Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
205 words
A method of manufacturing a semiconductor device formed near a surface of a semiconductor substrate, and having an integrated circuit region surrounded by an insulation part and separated from other region, wherein an outer peripheral part of the integrated circuit region is defined as a dummy cell region and a center part except the outer peripheral part of the integrated circuit region is defined as an active cell region, the method comprising the steps of: forming a field oxide layer on the semiconductor substrate which is to be the insulation part and to be an isolation defining the integrated circuit region into a plurality of cell forming regions; introducing an impurity for forming a channel region near the surface of the semiconductor substrate; forming a gate on the semiconductor substrate and the field oxide layer; forming a photo-mask for covering at least a part of the dummy cell region; forming a source/drain region at each cell forming region of the active cell region by ion implantation of impurity having a conductive type inverse to that of the semiconductor substrate, using the photo-mask and the gate as a mask; and removing the photo-mask at the dummy cell region after the step of forming the source/drain region.
Claim 2
Independent Claim
205 words
A method of manufacturing a semiconductor device formed near a surface of a semiconductor substrate, and having an integrated circuit region surrounded by an insulation part and separated from other region, wherein an outer peripheral part of the integrated circuit region is defined as a dummy cell region and a center part except the outer peripheral part of the integrated circuit region is defined as an active cell region, the method comprising the steps of: forming a field oxide layer on the semiconductor substrate which is to be the insulation part and to be an isolation defining the integrated circuit region into a plurality of cell forming regions; introducing an impurity for forming a channel region near the surface of the semiconductor substrate; forming a gate on the semiconductor substrate and the field oxide layer; forming a photo-mask for covering at least a part of the dummy cell region; forming a source/drain region at each cell forming region of the active cell region by ion implantation of impurity having a conductive type inverse to that of the semiconductor substrate, using the photo-mask and the gate as a mask; and removing the photo-mask at the dummy cell region after the step of forming the source/drain region.
Claim 3
Dependent Claim
56 words
The method of manufacturing a semiconductor device according to claim 1, wherein at the step of forming the photo-mask, the photo-mask covering a region of the dummy cell region which excludes a part located in a direction conforming with a direction of tilted ion implantation to the active cell in the active cell region is formed.
Claim 4
Dependent Claim
38 words
The method of manufacturing a semiconductor device according to claim 1 or 2, further comprising the step of forming a punch-through stopper by impurity ion implantation deep to the semiconductor substrate before the step of forming the gate.
Claim 5
Dependent Claim
31 words
The method of manufacturing a semiconductor device according to claim 1 or 2, further comprising the step of forming a channel stopper by impurity ion implantation below the field oxide layer.
Claim 6
Dependent Claim
55 words
The method of manufacturing a semiconductor device according to claim 2, wherein DRAM memory cells are arranged at the active cell region in the semiconductor device, and at the step of forming the photo-mask, the photo-mask is provided with forming parts and open parts which are alternately arranged in a direction parallel with the gate.