US5637237A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
Assignee: International Business Machines Corp
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Filing: 1995-06-07
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Granted: 1997-06-10
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Expires: 2015-06-07
Abstract
Abstract The present invention relates to a method and apparatus for etching semiconductor devices where the undesirable deposition of films on the internal surfaces of the apparatus are prevented during the etching process. The system for etching devices provides an etching chamber having a deposition resistant surface, a holder for holding the device to be etched, and a heater for heating the deposition resistant surface to a temperature between 100 C to 600 C to impede the formation of films on the walls of the chamber. The etching system may further include the deposition resistant surface surrounding the holder while not interfering with the plasma used to etch the substrate.
Inventors
- 👤 Gottlieb S. Oehrlein
- 👤 David Vender
- 👤 Ying Zhang
- 👤 Marco Haverlag
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:33
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32798; H01J37/32853; H01J37/32862; Y; Y10; Y10S; Y10S156/00; Y10S156/914
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
75 words
A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of: providing an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber; heating said surface to a temperature between 290° C. to 310° C. to prevent the formation of a deposition film on said surface during etching; and generating a plasma for etching using a fluorocarbon gas.
Claim 2
Independent Claim
75 words
A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of: providing an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber; heating said surface to a temperature between 290° C. to 310° C. to prevent the formation of a deposition film on said surface during etching; and generating a plasma for etching using a fluorocarbon gas.
Claim 3
Dependent Claim
15 words
The method of claim 1, wherein said surface is the wall of the etching chamber.
Claim 4
Dependent Claim
16 words
The method of claim 2, wherein said surface is coated with Al 2 O 3 .
Claim 5
Dependent Claim
22 words
The method of claim 1, wherein said surface is coated with a material to reduce erosion of said surface in said plasma.
Claim 6
Dependent Claim
34 words
The method of claim 4, wherein said surface is coated with a material selected from the group consisting of Al 2 O 3 , Y 2 O 3 and Sc 2 O 3 .
Claim 7
Dependent Claim
16 words
The method of claim 5, wherein said surface is coated with Al 2 O 3 .
Claim 8
Independent Claim
85 words
A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of: providing an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber; heating said surface to a temperature between 290° C. to 310° C. to prevent the formation of a deposition film on said surface during etching; generating a plasma comprised of a fluorocarbon gas for etching; and etching an oxide on the substrate using the plasma.
Claim 9
Independent Claim
85 words
A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of: providing an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber; heating said surface to a temperature between 290° C. to 310° C. to prevent the formation of a deposition film on said surface during etching; generating a plasma comprised of a fluorocarbon gas for etching; and etching an oxide on the substrate using the plasma.
Claim 10
Dependent Claim
16 words
The method of claim 1, wherein said surface is a liner disposed in the etching chamber.
Claim 11
Independent Claim
83 words
A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of: providing an etching chamber having a liner disposed in said etching chamber where said liner is coated with a material to reduce erosion of said surface in a plasma; heating said surface to a temperature between 290° C. to 310° C. to prevent the formation of a deposition film on said surface during etching; and generating said plasma for etching using a fluorocarbon gas.
Claim 12
Independent Claim
83 words
A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of: providing an etching chamber having a liner disposed in said etching chamber where said liner is coated with a material to reduce erosion of said surface in a plasma; heating said surface to a temperature between 290° C. to 310° C. to prevent the formation of a deposition film on said surface during etching; and generating said plasma for etching using a fluorocarbon gas.
Claim 13
Dependent Claim
16 words
The method of claim 9, wherein said liner is coated with Sc 2 O 3 .
Claim 14
Dependent Claim
16 words
The method of claim 9, wherein said liner is coated with Y 2 O 3 .
Claim 15
Dependent Claim
16 words
The method of claim 9, wherein said liner is coated with Al 2 O 3 .
Claim 16
Independent Claim
94 words
A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of: providing an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber where said surface is coated with Y 2 O 3 to reduce erosion of said surface in a plasma; heating said surface to a temperature between 290° C. to 310° C. to prevent the formation of a deposition film on said surface during etching; and generating said plasma for etching using a fluorocarbon gas.
Claim 17
Independent Claim
94 words
A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of: providing an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber where said surface is coated with Y 2 O 3 to reduce erosion of said surface in a plasma; heating said surface to a temperature between 290° C. to 310° C. to prevent the formation of a deposition film on said surface during etching; and generating said plasma for etching using a fluorocarbon gas.
Claim 18
Independent Claim
94 words
A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of: providing an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber where said surface is coated with Sc 2 O 3 to reduce erosion of said surface in a plasma; heating said surface to a temperature between 290° C. to 310° C. to prevent the formation of a deposition film on said surface during etching; and generating said plasma for etching using a fluorocarbon gas.
Claim 19
Independent Claim
94 words
A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of: providing an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber where said surface is coated with Sc 2 O 3 to reduce erosion of said surface in a plasma; heating said surface to a temperature between 290° C. to 310° C. to prevent the formation of a deposition film on said surface during etching; and generating said plasma for etching using a fluorocarbon gas.
Claim 20
Independent Claim
94 words
A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of: providing an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber; heating said surface to a temperature between 290° C. to 310° C. to prevent the formation of a deposition film on said surface during etching; and generating a plasma for etching using a gas selected from the group consisting of CHF 3 (100%), CHF 3 /H 2 (30%) and CHF 3 /H 2 (50%).
Claim 21
Independent Claim
94 words
A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of: providing an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber; heating said surface to a temperature between 290° C. to 310° C. to prevent the formation of a deposition film on said surface during etching; and generating a plasma for etching using a gas selected from the group consisting of CHF 3 (100%), CHF 3 /H 2 (30%) and CHF 3 /H 2 (50%).
Claim 22
Independent Claim
79 words
A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of: providing an etching chamber having a surface defining a wall of the etching chamber where said surface is coated with Sc 2 O 3 ; heating said surface to a temperature between 290° C. to 310° C. to prevent the formation of a deposition film on said surface during etching; and generating a plasma for etching using a fluorocarbon gas.
Claim 23
Independent Claim
79 words
A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of: providing an etching chamber having a surface defining a wall of the etching chamber where said surface is coated with Sc 2 O 3 ; heating said surface to a temperature between 290° C. to 310° C. to prevent the formation of a deposition film on said surface during etching; and generating a plasma for etching using a fluorocarbon gas.
Claim 24
Independent Claim
79 words
A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of: providing an etching chamber having a surface defining a wall of the etching chamber where said surface is coated with Y 2 O 3 ; heating said surface to a temperature between 290° C. to 310° C. to prevent the formation of a deposition film on said surface during etching; and generating a plasma for etching using a fluorocarbon gas.
Claim 25
Independent Claim
79 words
A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of: providing an etching chamber having a surface defining a wall of the etching chamber where said surface is coated with Y 2 O 3 ; heating said surface to a temperature between 290° C. to 310° C. to prevent the formation of a deposition film on said surface during etching; and generating a plasma for etching using a fluorocarbon gas.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-06-09 | 2000-12-09 | 2001-06-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-06-09 | 2004-12-09 | 2005-06-10 | $3760.00 | Window Closed / Lapsed |
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