US4830977A
Expired / Lapsed
US
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Method of making a semiconductor memory device
Assignee: Hitachi Ltd
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Filing: 1988-01-27
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Granted: 1989-05-16
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Expires: 2008-01-27
Abstract
Abstract A semiconductor memory device having wiring formed next to word lines at the extreme ends of the memory cell arrays or next to word lines of the dummy cell arrays, in order to prevent such word lines from breaking or from becoming deformed. The wiring is irrelevant to the circuit operation, but is provided with a fixed potential, and is formed through the steps of forming the word lines. The wiring makes the processing conditions applied to the neighboring word lines the same as the processing conditions applied to other word lines.
Inventors
- 👤 Hisao Katto
- 👤 June Sugiura
- 👤 Nozomi Horino
- 👤 Akira Endo
- 👤 Yoshiharu Takeuchi
- 👤 Yuji Arakawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:22
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; G; G11; G11C; G11C5/00; G11C5/02; G11C5/025; H10B; H10B12/00; H10B12/30; Y; Y10; Y10S; Y10S257/00; Y10S257/922; Y10S257/925; Y10S438/00; Y10S438/926
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
264 words
A method of forming a semiconductor device which includes at least one memory cell array having a plurality of memory cells that are formed in rows and in columns on a semiconductor substrate, a plurality of data lines formed in columns, said data lines being coupled to said memory cells that are arrayed in corresponding columns, a plurality of word lines formed in rows, said word lines being coupled to said memory cells that are arrayed in corresponding rows, and a film that is formed to extend in the same direction as said plurality of word lines formed in rows and located between said plurality of word lines and at least one peripheral edge of said memory cell array, said film being composed of the same material as said word lines, said method comprising: forming a photoresist layer over said plurality of word lines and said film after the formation of the word lines and the film; and forming contact holes using said photoresist layer as a mask by dry etching in an intermediate film formed between the word lines and the data lines to coupled the data lines to the memory cells, wherein said film is located on said substrate at a location to prevent the thickness of the resist film from decreasing on the word lines which are located closest to said peripheral edge, and wherein said data lines are comprised of aluminum, and wherein said word lines and said film are each comprised of a first layer of polycrystalline silicon and a second layer of silicide formed over said first layer.
Claim 2
Independent Claim
264 words
A method of forming a semiconductor device which includes at least one memory cell array having a plurality of memory cells that are formed in rows and in columns on a semiconductor substrate, a plurality of data lines formed in columns, said data lines being coupled to said memory cells that are arrayed in corresponding columns, a plurality of word lines formed in rows, said word lines being coupled to said memory cells that are arrayed in corresponding rows, and a film that is formed to extend in the same direction as said plurality of word lines formed in rows and located between said plurality of word lines and at least one peripheral edge of said memory cell array, said film being composed of the same material as said word lines, said method comprising: forming a photoresist layer over said plurality of word lines and said film after the formation of the word lines and the film; and forming contact holes using said photoresist layer as a mask by dry etching in an intermediate film formed between the word lines and the data lines to coupled the data lines to the memory cells, wherein said film is located on said substrate at a location to prevent the thickness of the resist film from decreasing on the word lines which are located closest to said peripheral edge, and wherein said data lines are comprised of aluminum, and wherein said word lines and said film are each comprised of a first layer of polycrystalline silicon and a second layer of silicide formed over said first layer.
Claim 3
Dependent Claim
20 words
A method of forming a semiconductor device according to claim 1, wherein said film is coupled to a fixed potential.
Claim 4
Dependent Claim
28 words
A method of forming a semiconductor device according to claim 2, wherein said film is arranged to have no participation in the operation of said memory cell array.
Claim 5
Dependent Claim
34 words
A method of forming a semiconductor device according to claim 1, wherein the distance between said film and the word line immediately adjacent thereto is the same as the distance between said word lines.
Claim 6
Dependent Claim
24 words
A method of forming a semiconductor device according to claim 1, wherein said word lines and said film are formed simultaneously with one another.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1992-05-15 | 1992-11-14 | 1993-05-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-15 | 1996-11-14 | 1997-05-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-15 | 2000-11-14 | 2001-05-16 | $7700.00 | Window Closed / Lapsed |