Patent US5652762A successfully refreshed from Google Patents.
US5652762A
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Semiconductor laser device and method for fabricating the same and strained quantum well crystal and method for fabricating the same
Assignee: Panasonic Holdings Corp
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Filing: 1995-08-28
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Granted: 1997-07-29
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Expires: 2015-08-28
Abstract
Abstract The semiconductor laser device of the invention includes: a strained quantum well structure including a well layer and a barrier layer, and a semiconductor substrate for supporting the strained quantum well structure. In the semiconductor laser device, at least one of the well layer and the barrier layer is composed of a mixed crystal where an atomic ordering is generated.
Inventors
- 👤 Nobuyuki Otsuka
- 👤 Masahiro Kito
- 👤 Masato Ishino
- 👤 Yasushi Matsui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:08
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; B; B82; B82Y; B82Y20/00; H01S5/32; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/80; H10H20/81; H10H20/811; H10H20/812; H01S5/3206; H01S5/3207; H01S5/3403; H01S5/343; H01S5/34306; H01S5/34313; H01S5/3434
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
99 words
A semiconductor laser device comprising: a strained quantum well structure including a well layer and a barrier layer, and a semiconductor substrate for supporting the strained quantum well structure, wherein the well layer and the barrier layer are composed of an InGaAsP mixed crystal having respectively different energy band gaps from each other, and wherein, in at least one of the well layer and the barrier layer, an atomic ordering is generated so that a lattice plane of a first compound and a lattice plane of a second compound are alternately stacked one by one to constitute the layer.
Claim 2
Dependent Claim
99 words
A semiconductor laser device comprising: a strained quantum well structure including a well layer and a barrier layer, and a semiconductor substrate for supporting the strained quantum well structure, wherein the well layer and the barrier layer are composed of an InGaAsP mixed crystal having respectively different energy band gaps from each other, and wherein, in at least one of the well layer and the barrier layer, an atomic ordering is generated so that a lattice plane of a first compound and a lattice plane of a second compound are alternately stacked one by one to constitute the layer.
Claim 3
Dependent Claim
31 words
A semiconductor laser device according to claim 1, further comprising a first optical waveguide layer and a second optical waveguide layer so as to sandwich the strained quantum well structure therebetween.
Claim 4
Dependent Claim
16 words
A semiconductor laser device according to claim 1, wherein the semiconductor substrate is composed of InP.
Claim 5
Dependent Claim
64 words
A strained quantum well crystal comprising: a semiconductor crystal; and an InGaAsP crystal having a lattice constant different from a lattice constant of the semiconductor crystal, wherein an atomic ordering is generated in the InGaAsP crystal so that a lattice plane of a first compound and a lattice plane of a second compound are alternately stacked one by one to constitute the InGaAsP crystal.
Claim 6
Dependent Claim
64 words
A strained quantum well crystal comprising: a semiconductor crystal; and an InGaAsP crystal having a lattice constant different from a lattice constant of the semiconductor crystal, wherein an atomic ordering is generated in the InGaAsP crystal so that a lattice plane of a first compound and a lattice plane of a second compound are alternately stacked one by one to constitute the InGaAsP crystal.
References Cited (Backward Citations)
US5408487A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-07-28 | 2001-01-27 | 2001-07-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-07-28 | 2005-01-27 | 2005-07-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-07-28 | 2009-01-27 | 2009-07-29 | $7700.00 | Window Closed / Lapsed |