Patent US5650667A successfully refreshed from Google Patents.
US5650667A
Expired / Lapsed
US
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Process of forming conductive bumps on the electrodes of semiconductor chips using lapping and the bumps thereby created
Assignee: National Semiconductor Corp
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Filing: 1995-10-30
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Granted: 1997-07-22
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Expires: 2015-10-30
Abstract
Abstract A method and structure for electrical contact bumps on a semiconductor die. Contact bumps are formed on the electrode contacts of an integrated circuit, then the surface of the semiconductor is coated with a protective polymer layer, and the layer is wafer lapped to produce contact bumps of uniform height.
Inventors
- 👤 Shiann-Ming Liou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 20:16
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/0198; H10W74/00; H10W74/01; H10W72/012; H10W72/01221; H10W72/01225; H10W72/013; H10W72/01331; H10W72/071; H10W72/072; H10W72/07251; H10W72/20; H10W72/251; H10W72/252; H10W72/50; H10W72/551; H10W72/552; H10W72/5524; H10W74/10; H10W74/15
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
56 words
A method for forming a bump on an electrode formed on a surface of a semiconductor element, the method comprising the steps of: attaching a conductive structure to the electrode; coating the surface of the semiconductor containing the electrode to cover the conductive structure; and lapping the coating to expose a portion of the conductive structure.
Claim 2
Independent Claim
56 words
A method for forming a bump on an electrode formed on a surface of a semiconductor element, the method comprising the steps of: attaching a conductive structure to the electrode; coating the surface of the semiconductor containing the electrode to cover the conductive structure; and lapping the coating to expose a portion of the conductive structure.
Claim 3
Dependent Claim
12 words
The process of claim 1, wherein the conductive structure comprises a metal.
Claim 4
Dependent Claim
11 words
The process of claim 2, wherein the metal comprises Au (Gold).
Claim 5
Dependent Claim
11 words
The process of claim 2, wherein the metal comprises Cu (Copper).
Claim 6
Dependent Claim
12 words
The process of claim 2, wherein the metal comprises Sn--Pb (Tin-Lead) alloy.
Claim 7
Dependent Claim
12 words
The process of claim 1, wherein the coating material comprises a polymer.
Claim 8
Dependent Claim
19 words
The process of claim 1, wherein the conductive structure is attached to the electrode by means of wire bonding.
Claim 9
Dependent Claim
21 words
The process of claim 1, wherein the lapping is performed in a direction substantially parallel to the surface of the semiconductor.
Claim 10
Independent Claim
55 words
A method for forming a bump on an electrode formed on a surface of a semiconductor wafer element, the method comprising the steps of: attaching a conductive structure to the electrode; coating the surface of the semiconductor wafer element containing the electrode; lapping the coating over the semiconductor wafer element to cut the conductive structure.
Claim 11
Independent Claim
55 words
A method for forming a bump on an electrode formed on a surface of a semiconductor wafer element, the method comprising the steps of: attaching a conductive structure to the electrode; coating the surface of the semiconductor wafer element containing the electrode; lapping the coating over the semiconductor wafer element to cut the conductive structure.
Claim 12
Dependent Claim
12 words
The process of claim 9, wherein the conductive structure comprises a metal.
Claim 13
Dependent Claim
11 words
The process of claim 10, wherein the metal comprises Au (Gold).
Claim 14
Dependent Claim
11 words
The process of claim 10, wherein the metal comprises Cu (Copper).
Claim 15
Dependent Claim
12 words
The process of claim 10, wherein the metal comprises Sn--Pb (Tin-Lead) alloy.
Claim 16
Dependent Claim
12 words
The process of claim 9, wherein the coating material comprises a polymer.
Claim 17
Dependent Claim
19 words
The process of claim 9, wherein the conductive structure is attached to the electrode by means of wire bonding.
Claim 18
Dependent Claim
21 words
The process of claim 9, wherein the lapping is performed in a direction substantially parallel to the surface of the semiconductor.
Claim 19
Dependent Claim
95 words
A plurality of electrical contact bumps formed on an electrode pad formed on a semiconductor substrate, each bump comprising: a raised portion made of an electrically conductive material, the raised portion having a first surface that is attached to the electrode pad; and a protective coating formed on the semiconductor substrate surrounding the raised portion, such that a second surface of the raised portion remains exposed which is substantially parallel to the first surface; and wherein the second surface is substantially co-planar with the second surfaces of all other bumps formed on the semiconductor substrate.
Claim 20
Dependent Claim
95 words
A plurality of electrical contact bumps formed on an electrode pad formed on a semiconductor substrate, each bump comprising: a raised portion made of an electrically conductive material, the raised portion having a first surface that is attached to the electrode pad; and a protective coating formed on the semiconductor substrate surrounding the raised portion, such that a second surface of the raised portion remains exposed which is substantially parallel to the first surface; and wherein the second surface is substantially co-planar with the second surfaces of all other bumps formed on the semiconductor substrate.
Claim 21
Dependent Claim
14 words
The electrical contact bumps of claim 17, wherein the protective coating comprises a polymer.
Claim 22
Dependent Claim
14 words
The electrical contact bumps of claim 17, wherein the conductive material comprises Au (Gold).
Claim 23
Dependent Claim
14 words
The electrical contact bumps of claim 17, wherein the conductive material comprises Cu (Copper).
Claim 24
Dependent Claim
15 words
The electrical contact bumps of claim 17, wherein the conductive material is Sn--Pb (Tin-Lead) alloy.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-07-21 | 2001-01-20 | 2001-07-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-07-21 | 2005-01-20 | 2005-07-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-07-21 | 2009-01-20 | 2009-07-22 | $7700.00 | Window Closed / Lapsed |