Abstract Applicants have discovered methods for making, treating and using diamonds which substantially enhance their capability for low voltage emission. Specifically, applicants have discovered that defect-rich diamonds--diamonds grown or treated to increase the concentration of defects--have enhanced properties of low voltage emission. Defect-rich diamonds are characterized in Raman spectroscopy by a diamond peak at 1332 cm -1 broadened by a full width at half maximum ΔK in the range 5-15 cm -1 (and preferably 7-11 cm -1 ). Such defect-rich diamonds can emit electron current densities of 0.1 mA/mm 2 or more at a low applied field of 25 V/μm or less. Particularly advantageous structures use such diamonds in an array of islands or particles each less than 10 μm in diameter at fields of 15 V/μm or less.
A diamond field emitter for emitting electrons at low voltage comprising: a substrate; disposed on said substrate, a diamond material characterized by a diamond peak at 1332 cm -1 in Raman spectroscopy broadened to a full width at half maximum in the range 5-15 cm -1 , said diamond material capable of emitting electrons in a current density of at least 0.1 mA/mm 2 at an applied field of 25 V/μm or less; and means for electrically contacting said field emitter.
Claim 2
Dependent Claim
81 words
A diamond field emitter for emitting electrons at low voltage comprising: a substrate; disposed on said substrate, a diamond material characterized by a diamond peak at 1332 cm -1 in Raman spectroscopy broadened to a full width at half maximum in the range 5-15 cm -1 , said diamond material capable of emitting electrons in a current density of at least 0.1 mA/mm 2 at an applied field of 25 V/μm or less; and means for electrically contacting said field emitter.
Claim 3
Dependent Claim
22 words
A diamond emitter according to claim 1 wherein said full width at half maximum is in the range 7-11 cm -1 .
Claim 4
Dependent Claim
28 words
A diamond emitter according to claim 1 wherein said diamond material is in the form of a plurality of islands or particles having diameters less than 10 μm.
Claim 5
Dependent Claim
28 words
A diamond emitter according to claim 1 wherein said diamond material is in the form of a plurality of islands or particles having diameters less than 2 μm.
Claim 6
Dependent Claim
26 words
A diamond emitter according to claim 1 wherein said substrate has a diamond nucleation site density in the range 10 7 -10 10 /cm 2 .
Claim 7
Dependent Claim
97 words
In a field emission device comprising a cathode including at least one field emitter, an anode spaced from said cathode and means for applying a voltage between said anode and said cathode for inducing emission of electrons, the improvement wherein: said field emitter comprises diamond material characterized by a diamond peak at 1332 cm -1 in Raman spectroscopy broadened to a full width at half maximum in the range 5-15 cm -1 , said diamond material emitting electrons in a current density of at least 0.1 mA/mm 2 at an applied field of 25 V/μm or less.
Claim 8
Dependent Claim
97 words
In a field emission device comprising a cathode including at least one field emitter, an anode spaced from said cathode and means for applying a voltage between said anode and said cathode for inducing emission of electrons, the improvement wherein: said field emitter comprises diamond material characterized by a diamond peak at 1332 cm -1 in Raman spectroscopy broadened to a full width at half maximum in the range 5-15 cm -1 , said diamond material emitting electrons in a current density of at least 0.1 mA/mm 2 at an applied field of 25 V/μm or less.