Plastic-encapsulated semiconductor device

Claim 2

A resin-encapsulated semiconductor device comprising: an encapsulating sheet on a semiconductor chip, the encapsulating sheet being initially comprised of an uncured resin sheet, and a distribution of a resin composition additive between one surface of the encapsulating sheet contacting the semiconductor chip and an opposite surface of the encapsulating sheet to improve a desired property where the additive exists without deteriorating another desired property at the opposite surface; the encapsulating sheet being cured in place on the semiconductor chip, wherein the distribution of an additive in the resin composition of the resin sheet is gradually varied from one of improving a desired property without deteriorating another desired property near the one surface of the encapsulating sheet contacting the semiconductor chip to one of improving a different desired property without deteriorating another different desired property near the opposite surface.

Claim 3

A resin-encapsulated semiconductor device comprising: an encapsulating sheet on a semiconductor chip, the encapsulating sheet being initially comprised of an uncured resin sheet, and a distribution of a resin composition additive between one surface of the encapsulating sheet contacting the semiconductor chip and an opposite surface of the encapsulating sheet to improve a desired property where the additive exists without deteriorating another desired property at the opposite surface; the encapsulating sheet being cured in place on the semiconductor chip, wherein the distribution of the additive in the resin composition of the resin sheet differs between the one surface of the encapsulating sheet contacting the semiconductor chip and the opposite surface in at least one of the concentration and type of the additive, and wherein the encapsulating sheet comprises resin layers each having an additive distribution different from an adjacent layer in at least additive concentration for at least one type additive to provide a gradually varied distribution of the at least one type of additive between the one surface and the other surface of the resin sheet, the layers being bonded and mixed at an interface thereof.

Claim 4

A resin-encapsulated semiconductor device comprising: an encapsulating sheet on a semiconductor chip, the encapsulating sheet being initially comprised of an uncured resin sheet, and a distribution of a resin composition additive between one surface of the encapsulating sheet contacting the semiconductor chip and an opposite surface of the encapsulating sheet to improve a desired property where the additive exists without deteriorating another desired property at the opposite surface; the encapsulating sheet being cured in place on the semiconductor chip, wherein the distribution of the additive in the resin composition of the resin sheet differs between the one surface of the encapsulating sheet contacting the semiconductor chip and the opposite surface in at least one of the concentration and type of the additive, and wherein the encapsulating sheet comprises resin layers each having an additive distribution different from an adjacent layer in at least additive concentration for at least one type additive to provide a gradually varied distribution of the at least one type of additive between the one surface and the other surface of the resin sheet, the layers being bonded and mixed at an interface thereof.

Claim 5

A device according to claim 2, wherein the additive comprises at least one of a curing accelerator, a colorant, a mold releasing agent, an adhesion imparting agent, a flame retardant, and a filler.

Claim 6

A device according to claim 2, comprising a first encapsulating sheet on one side of the semiconductor chip and a second encapsulating sheet on another side of the semiconductor chip, and wherein the following relation is satisfied: 0.8<(abc)/(def)<1.2 where a: coefficient of thermal expansion of the first encapsulating sheet; b: elastic modula of the first encapsulating sheet; c: thickness of the first encapsulating sheet; d: coefficient of thermal expansion of the second encapsulating sheet; e: elastic modula of the second encapsulating sheet; and f: thickness of the second encapsulating sheet.

Claim 7

A device according to claim 2, wherein the additive distributions are such that the following condition in relation to semiconductor warpage is satisfied: ((L'-L)/L)<0.06 where L: thickness of the semiconductor device; and L': the maximum height of the semiconductor device measured from a flat surface.

Claim 8

A resin-encapsulated semiconductor device comprising: a resin-encapsulating sheet of resin layers each having an unique distribution of a resin composition additive to improve a desired property in the resin-encapsulating sheet at an inner surface thereof without deteriorating another desired property at the opposite outer surface of the of the resin-encapsulating sheet due to presence of the same additive at the outer surface, wherein the distribution of the resin composition additive varies gradually between the inner surface of the resin-encapsulating sheet and the opposite outer surface thereof, and wherein the additive comprises at least one of additive types including a curing accelerator, a colorant, a mold releasing agent, an adhesion imparting agent, a flame retardant, and a filler; and a semiconductor chip encapsulated by surface contact with the inner surface of the resin-encapsulating sheet.

Claim 9

A resin-encapsulated semiconductor device comprising: a resin-encapsulating sheet of resin layers each having an unique distribution of a resin composition additive to improve a desired property in the resin-encapsulating sheet at an inner surface thereof without deteriorating another desired property at the opposite outer surface of the of the resin-encapsulating sheet due to presence of the same additive at the outer surface, wherein the distribution of the resin composition additive varies gradually between the inner surface of the resin-encapsulating sheet and the opposite outer surface thereof, and wherein the additive comprises at least one of additive types including a curing accelerator, a colorant, a mold releasing agent, an adhesion imparting agent, a flame retardant, and a filler; and a semiconductor chip encapsulated by surface contact with the inner surface of the resin-encapsulating sheet.

Claim 10

A device according to claim 6, wherein the distribution of the resin composition additive at the inner surface of the resin-encapsulating sheet in contact with the semiconductor chip differs from additive distribution at the opposite outer surface in concentration of at least one type of additive.

Claim 11

A device according to claim 6, wherein the resin-encapsulating sheet comprises resin layers each having a resin composition additive differing from the other layers in concentration of at least one type of the additive, said resin layers being bonded and mixed at an interface thereof.

Claim 12

A device according to claim 6, wherein the resin layers are of substantially the same resin composition so as to be bonded and mixed at an interface thereof.

Claim 13

A device according to claim 6, wherein concentration of at least one of the mold releasing agent, the flame retardant, the filler, and the curing accelerator at the inner surface of the resin-encapsulating sheet contacting to the semiconductor chip is smaller than that at the outer surface.

Claim 14

A device according to claim 6, wherein the resin composition additive is a filler, the average diameter of the filler at the inner surface of the resin-encapsulating sheet contacting the semiconductor chip being smaller than that at the outer surface.

Claim 15

A device according to claim 6, wherein the resin composition additive is a filler having at least one of a crushed shape, a flake shape, and a fiber shape, the filler concentration at the inner surface of the resin-encapsulating sheet contacting the semiconductor chip being smaller than that at the outer surface.

Claim 16

A device according to claim 6, wherein the resin composition additive is a filler, a concentration of at least one of U and Th in the filler at the inner surface of the resin-encapsulating sheet contacting the semiconductor chip being smaller than that at the outer surface.

Claim 17

A device according to claim 6, wherein the additive is an adhesion imparting agent having a concentration at the inner surface of the resin-encapsulating sheet contacting the semiconductor chip larger than that at the outer surface.

Claim 18

A device according to claim 6, wherein said resin encapsulating sheet is a first resin-encapsulating sheet on an upper side of the semiconductor chip and comprisinq a second resin-encapsulating sheet on the lower side of the semiconductor chip, and wherein the additive distributions are in ranges where the following relation is satisfied: 0.8<(abc)/(def)<1.2 where a: coefficient of thermal expansion of the first resin-encapsulating sheet; b: elastic modula of the first resin-encapsulating sheet; c: thickness of the first resin-encapsulating sheet; d: coefficient of thermal expansion of the second resin-encapsulating sheet; e: elastic modula of the second resin-encapsulating sheet; and f: thickness of the second resin-encapsulating sheet.

Claim 19

A device according to claim 6, wherein the additive distributions are selected so that the following condition in relation to semiconductor warpage is satisfied: {(L'-L)/L}<0.06 where L: thickness of the semiconductor device; and L': the maximum height of the semiconductor device measured from a flat surface.

Claim 20

A resin-encapsulated semiconductor device comprising: a semiconductor chip; a first resin-encapsulating sheet formed on an upper side of the semiconductor chip; and a second resin-encapsulating sheet formed on a lower side of the semiconductor chip, the first and second resin-encapsulating sheets having different distribution of resin composition additive so that the following condition in relation to semiconductor warpage is satisfied: {(L'-L)/L}<0.06 where L: thickness of the semiconductor device; and L': the maximum height of the semiconductor device measured from a flat surface.

Claim 21

A resin-encapsulated semiconductor device comprising: a semiconductor chip; a first resin-encapsulating sheet formed on an upper side of the semiconductor chip; and a second resin-encapsulating sheet formed on a lower side of the semiconductor chip, the first and second resin-encapsulating sheets having different distribution of resin composition additive so that the following condition in relation to semiconductor warpage is satisfied: {(L'-L)/L}<0.06 where L: thickness of the semiconductor device; and L': the maximum height of the semiconductor device measured from a flat surface.

Claim 22

A resin-encapsulated semiconductor device comprising: a semiconductor chip; a first resin-encapsulating sheet formed on an upper side of the semiconductor chip; and a second resin-encapsulating sheet formed on a lower side of the semiconductor chip, the first and second resin-encapsulating sheets having different additive distribution and wherein the following relation of first and second resin-encapsulating sheet characteristics is maintained: 0.8<(abc)/(def)<1.2 where a: coefficient of thermal expansion of the first resin-encapsulating sheet; b: elastic modula of the first resin-encapsulating sheet; c: thickness of the first resin-encapsulating sheet; d: coefficient of thermal expansion of the second resin-encapsulating sheet; e: elastic modula of the second resin-encapsulating sheet; and f: thickness of the second resin-encapsulating sheet.

Claim 23

A resin-encapsulated semiconductor device comprising: a semiconductor chip; a first resin-encapsulating sheet formed on an upper side of the semiconductor chip; and a second resin-encapsulating sheet formed on a lower side of the semiconductor chip, the first and second resin-encapsulating sheets having different additive distribution and wherein the following relation of first and second resin-encapsulating sheet characteristics is maintained: 0.8<(abc)/(def)<1.2 where a: coefficient of thermal expansion of the first resin-encapsulating sheet; b: elastic modula of the first resin-encapsulating sheet; c: thickness of the first resin-encapsulating sheet; d: coefficient of thermal expansion of the second resin-encapsulating sheet; e: elastic modula of the second resin-encapsulating sheet; and f: thickness of the second resin-encapsulating sheet.

Claim 24

A device according to claim 18, wherein the following condition in relation to semiconductor warpage is also satisfied: {(L'-L)/L}<0.06 L: thickness of the semiconductor device; and L': the maximum height of the semiconductor device measured from a flat surface.

Claim 25

An encapsulating sheet for encapsulating a semiconductor device when placed on the semiconductor chip, and cured, the encapsulating sheet comprising: an uncured resin sheet having a resin composition additive of a distribution different between one surface of the encapsulating sheet contacting the semiconductor and an opposite surface, and the additive comprises at least one of curing accelerator, a colorant, a mold releasing agent, an adhesion imparting agent, a flame retardant, and a filler.

Claim 26

An encapsulating sheet for encapsulating a semiconductor device when placed on the semiconductor chip, and cured, the encapsulating sheet comprising: an uncured resin sheet having a resin composition additive of a distribution different between one surface of the encapsulating sheet contacting the semiconductor and an opposite surface, and the additive comprises at least one of curing accelerator, a colorant, a mold releasing agent, an adhesion imparting agent, a flame retardant, and a filler.