Patent US5652465A successfully refreshed from Google Patents.
US5652465A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having dummy patterns and an upper insulating layer having cavities
Assignee: Fujitsu Ltd
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Filing: 1995-10-18
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Granted: 1997-07-29
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Expires: 2015-10-18
Abstract
Abstract A semiconductor device comprises a plurality of wiring formed on a lower insulating film to be spaced apart from each other, dummy patterns formed on the lower insulating layer between the plurality of wiring and spaced apart from each other, and an upper insulating layer formed to cover the plurality of wiring and the dummy patterns and having cavities formed in regions between the plurality of wiring and the dummy patterns.
Inventors
- 👤 Yukio Hosoda
- 👤 Masaaki Ichikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 11:51
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/072; H10W20/40; H10W20/45; H10W20/46; H10W20/495
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
114 words
A semiconductor device comprising: a semiconductor substrate; a first insulating layer formed on the semiconductor substrate; a first and a second wiring formed on the insulating layer, said first and second wiring being spaced apart from each other; formed on the insulating layer, said first and second wiring being spaced apart from each other; a dummy pattern formed on the insulating layer between the first and the second wiring; and a second insulating layer formed on the first insulating layer to cover the first wiring, the second wiring, and the dummy pattern, said second insulating layer having a cavity embedded therein and shielded thereby between said first or second wiring and said dummy pattern.
Claim 2
Dependent Claim
114 words
A semiconductor device comprising: a semiconductor substrate; a first insulating layer formed on the semiconductor substrate; a first and a second wiring formed on the insulating layer, said first and second wiring being spaced apart from each other; formed on the insulating layer, said first and second wiring being spaced apart from each other; a dummy pattern formed on the insulating layer between the first and the second wiring; and a second insulating layer formed on the first insulating layer to cover the first wiring, the second wiring, and the dummy pattern, said second insulating layer having a cavity embedded therein and shielded thereby between said first or second wiring and said dummy pattern.
Claim 3
Dependent Claim
15 words
A semiconductor device according to claim 1, wherein said cavity is filled with inactive gas.
Claim 4
Dependent Claim
15 words
A semiconductor device according to claim 2, wherein said inactive gas comprises argon or nitrogen.
Claim 5
Dependent Claim
27 words
A semiconductor device according to claim 1, wherein said cavity is filled with a gas which is an atmospheric gas used to form the second insulating layer.
Claim 6
Dependent Claim
29 words
A semiconductor device according to claim 1, further comprising a guard pattern formed on the first insulating layer to surround said first and second wiring and said dummy pattern.
Claim 7
Dependent Claim
33 words
A semiconductor device according to claim 1, wherein a plurality of said dummy patterns are formed between said first and second wiring, said plurality of dummy patterns being spaced apart from each other.
Claim 8
Dependent Claim
43 words
A semiconductor device according to claim 6, further comprising a guard pattern formed on the first insulating layer, said guard pattern being formed adjacent to ends of said first and second wiring and an outermost dummy pattern of said plurality of dummy patterns.
Claim 9
Dependent Claim
32 words
A semiconductor device according to claim 7, wherein said guard pattern is formed to surround an area in which said first and second wiring and said plurality of dummy patterns are formed.
Claim 10
Dependent Claim
19 words
A semiconductor device according to claim 5, wherein said second insulating layer is formed to cover the guard pattern.
Claim 11
Dependent Claim
19 words
A semiconductor device according to claim 7, wherein said second insulating layer is formed to cover the guard pattern.
References Cited (Backward Citations)
JPS5469393A
Cited
JPS57205886A
Cited
JPS63211739A
Cited
JPS63236319A
Cited
US5293503A
Cited
US5430325A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-07-28 | 2001-01-27 | 2001-07-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-07-28 | 2005-01-27 | 2005-07-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-07-28 | 2009-01-27 | 2009-07-29 | $7700.00 | Window Closed / Lapsed |