US5652438A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Light-emitting semiconductor device using group III nitride compound
Assignee: Toyoda Gosei Co Ltd
•
Filing: 1995-07-19
•
Granted: 1997-07-29
•
Expires: 2015-07-19
Abstract
Abstract A light-emitting semiconductor device (10) consecutively has a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n + -layer (3) of high carrier (n-type) concentration, a Si-doped (Al X2 Ga 1-x2 ) y2 In 1-y2 N n + -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al x1 Ga 1-x1 ) y1 In 1-y1 N emission layer (5), and a Mg-doped (Al x2 Ga 1-x2 ) y2 In 1-y2 N p-layer (6). The AlN buffer layer (2) has a 500 Å thickness. The GaN n + -layer (3) is about 2.0 μm thick and has a 2×10 18 /cm 3 electron concentration. The n + -layer (4) is about 2.0 μm thick and has a 2×10 18 /cm 3 electron concentration. The emission layer (5) is about 0.5 μm thick. The p-layer 6 is about 1.0 μm thick and has a 2×10 17 /cm 3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n + -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). Lead lines (21, 22) are connected with the electrodes (7, 8) by a wedge bonding method to desirably reduce the surface area of the electrodes on the light-emitting side of the device upon which the electrodes are situated to thereby increase light emission from the device.
Inventors
- 👤 Michinari Sassa
- 👤 Makoto Tamaki
- 👤 Masayoshi Koike
- 👤 Naoki Shibata
- 👤 Masami Yamada
- 👤 Takahide Oshio
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 00:55
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/831; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/8252; H10H20/8312; H10H20/832; H10W; H10W72/00; H10W72/50; H10W72/531; H10W72/536
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
196 words
A light-emitting semiconductor device comprising: an n-layer having n-type conduction of a Group III nitride compound semiconductor satisfying a first formula Al x3 Ga y3 In 1-x3-y3 N, where 0<x3<1, 0<y3<1, and 0<x3+y3<1; an emission layer of a Group III nitride compound semiconductor satisfying a third formula Al x2 Ga y2 In 1-x2-y2 N, where 0<x2<1, 0<y2<1, and 0<x2+y2<1; a p-layer having p-type conduction of a Group III nitride compound semiconductor satisfying a second formula Al x1 Ga y1 In 1-x1-y1 N, where 0<x1<1, 0<y1<1, and 0<x1+y1<1; a first electrode electrically contacting said p-layer, having a small stripe shape, and being formed on a first corner of a light-emitting side of said light-emitting semiconductor device; and a second electrode electrically contacting said n-layer, having a small stripe shape, and being formed on a second corner across from said first corner of said light-emitting side of said light-emitting semiconductor device; a first lead wire wedge-bonded to said first electrode; and a second lead wire wedge-bonded to said second electrode; a junction structure of said n-layer, said p-layer, and said emission layer being any one of a homo-junction structure, a single hetero-junction structure, and a double hetero-junction structure.
Claim 2
Dependent Claim
196 words
A light-emitting semiconductor device comprising: an n-layer having n-type conduction of a Group III nitride compound semiconductor satisfying a first formula Al x3 Ga y3 In 1-x3-y3 N, where 0<x3<1, 0<y3<1, and 0<x3+y3<1; an emission layer of a Group III nitride compound semiconductor satisfying a third formula Al x2 Ga y2 In 1-x2-y2 N, where 0<x2<1, 0<y2<1, and 0<x2+y2<1; a p-layer having p-type conduction of a Group III nitride compound semiconductor satisfying a second formula Al x1 Ga y1 In 1-x1-y1 N, where 0<x1<1, 0<y1<1, and 0<x1+y1<1; a first electrode electrically contacting said p-layer, having a small stripe shape, and being formed on a first corner of a light-emitting side of said light-emitting semiconductor device; and a second electrode electrically contacting said n-layer, having a small stripe shape, and being formed on a second corner across from said first corner of said light-emitting side of said light-emitting semiconductor device; a first lead wire wedge-bonded to said first electrode; and a second lead wire wedge-bonded to said second electrode; a junction structure of said n-layer, said p-layer, and said emission layer being any one of a homo-junction structure, a single hetero-junction structure, and a double hetero-junction structure.
Claim 3
Dependent Claim
54 words
A light-emitting device according to claim 1, wherein: said light-emitting side of said light-emitting semiconductor device is formed by said p-layer; and a first portion of said p-layer where said second electrode is formed is electrically insulated by a groove from a second portion of said p-layer where light from said p-layer is output.
Claim 4
Dependent Claim
38 words
A light-emitting device according to claim 1, wherein said light-emitting side of said light-emitting semiconductor device comprises: a portion where light from said p-layer is output; and a portion of said n-layer having said emission layer removed therefrom.
Claim 5
Dependent Claim
43 words
A light-emitting device according to claim 1, wherein: said first lead wire and said second lead wire are wedge-bonded respectively to said first electrode and said second electrode in parallel with each other and to respective cleaved sides of said light-emitting semiconductor device.
Claim 6
Dependent Claim
23 words
A light-emitting device according to claim 1, wherein: a plane of said light-emitting side of said light-emitting semiconductor device has a square shape.
Claim 7
Dependent Claim
143 words
A light-emitting semiconductor device comprising: a substrate layer; a first conduction layer formed on said substrate layer; an emission layer of a Group III nitride compound semiconductor formed on said first conduction layer; a second conduction layer formed on said emission layer, said second conduction layer formed on a light-emitting side of said light-emitting semiconductor device; a first electrode in electrical contact with a first corner portion of said second conduction layer, said first electrode having a width significantly smaller than a length of said first electrode; a first lead wire wedge-bonded to said first electrode; a second electrode in electrical contact with a second corner portion different from said first corner portion of said second conduction layer, said second electrode having a width significantly smaller than a length of said second electrode; and a second lead wire wedge-bonded to said second electrode.
Claim 8
Dependent Claim
143 words
A light-emitting semiconductor device comprising: a substrate layer; a first conduction layer formed on said substrate layer; an emission layer of a Group III nitride compound semiconductor formed on said first conduction layer; a second conduction layer formed on said emission layer, said second conduction layer formed on a light-emitting side of said light-emitting semiconductor device; a first electrode in electrical contact with a first corner portion of said second conduction layer, said first electrode having a width significantly smaller than a length of said first electrode; a first lead wire wedge-bonded to said first electrode; a second electrode in electrical contact with a second corner portion different from said first corner portion of said second conduction layer, said second electrode having a width significantly smaller than a length of said second electrode; and a second lead wire wedge-bonded to said second electrode.
Claim 9
Dependent Claim
25 words
A light-emitting semiconductor device according to claim 6, wherein: said first conduction layer, said emission layer, and said second conduction layer form a homo-junction structure.
Claim 10
Dependent Claim
26 words
A light-emitting semiconductor device according to claim 6, wherein: said first conduction layer, said emission layer, and said second conduction layer form a single hereto-junction structure.
Claim 11
Dependent Claim
26 words
A light-emitting semiconductor device according to claim 6, wherein: said first conduction layer, said emission layer, and said second conduction layer form a double hetero-junction structure.
Claim 12
Dependent Claim
53 words
A light-emitting semiconductor device according to claim 6, wherein: a conduction type of one of said first conduction layer and said second conduction layer is an n-type conduction and is formed of a Group III nitride compound semiconductor satisfying a formula Al x3 Ga y3 In 1-x3-y3 N, where 0<x3<1, 0<y3<1, and 0<x3+y3<1.
Claim 13
Dependent Claim
53 words
A light-emitting semiconductor device according to claim 6, wherein: a conduction type of one of said first conduction layer and said second conduction layer is a p-type conduction and is formed of a Group III nitride compound semiconductor satisfying a formula Al x1 Ga y1 In 1-x1-y1 N, where 0<x1<1, 0<y1<1, and 0<x1+y1<1.
Claim 14
Dependent Claim
54 words
A light-emitting semiconductor device according to claim 11, wherein: a conduction type of the other of said first conduction layer and said second conduction layer is a p-type conduction and is formed of a Group III nitride compound semiconductor satisfying a formula Al x1 Ga y1 In 1-x1-y1 N, where 0<x1<1, 0<y1<1, and 0<x1+y1<1.
Claim 15
Dependent Claim
30 words
A light-emitting semiconductor device according to claim 6, wherein: a compound of said emission layer satisfies a formula Al x2 Ga y2 In 1-x2-y2 N, where 0<2<1, 0<y2<1, and 0<x2+y2<1.
Claim 16
Dependent Claim
30 words
A light-emitting semiconductor device according to claim 12, wherein: a compound of said emission layer satisfies a formula Al x2 Ga y2 In 1-x2-y2 N, where 0<x2<1, 0<y2<1, and 0<x2+y2<1.
Claim 17
Dependent Claim
19 words
A light-emitting semiconductor device according to claim 6, wherein: said lead lines are one of gold, silver and copper.
Claim 18
Dependent Claim
23 words
A light-emitting semiconductor device according to claim 6, wherein: said lead lines are an alloy of any two of gold, silver and copper.
Claim 19
Dependent Claim
19 words
A light-emitting semiconductor device according to claim 6, wherein: said emission layer contains impurity concentrations of Cd and Si.
Claim 20
Dependent Claim
28 words
A light-emitting semiconductor device according to claim 17, wherein: said impurity concentration of Si is smaller than said impurity concentration of Cd by between 10 to 50 percent.
Claim 21
Dependent Claim
32 words
A light-emitting semiconductor device according to claim 18, wherein: said impurity concentrations of Cd and Si are within a range of 1×10 17 /cm -3 to 1×10 20 /cm 3 , respectively.
Claim 22
Dependent Claim
41 words
A light-emitting semiconductor device according to claim 14, wherein: composition ratios of Al, Ga and In in the first conduction layer, the emission layer, and the second conduction layer substantially match a lattice constant of GaN in said first conduction layer.
Claim 23
Dependent Claim
19 words
A light-emitting semiconductor device according to claim 6, wherein: said emission layer contains impurity concentrations of Zn and Si.
Claim 24
Dependent Claim
24 words
A light-emitting semiconductor device according to claim 21, wherein: said impurity concentration of Si is between one and one-tenth said impurity concentration of Zn.
Claim 25
Dependent Claim
32 words
A light-emitting semiconductor device according to claim 21, wherein: said impurity concentrations of Cd and Zn are within a range of 1×10 17 /cm 3 to 1×10 20 /cm 3 , respectively.
Claim 26
Dependent Claim
32 words
A light-emitting semiconductor device according to claim 21, wherein: said impurity concentrations of Cd and Zn are within a range of 1×10 18 /cm 3 to 1×10 19 /cm 3 , respectively.
Claim 27
Dependent Claim
44 words
A light-emitting semiconductor device according to claim 6, wherein said emission layer contains: acceptor impurities selected from at least one of cadmium, beryllium, magnesium, zinc and mercury; donor impurities selected from at least one of silicon, carbon, germanium, tin, lead, sulfur, selenium and tellurium.
Claim 28
Dependent Claim
130 words
A light-emitting semiconductor device comprising: a light-emitting semiconductor device including a Group III nitride light emitting surface; a first electrode in electrical contact with a first corner portion of said light emitting surface of said semiconductor device, said first electrode having a stripe shape with a width of said first electrode being significantly smaller than a length of said first electrode; a first lead wire wedge-bonded to said first electrode; a second electrode in electrical contact with a second corner portion different from said first corner portion of said light emitting surface of said semiconductor device, said second electrode having a stripe shape with a width of said second electrode being significantly smaller than a length of said second electrode; and a second lead wire wedge-bonded to said second electrode.
Claim 29
Dependent Claim
130 words
A light-emitting semiconductor device comprising: a light-emitting semiconductor device including a Group III nitride light emitting surface; a first electrode in electrical contact with a first corner portion of said light emitting surface of said semiconductor device, said first electrode having a stripe shape with a width of said first electrode being significantly smaller than a length of said first electrode; a first lead wire wedge-bonded to said first electrode; a second electrode in electrical contact with a second corner portion different from said first corner portion of said light emitting surface of said semiconductor device, said second electrode having a stripe shape with a width of said second electrode being significantly smaller than a length of said second electrode; and a second lead wire wedge-bonded to said second electrode.
References Cited (Backward Citations)
US5281830A
Cited
JPH04321279A
Cited
JPH05211347A
Cited
US5323952A
Cited
US5369289A
Cited
US5408120A
Cited
US5530282A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-07-28 | 2001-01-27 | 2001-07-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-07-28 | 2005-01-27 | 2005-07-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-07-28 | 2009-01-27 | 2009-07-29 | $7700.00 | Window Closed / Lapsed |