Patent US5654224A successfully refreshed from Google Patents.
US5654224A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capacitor construction with oxidation barrier blocks
Assignee: Micron Technology Inc
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Filing: 1996-07-25
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Granted: 1997-08-05
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Expires: 2016-07-25
Abstract
Abstract A method of forming a capacitor apparatus includes providing a substrate having a node, providing an electrically conductive reaction barrier layer with opposed recessed lateral edges over the substrate node, forming an inner capacitor plate, providing oxidation barrier blocks over the opposed recessed lateral edges, forming a dielectric layer and providing an outer capacitor plate.
Inventors
- 👤 Thomas A. Figura
- 👤 Paul J. Schuele
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:40
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
52 words
A method for forming a capacitor on a substrate having a node, comprising: forming a reaction barrier layer over the node, the reaction barrier layer having lateral edges; forming a lower capacitor plate over the reaction barrier layer; and forming oxidation barrier blocks over the lateral edges of the reaction barrier layer.
Claim 2
Independent Claim
52 words
A method for forming a capacitor on a substrate having a node, comprising: forming a reaction barrier layer over the node, the reaction barrier layer having lateral edges; forming a lower capacitor plate over the reaction barrier layer; and forming oxidation barrier blocks over the lateral edges of the reaction barrier layer.
Claim 3
Dependent Claim
20 words
A method as claimed in claim 1, and further comprising: forming a capacitor dielectric layer over the lower capacitor plate.
Claim 4
Dependent Claim
23 words
A method as claimed in claim 1, and further comprising: forming a dielectric layer comprising barium strontium titanate over the lower capacitor plate.
Claim 5
Dependent Claim
33 words
A method as claimed in claim 1, and further comprising: forming a dielectric layer comprising barium strontium titanate over the inner capacitor plate; and forming an outer capacitor plate over the dielectric layer.
Claim 6
Dependent Claim
49 words
A method as claimed in claim 1, wherein the step of forming the reaction barrier layer further comprises: etching the reaction barrier layer to form opposing lateral recesses beneath the lower capacitor plate layer, the lateral edges of the reaction barrier layer positioned laterally outwardly relative to the node.
Claim 7
Dependent Claim
40 words
A method as claimed in claim 1, wherein the step of forming a lower capacitor plate comprises: etching the lower capacitor plate layer into an external shape having lateral confines corresponding to that of a desired finished lower capacitor plate.
Claim 8
Dependent Claim
27 words
A method as claimed in claim 1, wherein the node comprises silicon material, the lower capacitor plate comprises platinum, and the reaction barrier layer comprises titanium nitride.
Claim 9
Independent Claim
57 words
A method of forming a capacitor on a substrate having a node, comprising: forming a reaction barrier layer over the node; forming a lower capacitor plate over the reaction barrier layer; forming oxidation barrier blocks interposed between the substrate and the lower capacitor plate; and forming a layer of barium strontium titanate over the lower capacitor plate.
Claim 10
Independent Claim
57 words
A method of forming a capacitor on a substrate having a node, comprising: forming a reaction barrier layer over the node; forming a lower capacitor plate over the reaction barrier layer; forming oxidation barrier blocks interposed between the substrate and the lower capacitor plate; and forming a layer of barium strontium titanate over the lower capacitor plate.
Claim 11
Dependent Claim
32 words
A method as claimed in claim 8, wherein the reaction barrier layer has lateral edges which are recessed beneath the lower capacitor plate, and are disposed laterally outwardly relative to the node.
Claim 12
Dependent Claim
48 words
A method as claimed in claim 8, wherein the reaction barrier layer has lateral edges which are recessed beneath the lower capacitor plate, and are disposed laterally outwardly relative to the node, and wherein the oxidation barrier blocks are positioned in covering relation relative to the lateral edges.
Claim 13
Dependent Claim
14 words
A method as claimed in claim 8, wherein the oxidation barrier blocks are dielectric.
Claim 14
Dependent Claim
28 words
A method as claimed in claim 8, wherein the node comprises a silicon material, the inter capacitor plate comprises platinum, and the reaction barrier layer comprises titanium nitride.
Claim 15
Independent Claim
96 words
A method of forming a capacitor on a substrate having a node, comprising: forming a reaction barrier layer over the node, the reaction barrier layer having opposing lateral edges; forming a lower capacitor plate over the reaction barrier layer, the lateral edges of the reaction barrier layer disposed in a recessed position beneath the lower capacitor plate; forming oxidation barrier blocks over the lateral edges of the reaction barrier layer, the oxidation barrier layer interposed between the substrate and the lower capacitor plate; and forming a layer of barium strontium titanate over the lower capacitor plate.
Claim 16
Independent Claim
96 words
A method of forming a capacitor on a substrate having a node, comprising: forming a reaction barrier layer over the node, the reaction barrier layer having opposing lateral edges; forming a lower capacitor plate over the reaction barrier layer, the lateral edges of the reaction barrier layer disposed in a recessed position beneath the lower capacitor plate; forming oxidation barrier blocks over the lateral edges of the reaction barrier layer, the oxidation barrier layer interposed between the substrate and the lower capacitor plate; and forming a layer of barium strontium titanate over the lower capacitor plate.
Claim 17
Independent Claim
72 words
A method of forming a capacitor having inner and outer capacitor plates and a dielectric layer interposed between the inner and outer capacitor plates, the capacitor formed over a substrate having a node, the method comprising: forming a reaction barrier layer over the substrate and beneath the lower capacitor plate layer, the reaction barrier layer having lateral edges; and forming oxidation barrier blocks over the lateral edges of the reaction barrier layer.
Claim 18
Independent Claim
72 words
A method of forming a capacitor having inner and outer capacitor plates and a dielectric layer interposed between the inner and outer capacitor plates, the capacitor formed over a substrate having a node, the method comprising: forming a reaction barrier layer over the substrate and beneath the lower capacitor plate layer, the reaction barrier layer having lateral edges; and forming oxidation barrier blocks over the lateral edges of the reaction barrier layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-04 | 2001-02-03 | 2001-08-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-04 | 2005-02-03 | 2005-08-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-04 | 2009-02-03 | 2009-08-05 | $7700.00 | Window Closed / Lapsed |