Photoresist flow during the formation of a semiconductor device

Claim 2

A process used during the formation of a semiconductor device, comprising following steps: forming a first layer; forming a photoresist layer over said first layer; patterning said first layer using said photoresist layer as a mask and forming a first layer edge; subsequent to forming said first layer edge, flowing said photoresist layer to form at least one spacer used during doping in a reactive ion etch chamber.

Claim 3

The process of claim 1 wherein said photoresist layer flows to cover said edge.

Claim 4

The process of claim 1 wherein said fist layer is conductive silicon and forms a transistor gate.

Claim 5

The process of claim 1 wherein said first layer and said photoresist layer are formed over a substrate and said photoresist layer reduces an amount of doping material from entering said substrate during a doping step subsequent to said step of flowing said photoresist layer.

Claim 6

The process of claim 1 wherein said flowing step is performed in a chamber of a reactive ion etcher, said etcher having the following setpoints: a pressure of 400 millitorr; a wattage radio frequency of 600 watts; a nitrogen gas flow rate of 50 standard cubic centimeters; a magnetic field of zero gauss; and a duration of about 200 seconds.

Claim 7

The process of claim 1 wherein said step of forming said photoresist layer forms a patterned photoresist layer having a thickness of about 11,000 angstroms.

Claim 8

A process for forming spacers at edges of a first layer during the formation of a semiconductor device, comprising the following steps: forming a silicon layer over a substrate; forming a photoresist layer over said first layer; etching said first layer using said photoresist layer as a mask and forming a pair of edges from said first layer; flowing said photoresist layer over said edges to form spacers from said photoresist layer using a process which applies a pressure at a range of ten millitorr to two Torr, a wattage radio frequency of between one watt and 1000 watts, a gas flow rate of from one standard cubic centimeter to 500 standard cubic centimeters, a magnetic field of from zero gauss to 300 gauss at a duration of from one second to 600 seconds.

Claim 9

A process for forming spacers at edges of a first layer during the formation of a semiconductor device, comprising the following steps: forming a silicon layer over a substrate; forming a photoresist layer over said first layer; etching said first layer using said photoresist layer as a mask and forming a pair of edges from said first layer; flowing said photoresist layer over said edges to form spacers from said photoresist layer using a process which applies a pressure at a range of ten millitorr to two Torr, a wattage radio frequency of between one watt and 1000 watts, a gas flow rate of from one standard cubic centimeter to 500 standard cubic centimeters, a magnetic field of from zero gauss to 300 gauss at a duration of from one second to 600 seconds.

Claim 10

The process of claim 7 wherein said spacers prevent a doping material from doping said substrate underneath said spacers thereby forming an offset between said etched first layer and said loped substrate.

Claim 11

The process of claim 7 wherein said flowing step is performed in a chamber of a reactive ion etcher.

Claim 12

The process of claim 7 wherein said flowing step is performed in a chamber of a reactive ion etcher, said etcher having the following setpoints: a pressure of 400 millitorr; a wattage radio frequency of 600 watts; a nitrogen gas flow rate of 50 standard cubic centimeters; a magnetic field of zero gauss; and a duration of about 200 seconds.

Claim 13

The process of claim 7, wherein said step of forming said photoresist layer forms a photoresist layer having a thickness of about 11,000 angstroms.

Claim 14

A process for forming a transistor comprising the following steps: forming a gate layer; forming a photoresist layer over said gate layer; etching said gate layer using said photoresist layer as a mask and forming a pair of edges in said gate layer; flowing said photoresist layer over said edges to form spacers from said photoresist layer by applying a pressure at a range of ten millitorr to two Torr, a wattage radio frequency of between one watt and 1000 watts, a gas flow rate of from one standard cubic centimeter to 500 standard cubic centimeters, a magnetic field of from zero gauss to 300 gauss at a duration of from one second to 600 seconds.

Claim 15

A process for forming a transistor comprising the following steps: forming a gate layer; forming a photoresist layer over said gate layer; etching said gate layer using said photoresist layer as a mask and forming a pair of edges in said gate layer; flowing said photoresist layer over said edges to form spacers from said photoresist layer by applying a pressure at a range of ten millitorr to two Torr, a wattage radio frequency of between one watt and 1000 watts, a gas flow rate of from one standard cubic centimeter to 500 standard cubic centimeters, a magnetic field of from zero gauss to 300 gauss at a duration of from one second to 600 seconds.

Claim 16

The process of claim 12 further comprising the step of doping said substrate wherein said spacers reduce said doping of said substrate under said spacers thereby forming an offset between said etched gate layer and said doped substrate.

Claim 17

The process of claim 12 wherein said flowing step is performed in a chamber of a reactive ion etcher.

Claim 18

The process of claim 12 wherein said flowing step is performed in a chamber of a reactive ion etcher, said etcher having the following setpoints: a pressure of 400 millitorr; a wattage radio frequency of 600 watts; a nitrogen gas flow rate of 50 standard cubic centimeters; a magnetic field of zero gauss; and a duration of about 200 seconds.

Claim 19

The process of claim 12, wherein said step of forming said photoresist layer forms a photoresist layer having a thickness of about 11,000 angstroms.

Claim 20

The process of claim 12, wherein said step of forming said photoresist layer forms a photoresist layer having a thickness of about 11,000 angstroms and said gate layer has a thickness of about 5,000 angstroms.

Claim 21

The method of claim 2 wherein said edge is completely covered during said step of flowing said photoresist.