Patent US5656337A successfully refreshed from Google Patents.
US5656337A
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Method of forming a dielectric layer
Assignee: Samsung Electronics Co Ltd
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Filing: 1994-08-31
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Granted: 1997-08-12
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Expires: 2014-08-31
Abstract
Abstract A deposition rate of a dielectric material is varied with the electrical polarity of an underlying layer to obtain excellent deposition and planarization characteristics. A conductive layer and the underlying dielectric are surface-treated to have different electrical polarities so that the dielectric is formed by using the difference of deposition rates of the dielectric material between that on the conductive layer and that on the underlying dielectric. A CVD apparatus having a DC power source connected between a susceptor and a gas injection portion thereof is provided. The deposition and planarization can be performed at low temperatures and are simplified in process.
Inventors
- 👤 In-seon Park
- 👤 Myoung-Bum Lee
- 👤 Chang-Gee Hong
- 👤 Chang-Gyu Kim
- 👤 U-In Chung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0227; C23C16/0245; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C23C16/44; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6502; H10P14/6512; H10P14/6514; H10P14/6516; H10P14/6529; H10P14/6532; H10P95/00; H10P95/06; H10P14/6336; H10P14/6922
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
106 words
A method of forming a dielectric on a substrate, said method comprising steps of: forming a first material layer on a surface of said substrate; treating said first material layer to have a first electrical polarity; and depositing a second material using at least one material selected from a group consisting of O 3 -TEOS oxide and O 3 -HMDS oxide on said first material layer to form a second material layer, said second material having an intermediate product and a deposition rate which varies according to a second electrical polarity of said intermediate product, said second electrical polarity being opposite to said first electrical polarity.
Claim 2
Independent Claim
106 words
A method of forming a dielectric on a substrate, said method comprising steps of: forming a first material layer on a surface of said substrate; treating said first material layer to have a first electrical polarity; and depositing a second material using at least one material selected from a group consisting of O 3 -TEOS oxide and O 3 -HMDS oxide on said first material layer to form a second material layer, said second material having an intermediate product and a deposition rate which varies according to a second electrical polarity of said intermediate product, said second electrical polarity being opposite to said first electrical polarity.
Claim 3
Dependent Claim
34 words
A method of forming a dielectric on a substrate according to claim 1, wherein said step of treating said first material layer comprises a step of treating said first material layer with a plasma.
Claim 4
Dependent Claim
54 words
A method of forming a dielectric on a substrate according to claim 2, wherein said step of treating said first material layer includes a step of providing a plasma selected from a group consisting of N 2 +NH 3 , N 2 , N 2 O, O 2 , O 3 and argon plasmas.
Claim 5
Dependent Claim
25 words
A method of forming a dielectric on a substrate according to claim 1, comprising a further step of implanting ions in said first material layer.
Claim 6
Dependent Claim
52 words
A method of forming a dielectric on a substrate according to claim 1, wherein said step of treating said first material layer includes a step of providing a semiconductor apparatus having a DC power source connected between a susceptor of said semiconductor apparatus and a gas injection portion of said semiconductor apparatus.
Claim 7
Independent Claim
137 words
A method of forming a dielectric on a substrate, said method comprising steps of: coating and patterning a conductive material on an underlying dielectric layer, thereby forming a conductive layer having a first electrical polarity on said underlying dielectric layer, said underlying dielectric layer having portions exposed by said patterning of said conductive material; treating said exposed portions of said underlying dielectric layer to have a second electrical polarity, said second electrical polarity being opposite to said first electrical polarity; and depositing a dielectric material having a first deposition rate on said exposed portions of said underlying dielectric layer and a second deposition rate lower than said first deposition rate on said conductive layer, said dielectric material being at least one material selected from a group consisting of O 3 -TEOS oxide and O 3 -HMDS oxide.
Claim 8
Independent Claim
137 words
A method of forming a dielectric on a substrate, said method comprising steps of: coating and patterning a conductive material on an underlying dielectric layer, thereby forming a conductive layer having a first electrical polarity on said underlying dielectric layer, said underlying dielectric layer having portions exposed by said patterning of said conductive material; treating said exposed portions of said underlying dielectric layer to have a second electrical polarity, said second electrical polarity being opposite to said first electrical polarity; and depositing a dielectric material having a first deposition rate on said exposed portions of said underlying dielectric layer and a second deposition rate lower than said first deposition rate on said conductive layer, said dielectric material being at least one material selected from a group consisting of O 3 -TEOS oxide and O 3 -HMDS oxide.
Claim 9
Dependent Claim
42 words
A method of forming a dielectric on a substrate according to claim 6, wherein said step of treating said exposed portions of said underlying dielectric layer comprises a step of treating said exposed portions of said underlying dielectric layer with a plasma.
Claim 10
Dependent Claim
58 words
A method of forming a dielectric on a substrate according to claim 7, wherein said step of treating said exposed portions of said underlying dielectric layer includes a step of providing a plasma selected from a group consisting of N 2 +NH 3 , N 2 , N 2 O, O 2 , O 3 and argon plasmas.
Claim 11
Dependent Claim
41 words
A method of forming a dielectric on a substrate according to claim 6, wherein said step of treating said exposed portions of said underlying dielectric layer comprises a step of implanting ions in said exposed portions of said underlying dielectric layer.
Claim 12
Dependent Claim
56 words
A method of forming a dielectric on a substrate according to claim 6, wherein said step of treating said exposed portions of said underlying dielectric layer includes a step of providing a semiconductor apparatus having a DC power source connected between a susceptor of said semiconductor apparatus and a gas injection portion of said semiconductor apparatus.
Claim 13
Dependent Claim
47 words
A method of forming a dielectric on a substrate according to claim 10, wherein said step of treating said exposed portions of said underlying dielectric layer further includes a step of connecting a negative electrode of said DC power source to said susceptor of said semiconductor apparatus.
References Cited (Backward Citations)
No citation records indexed.
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