US5652036A — Information recording medium and method of manufa…

Claim 1

Independent Claim 115 words

An information recording medium comprising: a substrate; a phase-change type recording layer capable of storing information therein through a phase-change of a portion thereof upon being irradiated by a light beam; a dielectric protecting layer interposed between the substrate and the recording layer; and a light-absorptive protecting layer comprising a dielectric material that does not absorb light having a wavelength equal to that of the light beam which irradiates the recording layer and at least one material that absorbs light having a wavelength equal to that of the light beam which irradiates the recording layer and which is selected from metals, semimetals and semiconductor materials and interposed between the substrate and the dielectric protecting layer.

Claim 2

Dependent Claim 115 words

An information recording medium comprising: a substrate; a phase-change type recording layer capable of storing information therein through a phase-change of a portion thereof upon being irradiated by a light beam; a dielectric protecting layer interposed between the substrate and the recording layer; and a light-absorptive protecting layer comprising a dielectric material that does not absorb light having a wavelength equal to that of the light beam which irradiates the recording layer and at least one material that absorbs light having a wavelength equal to that of the light beam which irradiates the recording layer and which is selected from metals, semimetals and semiconductor materials and interposed between the substrate and the dielectric protecting layer.

Claim 3

Dependent Claim 52 words

The information recording medium according to claim 1, wherein said dielectric material of the light-absorptive protecting layer is selected from the group consisting of SiO 2 , SiO, AlN, Al 2 O 3 , ZrO 2 , TiO 2 , Ta 2 O 3 , ZnS, SiC, SiN and a mixture thereof.

Claim 4

Dependent Claim 153 words

The information recording medium according to claim 1, wherein said at least one material selected from metals, semimetals and semiconductor materials is selected from the group consisting of a Group IIIa element in the periodic table such as Y; a Group IVa element such as Ti or Zr; a Group Va element such as V, Nb or Ta; a Group VIa element such as Cr, Mo or W; a Group VIIa element such as Mn; a Group VIII element such as Fe, Ru, Co, Rh, Ir, Ni, Pd or Pt; a Group Ib element such as Cu, Ag or Au; a Group IIb element such as Zn or Cd; a Group IIIb element such as B, Al or In; a Group IVb element such as C, Si, Ge, Sn or Pb; a Group Vb element such as Sb or Bi; a Group VIb element such as Se or Te; and a mixture thereof.

Claim 5

Dependent Claim 46 words

The information recording medium according to claim 1, wherein said at least one material selected from metals, semimetals and semiconductor materials has a higher melting point than a material of said recording layer and hardly forms a solid solution with the material of said recording layer.

Claim 6

Dependent Claim 40 words

The information recording medium according to claim 4, wherein said at least one material selected from metals, semimetals and semiconductor materials has a melting point at least three times (based on Celsius) higher than a material of said recording layer.

Claim 7

Dependent Claim 44 words

The information recording medium according to claim 1, wherein a mixing amount of said material selected from metals, semimetals and semiconductor materials is determined so that the light-absorption coefficient of the light absorptive protecting layer falls with a range of between 0.01 and 9.0.

Claim 8

Dependent Claim 128 words

An information recording medium comprising: a substrate; a phase-change type recording layer capable of storing information therein through a phase-change of a portion thereof upon being irradiated by a light beam; a first dielectric protecting layer interposed between the substrate and the recording layer; a second dielectric protecting layer formed on the recording layer; and a light-absorptive protecting layer comprising a dielectric material that does not absorb light having a wavelength equal to that of the light beam which irradiates the recording layer and at least one material that absorbs light having a wavelength equal to that of the light beam which irradiates the recording layer and which is selected from metals, semimetals and semiconductor materials and interposed between the recording layer and the first dielectric protecting layer.

Claim 9

Dependent Claim 128 words

An information recording medium comprising: a substrate; a phase-change type recording layer capable of storing information therein through a phase-change of a portion thereof upon being irradiated by a light beam; a first dielectric protecting layer interposed between the substrate and the recording layer; a second dielectric protecting layer formed on the recording layer; and a light-absorptive protecting layer comprising a dielectric material that does not absorb light having a wavelength equal to that of the light beam which irradiates the recording layer and at least one material that absorbs light having a wavelength equal to that of the light beam which irradiates the recording layer and which is selected from metals, semimetals and semiconductor materials and interposed between the recording layer and the first dielectric protecting layer.

Claim 10

Dependent Claim 46 words

The information recording medium according to claim 7, wherein said at least one material selected from metals, semimetals and semiconductor materials has a higher melting point than a material of said recording layer and hardly forms a solid solution with the material of said recording layer.

Claim 11

Dependent Claim 40 words

The information recording medium according to claim 8, wherein said at least one material selected from metals, semimetals and semiconductor materials has a melting point at least three times (based on Celsius) higher than a material of said recording layer.

Claim 12

Dependent Claim 51 words

The information recording medium according to claim 7, wherein said dielectric material of the light-absorptive protecting layer is selected from the group consisting of SiO 2 , SiO, AlN, Al 2 O 3 , ZrO 2 , TiO 2 , Ta 2 O 3 , ZnS, SiC,SiN and a mixture thereof.

Claim 13

Dependent Claim 153 words

The information recording medium according to claim 7, wherein said at least one material selected from metals, semimetals and semiconductor materials is selected from the group consisting of a Group IIIa element in the periodic table such as Y; a Group IVa element such as Ti or Zr; a Group Va element such as V, Nb or Ta; a Group VIa element such as Cr, Mo or W; a Group VIIa element such as Mn; a Group VIII element such as Fe, Ru, Co, Rh, Ir, Ni, Pd or Pt; a Group Ib element such as Cu, Ag or Au; a Group IIb element such as Zn or Cd; a Group IIIb element such as B, Al or In; a Group IVb element such as C, Si, Ge, Sn or Pb; a Group Vb element such as Sb or Bi; a Group VIb element such as Se or Te; and a mixture thereof.

Claim 14

Dependent Claim 44 words

The information recording medium according to claim 7, wherein a mixing amount of said material selected from metals, semimetals and semiconductor materials is determined so that the light-absorption coefficient of the light absorptive protecting layer falls with a range of between 0.01 and 9.0.

Claim 15

Dependent Claim 111 words

An information recording medium comprising: a substrate; a phase-change type recording layer capable of storing information therein through a phase-change of a portion thereof upon being irradiated by a light beam; a dielectric protecting layer formed on the recording layer; and a light-absorptive protecting layer comprising a dielectric material that does not absorb light having a wavelength equal to that of the light beam which irradiates the recording layer and at least one material that absorbs light having a wavelength equal to that of the light beam which irradiates the recording layer and which is selected from metals, semimetals and semiconductor materials and interposed between the substrate and the recording layer.

Claim 16

Dependent Claim 111 words

An information recording medium comprising: a substrate; a phase-change type recording layer capable of storing information therein through a phase-change of a portion thereof upon being irradiated by a light beam; a dielectric protecting layer formed on the recording layer; and a light-absorptive protecting layer comprising a dielectric material that does not absorb light having a wavelength equal to that of the light beam which irradiates the recording layer and at least one material that absorbs light having a wavelength equal to that of the light beam which irradiates the recording layer and which is selected from metals, semimetals and semiconductor materials and interposed between the substrate and the recording layer.

Claim 17

Dependent Claim 46 words

The information recording medium according to claim 13, wherein said at least one material selected from metals, semimetals and semiconductor materials has a higher me/ting point than a material of said recording layer and hardly forms a solid solution with the material of said recording layer.

Claim 18

Dependent Claim 40 words

The information recording medium according to claim 14, wherein said at least one material selected from metals, semimetals and semiconductor materials has a melting point at least three times (based on Celsius) higher than a material of said recording layer.

Claim 19

Dependent Claim 51 words

The information recording medium according to claim 13, wherein said dielectric material of the light-absorptive protecting layer is selected from the group consisting of SiO 2 , SiO, AlN, Al 2 O 3 , ZrO 2 , TiO 2 , Ta 2 O 3 , ZnS, SiC,SiN and a mixture thereof.

Claim 20

Dependent Claim 153 words

The information recording medium according to claim 13, wherein said at least one material selected from metals, semimetals and semiconductor materials is selected from the group consisting of a Group IIIa element in the periodic table such as Y; a Group IVa element such as Ti or Zr; a Group Va element such as V, Nb or Ta; a Group VIa element such as Cr, Mo or W; a Group VIIa element such as Mn; a Group VIII element such as Fe, Ru, Co, Rh, Ir, Ni, Pd or Pt; a Group Ib element such as Cu, Ag or Au; a Group IIb element such as Zn or Cd; a Group IIIb element such as B, Al or In; a Group IVb element such as C, Si, Ge, Sn or Pb; a Group Vb element such as Sb or Bi; a Group VIb element such as Se or Te; and a mixture thereof.

Claim 21

Dependent Claim 44 words

The information recording medium according to claim 13, wherein a mixing amount of said material selected from metals, semimetals and semiconductor materials is determined so that the light-absorption coefficient of the light absorptive protecting layer falls with a range of between 0.01 and 9.0.

Claim 22

Dependent Claim 116 words

An information recording medium comprising: a substrate; a phase-change type recording layer capable of storing information therein through a phase-change of a portion thereof upon being irradiated by a light beam; a dielectric protecting layer interposed between the substrate and the recording layer; and a light-absorptive protecting layer comprising a dielectric material that does not absorb light having a wavelength equal to that of the light beam which irradiates the recording layer and at least one material that absorbs light having a wavelength equal to that of the light beam which irradiates the recording layer and which is selected from metals, semimetals and semiconductor materials and interposed between the dielectric protecting layer and the recording layer.

Claim 23

Dependent Claim 116 words

An information recording medium comprising: a substrate; a phase-change type recording layer capable of storing information therein through a phase-change of a portion thereof upon being irradiated by a light beam; a dielectric protecting layer interposed between the substrate and the recording layer; and a light-absorptive protecting layer comprising a dielectric material that does not absorb light having a wavelength equal to that of the light beam which irradiates the recording layer and at least one material that absorbs light having a wavelength equal to that of the light beam which irradiates the recording layer and which is selected from metals, semimetals and semiconductor materials and interposed between the dielectric protecting layer and the recording layer.

Claim 24

Dependent Claim 46 words

The information recording medium according to claim 19, wherein said at least one material selected from metals, semimetals and semiconductor materials has a higher melting point than a material of said recording layer and hardly forms a solid solution with the material of said recording layer.

Claim 25

Dependent Claim 40 words

The information recording medium according to claim 20, wherein said at least one material selected from metals, semimetals and semiconductor materials has a melting point at least three times (based on Celsius) higher than a material of said recording layer.

Claim 26

Dependent Claim 51 words

The information recording medium according to claim 19, wherein said dielectric material of the light-absorptive protecting layer is selected from the group consisting of SiO 2 , SiO, AlN, Al 2 O 3 , ZrO 2 , TiO 2 , Ta 2 O 3 , ZnS, SiC,SiN and a mixture thereof.

Claim 27

Dependent Claim 153 words

The information recording medium according to claim 19, wherein said at least one material selected from metals, semimetals and semiconductor materials is selected from the group consisting of a Group IIIa element in the periodic table such as Y; a Group IVa element such as Ti or Zr; a Group Va element such as V, Nb or Ta; a Group VIa element Such as Cr, Mo or W; a Group VIIa element such as Mn; a Group VIII element such as Fe, Ru, Co, Rh, Ir, Ni, Pd or Pt; a Group Ib element such as Cu, Ag or Au; a Group IIb element such as Zn or Cd; a Group IIIb element such as B, Al or In; a Group IVb element such as C, Si, Ge, Sn or Pb; a Group Vb element such as Sb or Bi; a Group VIb element such as Se or Te; and a mixture thereof.

Claim 28

Dependent Claim 44 words

The information recording medium according to claim 19, wherein a mixing amount of said material selected from metals, semimetals and semiconductor materials is determined so that the light-absorption coefficient of the light absorptive protecting layer falls with a range of between 0.01 and 9.0.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2000-07-28	2001-01-27	2001-07-29	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2004-07-28	2005-01-27	2005-07-29	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2008-07-28	2009-01-27	2009-07-29	$7700.00	Window Closed / Lapsed

Information recording medium and method of manufacturing the same

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