Patent US5656512A successfully refreshed from Google Patents.
US5656512A
Expired / Lapsed
US
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Method of manufacturing a semiconductor accelerometer
Assignee: Intersil Corp
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Filing: 1995-05-31
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Granted: 1997-08-12
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Expires: 2015-05-31
Abstract
Abstract A semiconductor accelerometer is formed by attaching a semiconductor layer to a handle wafer by a thick oxide layer. Accelerometer geometry is patterned in the semiconductor layer, which is then used as a mask to etch out a cavity in the underlying thick oxide. The mask may include one or more apertures, so that a mass region will have corresponding apertures to the underlying oxide layer. The structure resulting from an oxide etch has the intended accelerometer geometry of a large volume mass region supported in cantilever fashion by a plurality of piezo-resistive arm regions to a surrounding, supporting portion of the semiconductor layer. Directly beneath this accelerometer geometry is a flex-accommodating cavity realized by the removal of the underlying oxide layer. The semiconductor layer remains attached to the handle wafer by means of the thick oxide layer that surrounds the accelerometer geometry, and which was adequately masked by the surrounding portion of the top semiconductor layer during the oxide etch step. In a second embodiment support arm regions are dimensioned separately from the mass region, using a plurality of buried oxide regions as semiconductor etch stops.
Inventors
- 👤 Bruce Allan Beitman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 18:50
CPC Classifications
B; B81; B81C; B81C1/00; B81C1/00015; B81C1/00134; B81C1/0015; G; G01; G01P; G01P15/00; G01P15/02; G01P15/08; G01P15/0802; B81B; B81B2201/00; B81B2201/02; B81B2201/0228; B81B2201/0235; B81B2203/00; B81B2203/03; B81B2203/0315; B81C2201/00; B81C2201/01; B81C2201/0101; B81C2201/0102; B81C2201/0104; B81C2201/0128; B81C2201/013; B81C2201/0135; B81C2201/0136; B81C2201/0174; B81C2201/019; B81C2201/0191; G01P2015/0805; G01P2015/0822; G01P2015/0825; G01P2015/0828
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
273 words
A process for manufacturing a semiconductor device comprising the steps of: (a) forming a buried insulator region beneath a first portion of a first surface of a semiconductor substrate; (b) forming a semiconductor layer on said first surface of said semiconductor substrate, so as to overlie said buried insulator region therebeneath; (c) attaching the structure formed in step (b) to a support substrate by way of an insulator layer such that said insulator layer lies between said semiconductor layer and said support substrate; (d) selectively forming an etch masking layer on said semiconductor substrate so as to define a patterned etch mask having a topology that exposes a first portion of said semiconductor substrate overlying said buried insulator region therebeneath and a second portion of said semiconductor substrate spaced-apart from said first portion thereof and overlying a portion of said substrate spaced-apart from said buried insulator region therein; (e) exposing the structure resulting from step (d) to a first etchant which etches the exposed first portion of said semiconductor substrate down to said buried insulator region, and etches the exposed second portion of said semiconductor substrate and said semiconductor layer therebeneath to said insulator layer; and (f) exposing the structure resulting from step (e) to a second etchant which etches said buried insulator region and said insulator layer, so as to leave a relatively large mass region of semiconductor material between said first and second portions of said semiconductor substrate supported by a reduced thickness portion of said semiconductor substrate and adjoining material of said semiconductor layer beneath the region of said semiconductor substrate from which said buried insulator region has been etched.
Claim 2
Dependent Claim
273 words
A process for manufacturing a semiconductor device comprising the steps of: (a) forming a buried insulator region beneath a first portion of a first surface of a semiconductor substrate; (b) forming a semiconductor layer on said first surface of said semiconductor substrate, so as to overlie said buried insulator region therebeneath; (c) attaching the structure formed in step (b) to a support substrate by way of an insulator layer such that said insulator layer lies between said semiconductor layer and said support substrate; (d) selectively forming an etch masking layer on said semiconductor substrate so as to define a patterned etch mask having a topology that exposes a first portion of said semiconductor substrate overlying said buried insulator region therebeneath and a second portion of said semiconductor substrate spaced-apart from said first portion thereof and overlying a portion of said substrate spaced-apart from said buried insulator region therein; (e) exposing the structure resulting from step (d) to a first etchant which etches the exposed first portion of said semiconductor substrate down to said buried insulator region, and etches the exposed second portion of said semiconductor substrate and said semiconductor layer therebeneath to said insulator layer; and (f) exposing the structure resulting from step (e) to a second etchant which etches said buried insulator region and said insulator layer, so as to leave a relatively large mass region of semiconductor material between said first and second portions of said semiconductor substrate supported by a reduced thickness portion of said semiconductor substrate and adjoining material of said semiconductor layer beneath the region of said semiconductor substrate from which said buried insulator region has been etched.
Claim 3
Dependent Claim
76 words
A process according to claim 1, wherein step (a) comprises: (a1) selectively forming an implant mask layer on a first surface of said semiconductor substrate so as to expose a first portion of said first surface of said semiconductor substrate; (a2) implanting material into a first buried region of said semiconductor substrate beneath said exposed first portion of said first surface thereof; and (a3) annealing the structure of step (a2) to form said buried insulator region.
Claim 4
Dependent Claim
41 words
A process according to claim 1, wherein step (b) comprises non-selectively forming a semiconductor layer on said first surface of said semiconductor substrate and introducing conductivity type determining impurities into that portion of said semiconductor layer overlying said buried insulator region.
Claim 5
Dependent Claim
83 words
A process according to claim 1, wherein step (c) comprises forming a first conductive layer on said semiconductor layer, forming a second conductive layer on said support substrate, and attaching said first and second conductive layers to opposite sides of an insulator layer, and wherein step (e) includes etching through said first insulator layer exposed by said etch masking layer, thereby forming a piezoelectric structure defined by said first and second conductive layers and the cantilevered relatively large mass region of semiconductor material.
Claim 6
Dependent Claim
380 words
A process for manufacturing a semiconductor device comprising the steps of: (a) forming a plurality of spaced-apart insulator finger regions buried beneath respective ones of plural first narrow portions of a first surface of a semiconductor substrate, said plural first portions of said first surface of said substrate extending from a second portion of said first surface of semiconductor substrate to a surrounding, spaced-apart, third portion of said first surface of semiconductor substrate, said second portion of said first surface of semiconductor substrate having a lateral dimension larger than those of said first, narrow portions of said first surface of said semiconductor substrate; (b) forming a semiconductor layer on said first surface of said semiconductor substrate, so as to overlie said insulator finger regions therebeneath; (c) attaching the structure formed in step (b) to a support substrate by way of an insulator layer such that said insulator layer lies between said semiconductor layer and said support substrate; (d) selectively forming an etch masking layer on said semiconductor substrate so as to define a patterned etch mask having a topology that exposes plural first narrow portions of a second surface of said semiconductor substrate overlying respective ones of said plurality of spaced-apart insulator finger regions therebeneath and a second portion of said second surface of said semiconductor substrate overlying said second portion of said first surface of said semiconductor substrate; (e) exposing the structure resulting from step (d) to a first etchant which etches the exposed plural first narrow portions of said second surface of said semiconductor substrate down to said plurality of spaced-apart insulator finger regions, and etches the exposed second portion of said second surface of said semiconductor substrate and said semiconductor layer therebeneath to said insulator layer; and (f) exposing the structure resulting from step (e) to a second etchant which etches said plurality of spaced-apart insulator finger regions and said insulator layer, so as to leave a relatively large mass region of semiconductor material between said second and third portions of said first semiconductor substrate supported by a plurality of reduced thickness portions of said semiconductor substrate and adjoining material of said semiconductor layer beneath respective ones of said plurality of narrow regions of said semiconductor substrate from which said buried insulator finger regions have been etched.
Claim 7
Dependent Claim
380 words
A process for manufacturing a semiconductor device comprising the steps of: (a) forming a plurality of spaced-apart insulator finger regions buried beneath respective ones of plural first narrow portions of a first surface of a semiconductor substrate, said plural first portions of said first surface of said substrate extending from a second portion of said first surface of semiconductor substrate to a surrounding, spaced-apart, third portion of said first surface of semiconductor substrate, said second portion of said first surface of semiconductor substrate having a lateral dimension larger than those of said first, narrow portions of said first surface of said semiconductor substrate; (b) forming a semiconductor layer on said first surface of said semiconductor substrate, so as to overlie said insulator finger regions therebeneath; (c) attaching the structure formed in step (b) to a support substrate by way of an insulator layer such that said insulator layer lies between said semiconductor layer and said support substrate; (d) selectively forming an etch masking layer on said semiconductor substrate so as to define a patterned etch mask having a topology that exposes plural first narrow portions of a second surface of said semiconductor substrate overlying respective ones of said plurality of spaced-apart insulator finger regions therebeneath and a second portion of said second surface of said semiconductor substrate overlying said second portion of said first surface of said semiconductor substrate; (e) exposing the structure resulting from step (d) to a first etchant which etches the exposed plural first narrow portions of said second surface of said semiconductor substrate down to said plurality of spaced-apart insulator finger regions, and etches the exposed second portion of said second surface of said semiconductor substrate and said semiconductor layer therebeneath to said insulator layer; and (f) exposing the structure resulting from step (e) to a second etchant which etches said plurality of spaced-apart insulator finger regions and said insulator layer, so as to leave a relatively large mass region of semiconductor material between said second and third portions of said first semiconductor substrate supported by a plurality of reduced thickness portions of said semiconductor substrate and adjoining material of said semiconductor layer beneath respective ones of said plurality of narrow regions of said semiconductor substrate from which said buried insulator finger regions have been etched.
Claim 8
Dependent Claim
39 words
A process according to claim 5, wherein step (b) comprises non-selectively forming a semiconductor layer on said first surface of said semiconductor substrate and introducing conductivity-type determining impurities into portions of said semiconductor layer overlying said insulator finger regions.
Claim 9
Dependent Claim
83 words
A process according to claim 5, wherein step (c) comprises forming a first conductive layer on said semiconductor layer, forming a second conductive layer on said support substrate, and attaching said first and second conductive layers to opposite sides of an insulator layer, and wherein step (e) includes etching through said first insulator layer exposed by said etch masking layer, thereby forming a piezoelectric structure defined by said first and second conductive layers and the cantilevered relatively large mass region of semiconductor material.
Claim 10
Dependent Claim
236 words
A process for manufacturing a semiconductor device comprising the steps of: (a) forming a buried insulator region beneath a first portion of a first surface of a semiconductor substrate; (b) attaching said semiconductor substrate to a support substrate by way of an insulator layer such that said insulator layer lies between said semiconductor substrate and said support substrate; (c) selectively forming an etch masking layer on said semiconductor substrate so as to define a patterned etch mask having a topology that exposes a first portion of said semiconductor substrate overlying said buried insulator region therebeneath and a second portion of said semiconductor substrate spaced-apart from said first portion thereof and overlying a portion of said substrate spaced-apart from said buried insulator region therein; (d) exposing the structure resulting from step (c) to a first etchant which etches the exposed first portion of said semiconductor substrate down to said buried insulator region, and etches the exposed second portion of said semiconductor substrate to said insulator layer; and (e) exposing the structure resulting from step (d) to a second etchant which etches said buried insulator region and said insulator layer, so as to leave a relatively large mass region of semiconductor material between said first and second portions of said semiconductor substrate supported by a reduced thickness portion of said semiconductor substrate beneath that region of said semiconductor substrate from which said buried insulator region has been etched.
Claim 11
Dependent Claim
236 words
A process for manufacturing a semiconductor device comprising the steps of: (a) forming a buried insulator region beneath a first portion of a first surface of a semiconductor substrate; (b) attaching said semiconductor substrate to a support substrate by way of an insulator layer such that said insulator layer lies between said semiconductor substrate and said support substrate; (c) selectively forming an etch masking layer on said semiconductor substrate so as to define a patterned etch mask having a topology that exposes a first portion of said semiconductor substrate overlying said buried insulator region therebeneath and a second portion of said semiconductor substrate spaced-apart from said first portion thereof and overlying a portion of said substrate spaced-apart from said buried insulator region therein; (d) exposing the structure resulting from step (c) to a first etchant which etches the exposed first portion of said semiconductor substrate down to said buried insulator region, and etches the exposed second portion of said semiconductor substrate to said insulator layer; and (e) exposing the structure resulting from step (d) to a second etchant which etches said buried insulator region and said insulator layer, so as to leave a relatively large mass region of semiconductor material between said first and second portions of said semiconductor substrate supported by a reduced thickness portion of said semiconductor substrate beneath that region of said semiconductor substrate from which said buried insulator region has been etched.
Claim 12
Dependent Claim
83 words
A process according to claim 8, wherein step (b) comprises forming a first conductive layer on said semiconductor substrate, forming a second conductive layer on said support substrate, and attaching said first and second conductive layers to opposite sides of an insulator layer, and wherein step (d) includes etching through said first insulator layer exposed by said etch masking layer, thereby forming a piezoelectric structure defined by said first and second conductive layers and the cantilevered relatively large mass region of semiconductor material.
Claim 13
Dependent Claim
347 words
A process for manufacturing a semiconductor device comprising the steps of: (a) forming a plurality of spaced-apart insulator finger regions buried beneath respective ones of a plural first narrow portions of a first surface of a semiconductor substrate, said plural first portions of said first surface of said substrate extending from a second portion of said first surface of semiconductor substrate to a surrounding, spaced-apart, third portion of said first surface of semiconductor substrate, said second portion of said first surface of semiconductor substrate having a lateral dimension larger than those of said first, narrow portions of said first surface of said semiconductor substrate; (b) attaching the structure formed in step (a) to a support substrate by way of an insulator layer such that said insulator layer lies between said semiconductor substrate and said support substrate; (c) selectively forming an etch masking layer on said semiconductor substrate so as to define a patterned etch mask having a topology that exposes said plural first narrow portions of a second surface of said semiconductor substrate overlying respective ones of said plurality of spaced-apart insulator finger regions therebeneath and a second portion of said second surface of said semiconductor substrate overlying said second portion of said first surface of said semiconductor substrate; (d) exposing the structure resulting from step (c) to a first etchant which etches the exposed plural first narrow portions of said second surface of said semiconductor substrate down to said plurality of spaced-apart insulator finger regions, and etches the exposed second portion of said second surface of said semiconductor substrate to said insulator layer; and (e) exposing the structure resulting from step (d) to a second etchant which etches said plurality of spaced-apart insulator finger regions and said insulator layer, so as to leave a relatively large mass region of semiconductor material between said second and third portions of said semiconductor substrate supported by a plurality of reduced thickness portions of said semiconductor substrate beneath respective ones of said plurality of narrow regions of said semiconductor substrate from which said buried insulator finger regions have been etched.
Claim 14
Dependent Claim
347 words
A process for manufacturing a semiconductor device comprising the steps of: (a) forming a plurality of spaced-apart insulator finger regions buried beneath respective ones of a plural first narrow portions of a first surface of a semiconductor substrate, said plural first portions of said first surface of said substrate extending from a second portion of said first surface of semiconductor substrate to a surrounding, spaced-apart, third portion of said first surface of semiconductor substrate, said second portion of said first surface of semiconductor substrate having a lateral dimension larger than those of said first, narrow portions of said first surface of said semiconductor substrate; (b) attaching the structure formed in step (a) to a support substrate by way of an insulator layer such that said insulator layer lies between said semiconductor substrate and said support substrate; (c) selectively forming an etch masking layer on said semiconductor substrate so as to define a patterned etch mask having a topology that exposes said plural first narrow portions of a second surface of said semiconductor substrate overlying respective ones of said plurality of spaced-apart insulator finger regions therebeneath and a second portion of said second surface of said semiconductor substrate overlying said second portion of said first surface of said semiconductor substrate; (d) exposing the structure resulting from step (c) to a first etchant which etches the exposed plural first narrow portions of said second surface of said semiconductor substrate down to said plurality of spaced-apart insulator finger regions, and etches the exposed second portion of said second surface of said semiconductor substrate to said insulator layer; and (e) exposing the structure resulting from step (d) to a second etchant which etches said plurality of spaced-apart insulator finger regions and said insulator layer, so as to leave a relatively large mass region of semiconductor material between said second and third portions of said semiconductor substrate supported by a plurality of reduced thickness portions of said semiconductor substrate beneath respective ones of said plurality of narrow regions of said semiconductor substrate from which said buried insulator finger regions have been etched.
Claim 15
Dependent Claim
72 words
A process according to claim 10, wherein step (a) comprises forming a first conductive layer on said semiconductor substrate, and step (b) comprises forming a second conductive layer on said support substrate and attaching said first and second conductive layers to opposite sides of an insulator layer, and wherein step (d) includes etching through said first insulator layer, and underlying material of said first conductive layer, exposed by said etch masking layer.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 2000-08-11 | 2001-02-10 | 2001-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-11 | 2005-02-10 | 2005-08-12 | $3760.00 | Window Closed / Lapsed |
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