Antifuse element and semiconductor device having antifuse elements

Claim 2

An antifuse element in an integrated circuit device, the integrated ciucuit device being formed within and on a substrate, the antifuse element being capable of assuming a programmed state and an unprogrammed state and comprising: a bottom electrode including at least an uppermost layer thereof made from a conductive material having an amorphous structure; a top electrode; and an antifuse material layer sandwiched between the bottom and top electrodes.

Claim 3

The antifuse element according to claim 1, wherein one of the top electrode and a lowermost portion of the top electrode of the antifuse element is formed of a conductive material having an amorphous structure.

Claim 4

The antifuse element according to claim 1, wherein the conductive material having an amorphous structure is any of the following elements or compounds (1)-(10): (1) at least two elements of a first element group including Fe, Co, Ni, Cu, Mn, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta and W; (2) a compound formed by at least one element of the first element group and at least one element of a second element group including Si, B, N, C, Ge, As, P and Sb; (3) a compound formed by at least one element of the first element group, at least one element of the second element group and one element of a third element group including Y and La; (4) a compound formed by at least one element of the first element group and Al; (5) a compound formed by at least one element of the third element group and Al; (6) a compound formed by at least one element of the first element group, at least one element of the third element group, and Al; (7) a compound formed by any one element of a fourth element group including Au, Pt, Pd and Ag, and at least any one element of the second element group; (8) a compound formed by at least one element of the first element group and any one element of the fourth element group; (9) a compound formed by at least any one element of the third element group and any one element of the fourth element group; and (10) a compound formed by at least any one element of the first element group, at least any one element of the third element group, and any one element of the fourth element group.

Claim 5

The antifuse element according to claim 1, wherein the antifuse material film is formed of a single layer of silicon oxide, silicon nitride, or tantalum oxide, or a multi-layer combination of at least two of silicon oxide, silicon nitride and tantalum oxide.

Claim 6

The antifuse element according to claim 3, wherein the conductive material is a compound formed by metallic elements and non-metallic elements having a metallic composition ratio that is larger than a stoichiometric composition ratio.

Claim 7

The antifuse element according to claim 1, wherein the bottom electrode includes a silicon oxide film formed by removing the surface thereof, and the antifuse material film is formed on the silicon oxide film.

Claim 8

The antifuse element according to claim 3, wherein: the bottom electrode is formed in a first level metal interconnect of the semiconductor device, and the top electrode is formed in a second level metal interconnect layer of the semiconductor device which is mounted over the first level metal interconnect layer.

Claim 9

The antifuse element according to claim 3, wherein: the bottom electrode is formed on a dielectric separator for dielectrically separating semiconductor elements from each other.

Claim 10

A semiconductor device including at least one antifuse element defined in claim 1.

Claim 11

The antifuse element according to claim 3, wherein said conductive material having the amorphous structure is a compound formed by at least one element of the first element group and at least one element of the second element group including Si, B, N, C, Ge, As, P and Sb.

Claim 12

The antifuse element according to claim 10, wherein said compound is one of WSi, MoSi and Ti-Si-N.

Claim 13

The antifuse element according to claim 4, wherein the antifuse material film comprises a silicon nitride film having a thickness of 5 nm to 20 nm.

Claim 14

The antifuse element according to claim 5, wherein the metallic composition ratio of W in WSi is 45-50% and the metallic composition ratio of Ti in TiN is 50-60%.