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US5641702A
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Method of making semiconductor integrated-circuit capacitor
Assignee: Toshiba Corp
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Filing: 1995-04-12
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Granted: 1997-06-24
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Expires: 2015-04-12
Abstract
Abstract A semiconductor integrated-circuit capacitor comprises a lower electrode formed on a semiconductor substrate, a capacitor insulating film formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. The capacitor insulating film is made of a high-permittivity material, and at least one of the upper and lower electrodes is made of a carbon film or a multilayered film composed of a carbon film and a conductor film other than carbon.
Inventors
- 👤 Keitaro Imai
- 👤 Haruo Okano
- 👤 Tomonori Aoyama
- 👤 Yasunori Okayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:44
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D1/62; H10D64/00; H10D64/60; H10D64/66; H10D1/682; H10D1/684; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
81 words
A method of manufacturing a semiconductor integrated-circuit capacitor comprising the steps of: forming a capacitor lower electrode on a semiconductor substrate; forming a capacitor insulating film of a high-permativity material having a dielectric constant of at least 20, on said capacitor lower electrode; annealing said capacitor insulating film in a gas atmosphere containing excited oxygen prepared from an oxygen plasma or by discharge in oxygen gas; and forming a capacitor upper electrode on said capacitor insulating film that has been annealed.
Claim 2
Independent Claim
81 words
A method of manufacturing a semiconductor integrated-circuit capacitor comprising the steps of: forming a capacitor lower electrode on a semiconductor substrate; forming a capacitor insulating film of a high-permativity material having a dielectric constant of at least 20, on said capacitor lower electrode; annealing said capacitor insulating film in a gas atmosphere containing excited oxygen prepared from an oxygen plasma or by discharge in oxygen gas; and forming a capacitor upper electrode on said capacitor insulating film that has been annealed.
Claim 3
Dependent Claim
27 words
A method of manufacturing a semiconductor integrated-circuit capacitor according to claim 1, wherein the step of forming said capacitor upper electrode includes formation of a carbon film.
Claim 4
Dependent Claim
30 words
A method of manufacturing a semiconductor integrated-circuit capacitor according to claim 2, wherein the formation of said carbon film is carried out at a temperature of 300° C. or more.
Claim 5
Dependent Claim
24 words
A method of manufacturing a semiconductor integrated-circuit capacitor according to claim 3, wherein the formation of said carbon film is carried out by sputtering.
Claim 6
Dependent Claim
22 words
A method of manufacturing a semiconductor integrated-circuit capacitor according to claim 1, wherein said capacitor upper electrode consists of a metal film.
Claim 7
Dependent Claim
43 words
The method of manufacturing a semiconductor integrated-circuit capacitor according to claim 1, wherein said high-permativity material is selected from the group consisting of silicon nitride, tantalum pentoxide, zirconium dioxide, hafnium dioxide, niobium pentoxide, lead titanate, lead zirconate titanate, strontium titanate and barium titanate.
Claim 8
Dependent Claim
24 words
The method of claim 1, wherein said capacitor upper electrode comprises at least one member selected from the group consisting of carbon and tungsten.
Claim 9
Dependent Claim
24 words
The method of claim 2, wherein said carbon film comprises at least one member selected from the group consisting of boron, phosphorus and arsenic.
Claim 10
Dependent Claim
18 words
The method of claim 2, wherein said capacitor upper electrode is a two-layer film comprising carbon and tungsten.
Claim 11
Dependent Claim
23 words
The method of claim 1, wherein said excited oxygen is prepared from an oxygen plasma prepared by a RF discharge of 50-300 W.
Claim 12
Dependent Claim
33 words
The method of claim 1, wherein said high-permativity material is selected from the group consisting of silicon nitride, tantalum pentoxide, zirconium dioxide, hafnium dioxide, niobium pentoxide, lead titanate, strontium titanate and barium titanate.
Claim 13
Dependent Claim
12 words
The method of claim 1, wherein said excited oxygen comprises atomic oxygen.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-06-23 | 2000-12-23 | 2001-06-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-06-23 | 2004-12-23 | 2005-06-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-06-23 | 2008-12-23 | 2009-06-24 | $7700.00 | Window Closed / Lapsed |