US5637950A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Field emission devices employing enhanced diamond field emitters
Assignee: Nokia of America Corp
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Filing: 1994-10-31
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Granted: 1997-06-10
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Expires: 2014-10-31
Abstract
Abstract Applicants have discovered methods for making, treating and using diamonds which substantially enhance their capability for low voltage emission. Specifically, applicants have discovered that defect-rich diamonds--diamonds grown or treated to increase the concentration of defects--have enhanced properties of low voltage emission. Defect-rich diamonds are characterized in Raman spectroscopy by a diamond peak at 1332 cm -1 broadened by a full width at half maximum ΔK in the range 5-15 cm -1 (and preferably 7-11 cm -1 ). Such defect-rich diamonds can emit electron current densities of 0.1 mA/mm 2 or more at a low applied field of 25 V/μm or less. Particularly advantageous structures use such diamonds in an array of islands or particles each less than 10 μm in diameter at fields of 15 V/μm or less.
Inventors
- 👤 Sungho Jin
- 👤 Gregory P. Kochanski
- 👤 Lawrence Seibles
- 👤 Wei Zhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 00:31
CPC Classifications
H; H01; H01J; H01J1/00; H01J1/02; H01J1/30; H01J1/304; H01J1/3042; H01J9/00; H01J9/24; H01J2201/00; H01J2201/30; H01J2201/304; H01J2201/30403; H01J2201/30446; H01J2201/30453; H01J2201/30457; H01J2329/00
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
81 words
A diamond field emitter for emitting electrons at low voltage comprising: a substrate; disposed on said substrate, a diamond material characterized by a diamond peak at 1332 cm -1 in Raman spectroscopy broadened to a full width at half maximum in the range 5-15 cm -1 , said diamond material capable of emitting electrons in a current density of at least 0.1 mA/mm 2 at an applied field of 25 V/μm or less; and means for electrically contacting said field emitter.
Claim 2
Dependent Claim
81 words
A diamond field emitter for emitting electrons at low voltage comprising: a substrate; disposed on said substrate, a diamond material characterized by a diamond peak at 1332 cm -1 in Raman spectroscopy broadened to a full width at half maximum in the range 5-15 cm -1 , said diamond material capable of emitting electrons in a current density of at least 0.1 mA/mm 2 at an applied field of 25 V/μm or less; and means for electrically contacting said field emitter.
Claim 3
Dependent Claim
22 words
A diamond emitter according to claim 1 wherein said full width at half maximum is in the range 7-11 cm -1 .
Claim 4
Dependent Claim
28 words
A diamond emitter according to claim 1 wherein said diamond material is in the form of a plurality of islands or particles having diameters less than 10 μm.
Claim 5
Dependent Claim
28 words
A diamond emitter according to claim 1 wherein said diamond material is in the form of a plurality of islands or particles having diameters less than 2 μm.
Claim 6
Dependent Claim
26 words
A diamond emitter according to claim 1 wherein said substrate has a diamond nucleation site density in the range 10 7 -10 10 /cm 2 .
Claim 7
Dependent Claim
97 words
In a field emission device comprising a cathode including at least one field emitter, an anode spaced from said cathode and means for applying a voltage between said anode and said cathode for inducing emission of electrons, the improvement wherein: said field emitter comprises diamond material characterized by a diamond peak at 1332 cm -1 in Raman spectroscopy broadened to a full width at half maximum in the range 5-15 cm -1 , said diamond material emitting electrons in a current density of at least 0.1 mA/mm 2 at an applied field of 25 V/μm or less.
Claim 8
Dependent Claim
97 words
In a field emission device comprising a cathode including at least one field emitter, an anode spaced from said cathode and means for applying a voltage between said anode and said cathode for inducing emission of electrons, the improvement wherein: said field emitter comprises diamond material characterized by a diamond peak at 1332 cm -1 in Raman spectroscopy broadened to a full width at half maximum in the range 5-15 cm -1 , said diamond material emitting electrons in a current density of at least 0.1 mA/mm 2 at an applied field of 25 V/μm or less.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-06-09 | 2000-12-09 | 2001-06-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-06-09 | 2004-12-09 | 2005-06-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-06-09 | 2008-12-09 | 2009-06-10 | $7700.00 | Window Closed / Lapsed |