layer by selectively implanting an impurity into said semiconductor layer using said oxidation-resistant film as a mask.
Claim 13
Dependent Claim
61 words
A method of manufacturing a semiconductor device having an SOI structure according to claim 1, wherein the step of forming a sidewall insulating layer further includes the step of forming an amorphous silicon layer to cover said oxidation-resistant film and the exposed surface of said semiconductor layer, and the step of forming said sidewall insulating layer on said amorphous silicon layer.
References Cited (Backward Citations)
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