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US5637530A
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II-VI compound semiconductor epitaxial layers having low defects, method for producing and devices utilizing same
Assignee: US Philips Corp
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Filing: 1996-06-10
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Granted: 1997-06-10
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Expires: 2016-06-10
Abstract
Abstract Epitaxial layers of II-VI semiconductor compounds having low incidence of lattice defects such as stacking faults are produced by first depositing a fraction of a monolayer of the cation species of the compound, followed by depositing a thin layer of the compound by migration enhanced epitaxy (MEE). Growth of the remainder of the layer by MBE results in much lower defects than if the entire layer had been grown by MBE. Layers are useful in devices such as LEDs and injection lasers.
Inventors
- 👤 James M. Gaines
- 👤 John Petruzzello
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:52
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/125; H10F71/1257; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3428; H10P14/3431; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
90 words
Method for producing an epitaxial layer of a II-VI semiconductor compound comprising a cation and an anion species, the method comprising the steps of: (a) depositing an initial layer of the cation species of a thickness of less than a monolayer directly on the surface of an epitaxial substrate consisting essentially of GaAs; and (b) depositing at least a first portion of the epitaxial layer by MEE directly on the initial cation layer, wherein MEE comprises consecutive periods of alternative deposition of the cation and anion species of the compound.
Claim 2
Dependent Claim
90 words
Method for producing an epitaxial layer of a II-VI semiconductor compound comprising a cation and an anion species, the method comprising the steps of: (a) depositing an initial layer of the cation species of a thickness of less than a monolayer directly on the surface of an epitaxial substrate consisting essentially of GaAs; and (b) depositing at least a first portion of the epitaxial layer by MEE directly on the initial cation layer, wherein MEE comprises consecutive periods of alternative deposition of the cation and anion species of the compound.
Claim 3
Dependent Claim
23 words
The method of claim 1 in which a second portion of the epitaxial compound is deposited by MBE directly on the MEE layer.
Claim 4
Dependent Claim
10 words
The method of claim 1 wherein the cation is Zn.
Claim 5
Dependent Claim
22 words
The method of claim 3 wherein the compound is ZnSxSe 1-x , where x has a value of from zero to 1.0.
Claim 6
Dependent Claim
24 words
The method of claim 3 in which the initial layer is deposited at a temperature within the range of about 200° to 500° C.
Claim 7
Dependent Claim
25 words
The method of claim 4 in which the MEE deposition is carried out at a temperature within the range of about 150° to 400° C.
Claim 8
Dependent Claim
25 words
The method of claim 2 in which the MBE deposition is carried out at a temperature within the range of about 250° to 400° C.
Claim 9
Dependent Claim
19 words
The method of claim 1 wherein less than a monolayer is deposited during each period of the MEE deposition.
References Cited (Backward Citations)
US4876218A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-06-09 | 2000-12-09 | 2001-06-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-06-09 | 2004-12-09 | 2005-06-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-06-09 | 2008-12-09 | 2009-06-10 | $7700.00 | Window Closed / Lapsed |