Patent US5656330A successfully refreshed from Google Patents.
US5656330A
Expired / Lapsed
US
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Resistive element having a resistivity which is thermally stable against heat treatment, and method and apparatus for producing same
Assignee: Futaba Corp
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Filing: 1995-03-22
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Granted: 1997-08-12
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Expires: 2015-03-22
Abstract
Abstract A resistive element is provided which is used on a cathode conductor side of a field emission type fluorescent display device and made of a hydrogenated amorphous silicon film. Nitride is added during deposition of the hydrogenated amorphous silicon film containing an impurity for controlling resistivity of the film. A method for producing the resistive element and an apparatus therefor are also disclosed.
Inventors
- 👤 Takahiro Niiyama
- 👤 Shigeo Itoh
- 👤 Teruo Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:34
CPC Classifications
H; H01; H01C; H01C7/00; H01C7/006; H10; H10D; H10D1/00; H10D1/40; H10D1/47
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
59 words
A method, comprising: depositing hydrogenated amorphous silicon on a substrate using a starting material gas comprising 50% or more of a nitrogen bearing gas; wherein said hydrogenated amorphous silicon comprises nitrogen and an impurity for controlling the resistivity of said hydrogenated amorphous silicon so that said hydrogenated amorphous silicon, has a resistivity of 7×10 2 to 3×10 6 Ωcm.
Claim 2
Independent Claim
59 words
A method, comprising: depositing hydrogenated amorphous silicon on a substrate using a starting material gas comprising 50% or more of a nitrogen bearing gas; wherein said hydrogenated amorphous silicon comprises nitrogen and an impurity for controlling the resistivity of said hydrogenated amorphous silicon so that said hydrogenated amorphous silicon, has a resistivity of 7×10 2 to 3×10 6 Ωcm.
Claim 3
Dependent Claim
22 words
The method of claim 1, wherein said nitrogen bearing gas is selected from the group consisting of dinitrogen, ammonia and nitrous oxide.
Claim 4
Dependent Claim
12 words
The method of claim 2, wherein said nitrogen bearing gas is dinitrogen.
Claim 5
Dependent Claim
18 words
The method of claim 1, wherein said substrate is at a temperature of 250°-430° C. during said depositing.
Claim 6
Dependent Claim
22 words
The method of claim 1, further comprising forming a cathode conductive layer on said substrate, prior to depositing said hydrogenated amorphous silicon.
Claim 7
Dependent Claim
28 words
The method of claim 5, further comprising forming (i) an insulating layer, (ii) a gate and (iii) an emitter on said substrate, thereby preparing a field emission cathode.
Claim 8
Dependent Claim
50 words
The method of claim 1, wherein said hydrogenated amorphous silicon has a resistivity after annealing said hydrogenated amorphous silicon at 550° C. for one hour which is substantially the same as a resistivity of said hydrogenated amorphous silicon after annealing said hydrogenated amorphous silicon at 450° C. for one hour.
Claim 9
Dependent Claim
49 words
The method of claim 1, wherein said depositing is carried out with a starting material gas comprising 50% or more of a nitrogen bearing gas selected from the group consisting of dinitrogen, ammonia and nitrous oxide, and said substrate is at a temperature of 250°-430° C. during said depositing.
Claim 10
Independent Claim
103 words
A method, comprising depositing hydrogenated amorphous silicon on a substrate using a starting material gas comprising 50% or more of a nitrogen bearing gas; wherein said hydrogenated amorphous silicon comprises nitrogen and an impurity for controlling the resistivity of said hydrogenated amorphous silicon so that hydrogenated amorphous silicon has a resistivity of 7×10 2 to 3×10 6 Ωcm, and said hydrogenated amorphous silicon has a resistivity after annealing said hydrogenated amorphous silicon at 550° C. for one hour which is substantially the same as a resistivity of said hydrogenated amorphous silicon after annealing said hydrogenated amorphous silicon at 450° C. for one hour.
Claim 11
Independent Claim
103 words
A method, comprising depositing hydrogenated amorphous silicon on a substrate using a starting material gas comprising 50% or more of a nitrogen bearing gas; wherein said hydrogenated amorphous silicon comprises nitrogen and an impurity for controlling the resistivity of said hydrogenated amorphous silicon so that hydrogenated amorphous silicon has a resistivity of 7×10 2 to 3×10 6 Ωcm, and said hydrogenated amorphous silicon has a resistivity after annealing said hydrogenated amorphous silicon at 550° C. for one hour which is substantially the same as a resistivity of said hydrogenated amorphous silicon after annealing said hydrogenated amorphous silicon at 450° C. for one hour.
Claim 12
Dependent Claim
22 words
The method of claim 9, wherein said nitrogen bearing gas is selected from the group consisting of dinitrogen, ammonia and nitrous oxide.
Claim 13
Dependent Claim
12 words
The method of claim 10, wherein said nitrogen bearing gas is dinitrogen.
Claim 14
Dependent Claim
18 words
The method of claim 9, wherein said substrate is at a temperature of 250°-430° C. during said depositing.
Claim 15
Dependent Claim
22 words
The method of claim 9, further comprising forming a cathode conductive layer on said substrate, prior to depositing said hydrogenated amorphous silicon.
Claim 16
Dependent Claim
28 words
The method of claim 13, further comprising forming (i) an insulating layer, (ii) a gate and (iii) an emitter on said substrate, thereby preparing a field emission cathode.
References Cited (Backward Citations)
US4668599A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-08-11 | 2001-02-10 | 2001-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-11 | 2005-02-10 | 2005-08-12 | $3760.00 | Window Closed / Lapsed |
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