Semiconductor device

Claim 2

A semiconductor device comprising: a ceramic plate having first and second major surfaces and an opening having corners; a heat sink having first and second major surfaces and joined by a bonding agent layer to the ceramic plate to cover the opening of the ceramic plate, the bonding agent layer being formed between the first major surface of the heat sink and an inner edge portion of the opening on the second major surface side of the ceramic plate; a semiconductor element mounted on the first major surface of the heat sink and located in the opening of the ceramic plate; and a cap mounted on the first major surface of the ceramic plate to cover the semiconductor element; wherein each of the corners of the opening in the ceramic plate has a curvature radius R of 2.3 mm.

Claim 3

The semiconductor device according to claim 1, wherein the first major surface of the heat sink covers the opening of the ceramic plate and provides a projection having corners jutted into the opening of the ceramic plate, the corners of the projection having a curvature radius smaller than the radius R.

Claim 4

The semiconductor device according to claim 1, further including a step provided in an inner edge portion of the opening in the ceramics plate.

Claim 5

The semiconductor device according to claim 3, wherein a clearance is provided between an inner side wall of the opening in the ceramics plate and the projection of the first major surface side of the heat sink jutted into the opening of the ceramics plate.

Claim 6

The semiconductor device according to claim 3, wherein the first major surface of the heat sink covers the opening of the ceramic plate and provides a projection jutted into the opening of the ceramic plate.

Claim 7

The semiconductor device according to claim 4, further comprising connection pins provided on an outer marginal portion of the first major surface of the ceramics plate and adapted to be electrically connected to the semiconductor element.

Claim 8

The semiconductor device according to claim 5, further comprising a heat radiating fin unit mounted on the second major surface of the heat sink.

Claim 9

The semiconductor device according to claim 5, wherein a clearance is provided between an inner side wall of the opening in the ceramics plate and the projection of the first major surface side of the heat sink jutted into the opening of the ceramics plate.

Claim 10

The semiconductor device according to claim 8, further comprising connection pins provided on an outer marginal portion of the first major surface of the ceramics plate and adapted to be electrically connected to the semiconductor element.

Claim 11

The semiconductor device according to claim 9, further comprising a heat radiating fin unit mounted on the second major surface of the heat sink.

Claim 12

A semiconductor device comprising: a ceramic plate having first and second major surfaces and an opening having corners; a heat sink having first and second major surfaces and joined by a bonding agent layer to the ceramic plate to cover the opening of the ceramic plate, the bonding agent layer being formed between the first major surface of the heat sink and an inner edge portion of the opening on the second major surface side of the ceramic plate; a semiconductor element mounted on the first major surface of the heat sink and located in the opening of the ceramic plate; and a cap mounted on the first major surface of the ceramic plate to cover the semiconductor element; wherein each of the corners of the opening in the ceramic plate has a recessed semi-circular area having a curvature radius R equal to 1.0 mm, the semi-circular area being recessed toward an outer side of the ceramic plate.

Claim 13

A semiconductor device comprising: a ceramic plate having first and second major surfaces and an opening having corners; a heat sink having first and second major surfaces and joined by a bonding agent layer to the ceramic plate to cover the opening of the ceramic plate, the bonding agent layer being formed between the first major surface of the heat sink and an inner edge portion of the opening on the second major surface side of the ceramic plate; a semiconductor element mounted on the first major surface of the heat sink and located in the opening of the ceramic plate; and a cap mounted on the first major surface of the ceramic plate to cover the semiconductor element; wherein each of the corners of the opening in the ceramic plate has a recessed semi-circular area having a curvature radius R equal to 1.0 mm, the semi-circular area being recessed toward an outer side of the ceramic plate.

Claim 14

The semiconductor device according to claim 11, wherein the first major surface of the heat sink covers the opening of the ceramic plate and provides a projection jutted into the opening of the ceramic plate, the projection having a square surface with corners located in the respective corners of the opening.

Claim 15

The semiconductor device according to claim 11, further comprising connection pins provided on an outer marginal portion of the first major surface of the ceramic plate and adapted to be electrically connected to the semiconductor element.

Claim 16

The semiconductor device according to claim 11, wherein the corners of the opening in the ceramic plate is such that their planar configuration is part-elliptical.

Claim 17

The semiconductor device according to claim 12, wherein a clearance is provided between an inner side wall of the opening in the ceramics plate and the projection of the first major surface side of the heat sink jutted into the opening of the ceramics plate.

Claim 18

The semiconductor device according to claim 13, further comprising a heat radiating fin unit mounted on the second major surface of the heat sink.

Claim 19

A semiconductor device comprising: a ceramic plate having first and second major surfaces and an opening having corners defined by line extensions of sides of the opening intersecting at an angle; a heat sink having first and second major surfaces and joined by a bonding agent layer to the ceramic plate to cover the opening of the ceramic plate, the bonding agent layer being formed between the first major surface of the heat sink and an inner edge portion of the opening on the second major surface side of the ceramic plate; a semiconductor element mounted on the first major surface of the heat sink and located in the opening of the ceramic plate; and a cap mounted on the first major surface of the ceramic plate to cover the semiconductor element; the opening in the ceramic plate having a recess containing each of said corners and extending toward an outer side of the ceramic plate, said recess being defined at least in part by an arc of an angular length greater than the angle of line intersection at the respective contained corners.

Claim 20

A semiconductor device comprising: a ceramic plate having first and second major surfaces and an opening having corners defined by line extensions of sides of the opening intersecting at an angle; a heat sink having first and second major surfaces and joined by a bonding agent layer to the ceramic plate to cover the opening of the ceramic plate, the bonding agent layer being formed between the first major surface of the heat sink and an inner edge portion of the opening on the second major surface side of the ceramic plate; a semiconductor element mounted on the first major surface of the heat sink and located in the opening of the ceramic plate; and a cap mounted on the first major surface of the ceramic plate to cover the semiconductor element; the opening in the ceramic plate having a recess containing each of said corners and extending toward an outer side of the ceramic plate, said recess being defined at least in part by an arc of an angular length greater than the angle of line intersection at the respective contained corners.

Claim 21

A semiconductor device comprising: a ceramic plate having first and second major surfaces and an opening having corners; a heat sink having first and second major surfaces and joined by a bonding agent layer to the ceramic plate to cover the opening of the ceramic plate, the bonding agent layer being formed between the first major surface of the heat sink and an inner edge portion of the opening on the second major surface side of the ceramic plate; a semiconductor element mounted on the first major surface of the heat sink and located in the opening of the ceramic plate; and a cap mounted on the first major surface of the ceramic plate to cover the semiconductor element; wherein each of the corners of the opening in the ceramic plate has a curvature radius R of at least 2.0 mm.

Claim 22

A semiconductor device comprising: a ceramic plate having first and second major surfaces and an opening having corners; a heat sink having first and second major surfaces and joined by a bonding agent layer to the ceramic plate to cover the opening of the ceramic plate, the bonding agent layer being formed between the first major surface of the heat sink and an inner edge portion of the opening on the second major surface side of the ceramic plate; a semiconductor element mounted on the first major surface of the heat sink and located in the opening of the ceramic plate; and a cap mounted on the first major surface of the ceramic plate to cover the semiconductor element; wherein each of the corners of the opening in the ceramic plate has a curvature radius R of at least 2.0 mm.

Claim 23

A semiconductor device comprising: a ceramic plate having first and second major surfaces and an opening having corners; a heat sink having first and second major surfaces and a projection on the first major surface, said heat sink being joined by a bonding agent layer to the ceramic plate to cover the opening of the ceramic plate, said bonding agent layer being formed between the first major surface of the heat sink and an inner edge portion of the opening on a second major surface side of the ceramic plate, said projection being situated in said opening; a semiconductor element mounted on the first major surface of the heat sink and located in the opening of the ceramic plate; and a cap mounted on the first major surface of the ceramic plate to cover the semiconductor element, wherein the corners of the opening in the ceramic plate and the corners of the heat sink are shaped so that surface spacing of the opening in the ceramic plate and the projection of the heat sink at each of the corners is greater than surface spacing between the opening in the ceramic plate and the projection of the heat sink at side surfaces thereof.

Claim 24

A semiconductor device comprising: a ceramic plate having first and second major surfaces and an opening having corners; a heat sink having first and second major surfaces and a projection on the first major surface, said heat sink being joined by a bonding agent layer to the ceramic plate to cover the opening of the ceramic plate, said bonding agent layer being formed between the first major surface of the heat sink and an inner edge portion of the opening on a second major surface side of the ceramic plate, said projection being situated in said opening; a semiconductor element mounted on the first major surface of the heat sink and located in the opening of the ceramic plate; and a cap mounted on the first major surface of the ceramic plate to cover the semiconductor element, wherein the corners of the opening in the ceramic plate and the corners of the heat sink are shaped so that surface spacing of the opening in the ceramic plate and the projection of the heat sink at each of the corners is greater than surface spacing between the opening in the ceramic plate and the projection of the heat sink at side surfaces thereof.