Patent US5648686A successfully refreshed from Google Patents.
US5648686A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Connecting electrode portion in semiconductor device
Assignee: Toshiba Corp
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Filing: 1995-07-26
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Granted: 1997-07-15
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Expires: 2015-07-26
Abstract
Abstract An Al layer which serves as a lead-out electrode is formed on a semiconductor chip. An insulating layer is formed on the semiconductor chip and the Al layer. The insulating layer has an opening formed in that portion thereof which is located on the Al layer, thereby exposing a portion of the Al layer. A multi-level metal layer (barrier metal layer) is formed on the exposed portion of the Al layer and on that portion of the insulating layer which is located along the edge of the opening. A metallic nitride region is provided between a first-level metal layer in the multi-level metal layer and the insulating layer so as to be selectively formed at or under a peripheral portion of the first-level metal layer. A bump electrode is provided on the multi-level metal layer. The resultant semiconductor device is mounted on a circuit board by flip chip bonding, with the bump electrode interposed therebetween.
Inventors
- 👤 Naohiko Hirano
- 👤 Kazuhide Doi
- 👤 Masayuki Miura
- 👤 Takashi Okada
- 👤 Yoichi Hiruta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 20:41
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/90; H10W72/20; H10W72/251; H10W72/921; H10W72/923; H10W72/951; H10W72/952; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
158 words
A semiconductor device to be mounted on a circuit board by flip chip bonding, comprising: a semiconductor chip; an Al layer formed on the semiconductor chip and serving as a lead-out electrode; an insulating layer formed on the semiconductor chip and the Al layer and having an opening formed in that portion thereof which is located on the Al layer, thereby exposing a portion of the Al layer; a multi-level layer formed on the exposed portion of the Al layer and on that portion of the insulating layer which is located along the edge of the opening; and a metallic nitride layer provided between a first-level metal layer included in the multi-level metal layer and the insulating layer so as to be selectively formed on that portion of the insulating layer which is located along the edge of the opening; wherein at least a portion of said first-level metal layer is in direct contact with said Al layer.
Claim 2
Dependent Claim
158 words
A semiconductor device to be mounted on a circuit board by flip chip bonding, comprising: a semiconductor chip; an Al layer formed on the semiconductor chip and serving as a lead-out electrode; an insulating layer formed on the semiconductor chip and the Al layer and having an opening formed in that portion thereof which is located on the Al layer, thereby exposing a portion of the Al layer; a multi-level layer formed on the exposed portion of the Al layer and on that portion of the insulating layer which is located along the edge of the opening; and a metallic nitride layer provided between a first-level metal layer included in the multi-level metal layer and the insulating layer so as to be selectively formed on that portion of the insulating layer which is located along the edge of the opening; wherein at least a portion of said first-level metal layer is in direct contact with said Al layer.
Claim 3
Dependent Claim
22 words
The semiconductor device according to claim 1, wherein the metallic nitride layer extends to the side surfaces of the multi-level metal layer.
Claim 4
Dependent Claim
18 words
The semiconductor device according to claim 1, further comprising a bump electrode formed on the multi-level metal layer.
Claim 5
Dependent Claim
17 words
The semiconductor device according to claim 3, wherein the bump electrode is made of a low-melting-point metal.
Claim 6
Dependent Claim
52 words
The semiconductor device according to claim 4, wherein the low-melting-point metal is one of a solder alloy containing Pb and Sn as main components, and a solder alloy containing Pb and Sn as main components and at least one additive metal selected from the group consisting of Ag, Pd, Sb and Bi.
Claim 7
Dependent Claim
32 words
The semiconductor device according to claim 1, wherein the first-level metal layer is made of Ti, the metallic nitride layer is made of TiN, and the insulating layer is made of SixNy.
Claim 8
Dependent Claim
31 words
The semiconductor device according to claim 1, wherein the first-level metal layer is made of one selected from the group consisting of IV A-group, VI A-group and II B-group transition metals.
Claim 9
Dependent Claim
183 words
A semiconductor device to be mounted on a circuit board by flip chip bonding, comprising: a semiconductor chip; an Al layer formed on the semiconductor chip and serving as a lead-out electrode; an insulating layer formed on the semiconductor chip and the Al layer and having an opening formed in that portion thereof which is located on the Al layer, thereby exposing a portion of the Al layer; a multi-level layer comprised of a first-level metal layer and a second-level layer, and formed on the exposed portion of the Al layer and on that portion of the insulating layer which is located along the edge of the opening; a first metallic nitride layer provided between the first-level metal layer and the insulating layer so as to be selectively formed on that portion of the insulating layer which is located along the edge of the opening; and a second metallic nitride layer formed at least partially between the first-level metal layer and the second-level metal layer; wherein at least a portion of said first-level metal layer is in direct contact with said Al layer.
Claim 10
Dependent Claim
183 words
A semiconductor device to be mounted on a circuit board by flip chip bonding, comprising: a semiconductor chip; an Al layer formed on the semiconductor chip and serving as a lead-out electrode; an insulating layer formed on the semiconductor chip and the Al layer and having an opening formed in that portion thereof which is located on the Al layer, thereby exposing a portion of the Al layer; a multi-level layer comprised of a first-level metal layer and a second-level layer, and formed on the exposed portion of the Al layer and on that portion of the insulating layer which is located along the edge of the opening; a first metallic nitride layer provided between the first-level metal layer and the insulating layer so as to be selectively formed on that portion of the insulating layer which is located along the edge of the opening; and a second metallic nitride layer formed at least partially between the first-level metal layer and the second-level metal layer; wherein at least a portion of said first-level metal layer is in direct contact with said Al layer.
Claim 11
Dependent Claim
17 words
The semiconductor device according to claim 8, further comprising a bump electrode formed on the multi-level layer.
Claim 12
Dependent Claim
17 words
The semiconductor device according to claim 9, wherein the bump electrode is made of a low-melting-point metal.
Claim 13
Dependent Claim
52 words
The semiconductor device according to claim 10, wherein the low-melting-point metal is one of a solder alloy containing Pb and Sn as main components, and a solder alloy containing Pb and Sn as main components and at least one additive metal selected from the group consisting of Ag, Pd, Sb and Bi.
Claim 14
Dependent Claim
32 words
The semiconductor device according to claim 8, wherein the first-level metal layer is made of Ti, the metallic nitride region is made of TiN, and the insulating layer is made of SixNy.
Claim 15
Dependent Claim
31 words
The semiconductor device according to claim 8, wherein the first-level metal layer is made of one selected from the group consisting of IV A-group, VI A-group and II B-group transition metals.
Claim 16
Dependent Claim
30 words
The semiconductor device according to claim 8, wherein the second-level layer is made of one selected from the group consisting of VIII A-group, I B-group and II B-group transition metals.
Claim 17
Dependent Claim
191 words
A semiconductor device to be mounted on a circuit board by flip chip bonding, comprising: a semiconductor chip; an Al layer formed on the semiconductor chip and serving as a lead-out electrode; an insulating layer formed on the semiconductor chip and the Al layer and having an opening formed in that portion thereof which is located on the Al layer, thereby exposing a portion of the Al layer; a multi-level layer comprised of a first-level metal layer, a second-level layer and a third-level layer which are laminated in this order, and formed on the exposed portion of the Al layer and on that portion of the insulating layer which is located along the edge of the opening; a first metallic nitride layer provided between the first-level metal layer and the insulating layer so as to be selectively formed on that portion of the insulating layer which is located along the edge of the opening; and a second metallic nitride layer formed at least partially between the first-level metal layer and the second-level layer; wherein at least a portion of said first-level metal layer is in direct contact with said Al layer.
Claim 18
Dependent Claim
191 words
A semiconductor device to be mounted on a circuit board by flip chip bonding, comprising: a semiconductor chip; an Al layer formed on the semiconductor chip and serving as a lead-out electrode; an insulating layer formed on the semiconductor chip and the Al layer and having an opening formed in that portion thereof which is located on the Al layer, thereby exposing a portion of the Al layer; a multi-level layer comprised of a first-level metal layer, a second-level layer and a third-level layer which are laminated in this order, and formed on the exposed portion of the Al layer and on that portion of the insulating layer which is located along the edge of the opening; a first metallic nitride layer provided between the first-level metal layer and the insulating layer so as to be selectively formed on that portion of the insulating layer which is located along the edge of the opening; and a second metallic nitride layer formed at least partially between the first-level metal layer and the second-level layer; wherein at least a portion of said first-level metal layer is in direct contact with said Al layer.
Claim 19
Dependent Claim
17 words
The semiconductor device according to claim 15, further comprising a bump electrode formed on the multi-level layer.
Claim 20
Dependent Claim
17 words
The semiconductor device according to claim 16, wherein the bump electrode is made of a low-melting-point metal.
Claim 21
Dependent Claim
52 words
The semiconductor device according to claim 17, wherein the low-melting-point metal is one of a solder alloy containing Pb and Sn as main components, and a solder alloy containing Pb and Sn as main components and at least one additive metal selected from the group consisting of Ag, Pd, Sb and Bi.
Claim 22
Dependent Claim
33 words
The semiconductor device according to claim 15, wherein the first-level metal layer is made of Ti, the first metallic nitride layer is made of TiN, and the insulating layer is made of SixNy.
Claim 23
Dependent Claim
31 words
The semiconductor device according to claim 15, wherein the first-level metal layer is made of one selected from the group consisting of IV A-group, VI A-group and II B-group transition metals.
Claim 24
Dependent Claim
30 words
The semiconductor device according to claim 15, wherein the second-level layer is made of one selected from the group consisting of VIII A-group, I B-group and II B-group transition metals.
Claim 25
Dependent Claim
28 words
The semiconductor device according to claim 15, wherein the third-level layer is made of one selected from the group consisting of Pd, Au, Pt, Ag and their alloys.
References Cited (Backward Citations)
JPS6349377A
Cited
JPH0418760A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-07-14 | 2001-01-13 | 2001-07-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-07-14 | 2005-01-13 | 2005-07-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-07-14 | 2009-01-13 | 2009-07-15 | $7700.00 | Window Closed / Lapsed |