US5630904A
Expired / Lapsed
US
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Stripping and cleaning agent for removing dry-etching and photoresist residues from a semiconductor substrate, and a method for forming a line pattern using the stripping and cleaning agent
Assignee: Mitsubishi Gas Chemical Co Inc
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Filing: 1995-03-27
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Granted: 1997-05-20
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Expires: 2015-03-27
Abstract
Abstract Stripping and cleaning agent for removing dry-etching photoresist residues, and a method for forming an aluminum based line pattern using the stripping and cleaning agent. The stripping and cleaning agent contains (a) from 5 to 50% by weight of an organocarboxlic ammonium salt or an amine carboxylate, represented by the formula [R 1 ]m[COONH p (R 2 )q]n, where R 1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms; R 2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms; m and n independently are integers of from 1 to 4, p is integer of from 1 to 4, q is integer of from 1 to 3, and p+q=4 and (b) from 0.5 to 15% by weight of a fluorine compound. The inventive method is advantageously applied to treating a dry-etched semiconductor substrate with the stripping and cleaning agent. The semiconductor substrate comprises a semiconductor wafer having thereon a conductive layer containing aluminum. The conductive layer is dry-etched through a patterned photoresist mask to form a wiring body having etched side walls. The dry etching forms a side wall protection film on the side walls. In accordance with the inventive method, the side wall protection film and other resist residues are completely released without corroding the wiring body.
Inventors
- 👤 Tetsuo Aoyama
- 👤 Rieko Nakano
- 👤 Akira Ishihama
- 👤 Koichiro Adachi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:54
CPC Classifications
H; H10; H10P; H10P52/00; H10P70/00; H10P70/20; H10P70/27; H10P70/273; G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; G03F7/422; G03F7/425; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/269; H10P70/23; H10P70/234; Y; Y10; Y10S; Y10S438/00; Y10S438/963
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
175 words
A method for forming a line pattern comprising: providing a semiconductor substrate comprising a semiconductor wafer having thereon a conductive layer containing aluminum; dry etching the conductive layer through a patterned photoresist mask to form a wiring body having etched side walls and a side wall protection film on said side walls; and releasing the side wall protection film by treating the dry-etched semiconductor substrate with a stripping and cleaning agent comprising: (a) from 5 to 50% by weight of an organocarboxylic ammonium salt or an amine carboxylate, represented by the formula [R 1 ]m[COONH p (R 2 )q]n, where R 1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms; R 2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms; m and n independently are integers of from 1 to 4, p is an integer of from 1 to 4, q is an integer of from 1 to 3, and p+q=4; and (b) from 0.5 to 15% by weight of a fluorine compound.
Claim 2
Independent Claim
175 words
A method for forming a line pattern comprising: providing a semiconductor substrate comprising a semiconductor wafer having thereon a conductive layer containing aluminum; dry etching the conductive layer through a patterned photoresist mask to form a wiring body having etched side walls and a side wall protection film on said side walls; and releasing the side wall protection film by treating the dry-etched semiconductor substrate with a stripping and cleaning agent comprising: (a) from 5 to 50% by weight of an organocarboxylic ammonium salt or an amine carboxylate, represented by the formula [R 1 ]m[COONH p (R 2 )q]n, where R 1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms; R 2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms; m and n independently are integers of from 1 to 4, p is an integer of from 1 to 4, q is an integer of from 1 to 3, and p+q=4; and (b) from 0.5 to 15% by weight of a fluorine compound.
Claim 3
Dependent Claim
37 words
The method of claim 1, wherein the stripping and cleaning agent further comprises (c) from 1 to 50% by weight of at least one organic solvent selected from the group consisting amides, lactones, nitriles, alcohols and esters.
Claim 4
Dependent Claim
25 words
The method of claim 1, wherein the dry-etching gas is selected from the group consisting of chlorine gas, hydrogen bromide gas and boron trichloride gas.
Claim 5
Dependent Claim
68 words
The method of claim 1, wherein the organocarboxylic ammonium salt is selected from the group consisting of ammonium formate, ammonium acetate, ammonium propionate, ammonium butyrate, ammonium valerate, ammonium heptanate, ammonium laurate, ammonium palmitate, ammonium stearate, ammonium acrylate, ammonium crotonate, ammonium methacrylate, ammonium oxalate, ammonium malonate, ammonium maleate, ammonium fumarate, ammonium succinate, ammonium adipate, ammonium azelate, ammonium sebacate, ammonium benzoate, ammonium toluate, ammonium phthalate, ammonium trimellitate and ammonium pyromellitate.
Claim 6
Dependent Claim
54 words
The method of claim 1, wherein the organocarboxylic amine salt is selected from the group consisting of monomethylamine formate, dimethylamine formate, trimethylamine formate, monoethylamine formate, diethylamine formate, triethylamine formate, monoethylamine acetate, dimethylamine acetate, trimethylamine acetate, monoethylamine acetate, diethylamine acetate, triethylamine acetate, monomethylamine benzoate, dimethylamine benzoate, trimethylamine benzoate, monoethylamine benzoate, diethylamine benzoate and triethylamine benzoate.
Claim 7
Dependent Claim
26 words
The method of claim 1, wherein the organocarboxylic ammonium salt is selected from the group consisting of ammonium acetate, ammonium propionate, ammonium phthalate and ammonium formate.
Claim 8
Dependent Claim
24 words
The method of claim 1, wherein the organocarboxylic amine salt is selected from the group consisting of monomethylamine formate, triethylamine formate and monomethylamine benzoate.
Claim 9
Dependent Claim
25 words
The method of claim 1, wherein the fluorine compound is selected from the group consisting of hydrofluoric acid, ammonium fluoride, ammonium hydrofluoride and ammonium borofluoride.
Claim 10
Dependent Claim
29 words
The method of claim 1, wherein the organic solvent is selected from the group consisting of dimethylformamide, dimethylacetoamide, N-methylpyrrolidone, γ-butyrolactone, methanol, ethanol, isopropanol, ethyleneglycol, methyl acetate and ethyl acetate.
Claim 11
Dependent Claim
22 words
The method of claim 1, wherein the organic solvent is selected from the group consisting of dimethylformamide, ethyleneglycol dimethylacetoamide and N-methyl pyrrolidone.
Claim 12
Dependent Claim
138 words
A stripping and cleaning agent for removing dry-etching photoresist residues from a semiconductor substrate having thereon an aluminum based wiring body formed in a dry-etching step using a photoresist pattern as an etching mask, comprising: (a) from 5 to 50% by weight of an organocarboxylic ammonium salt or an amine carboxylate, represented by the formula [R 1 ]m[COONH p (R 2 )q]n, where R 1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms; R 2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms; m and n independently are integers of from 1 to 4, p is an integer of from 1 to 4, q is an integer of from 1 to 3, and p+q=4; and (b) from 0.5 to 15% by weight of a fluorine compound.
Claim 13
Dependent Claim
138 words
A stripping and cleaning agent for removing dry-etching photoresist residues from a semiconductor substrate having thereon an aluminum based wiring body formed in a dry-etching step using a photoresist pattern as an etching mask, comprising: (a) from 5 to 50% by weight of an organocarboxylic ammonium salt or an amine carboxylate, represented by the formula [R 1 ]m[COONH p (R 2 )q]n, where R 1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms; R 2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms; m and n independently are integers of from 1 to 4, p is an integer of from 1 to 4, q is an integer of from 1 to 3, and p+q=4; and (b) from 0.5 to 15% by weight of a fluorine compound.
Claim 14
Dependent Claim
162 words
A stripping and cleaning agent for removing dry-etching photoresist residues from a semiconductor substrate having thereon an aluminum based wiring body formed in a dry-etching step using a photoresist pattern as an etching mask, comprising: (a) from 5 to 50% by weight of an organocarboxylic ammonium salt or an amine carboxylate, represented by the formula [R 1 ]m[COONH p (R 2 )q]n, where R 1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms; R 2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms; m and n independently are integers of from 1 to 4, p is an integer of from 1 to 4, q is an integer of from 1 to 3, and p+q=4; (b) from 0.5 to 15% by weight of a fluorine compound; and (c) from 1 to 50% by weight of at least one organic solvent selected from the group consisting amides, lactones, nitriles, alcohols and esters.
Claim 15
Dependent Claim
162 words
A stripping and cleaning agent for removing dry-etching photoresist residues from a semiconductor substrate having thereon an aluminum based wiring body formed in a dry-etching step using a photoresist pattern as an etching mask, comprising: (a) from 5 to 50% by weight of an organocarboxylic ammonium salt or an amine carboxylate, represented by the formula [R 1 ]m[COONH p (R 2 )q]n, where R 1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms; R 2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms; m and n independently are integers of from 1 to 4, p is an integer of from 1 to 4, q is an integer of from 1 to 3, and p+q=4; (b) from 0.5 to 15% by weight of a fluorine compound; and (c) from 1 to 50% by weight of at least one organic solvent selected from the group consisting amides, lactones, nitriles, alcohols and esters.
Claim 16
Dependent Claim
79 words
The stripping and cleaning agent of claim 11 or 12, wherein component (a) is said organocarboxylic ammonium salt and said salt is selected from the group consisting of ammonium formate, ammonium acetate, ammonium propionate, ammonium butyrate, ammonium valerate, ammonium heptanate, ammonium laurate, ammonium palmitate, ammonium stearate, ammonium acrylate, ammonium crotonate, ammonium methacrylate, ammonium oxalate, ammonium malonate, ammonium maleate, ammonium fumarate, ammonium succinate, ammonium adipate, ammonium azelate, ammonium sebacate, ammonium benzoate, ammonium toluate, ammonium phthalate, ammonium trimellitate and ammonium pyromellitate.
Claim 17
Dependent Claim
65 words
The stripping and cleaning agent of claim 11 or 12, wherein component (a) is said organocarboxylic amine salt and said salt is selected from the group consisting of monomethylamine formate, dimethylamine formate, trimethylamine formate, monoethylamine formate, diethylamine formate, triethylamine formate, monoethylamine acetate, dimethylamine acetate, trimethylamine acetate, monoethylamine acetate, diethylamine acetate, triethylamine acetate, monomethylamine benzoate, dimethylamine benzoate, trimethylamine benzoate, monoethylamine benzoate, diethylamine benzoate and triethylamine benzoate.
Claim 18
Dependent Claim
37 words
The stripping and cleaning agent of claim 11 or 12, wherein component (a) is said organocarboxylic ammonium salt and said salt is selected from the group consisting of ammonium acetate, ammonium propionate, ammonium phthalate and ammonium formate.
Claim 19
Dependent Claim
35 words
The stripping and cleaning agent of claim 11 or 12, wherein component (a) is said organocarboxylic amine salt and said salt is selected from the group consisting of monomethylamine formate, triethylamine formate and monomethylamine benzoate.
Claim 20
Dependent Claim
30 words
The stripping and cleaning agent of claim 11 or 12, wherein the fluorine compound is selected from the group consisting of hydrofluoric acid, ammonium fluoride, ammonium hydrofluoride and ammonium borofluoride.
Claim 21
Dependent Claim
34 words
The stripping and cleaning agent of claim 11 or 12, wherein the organic solvent is selected from the group consisting of dimethylformamide, dimethylacetoamide, N-methylpyrrolidone, γ-butyrolactone, methanol, ethanol, isopropanol, ethyleneglycol, methyl acetate and ethyl acetate.
Claim 22
Dependent Claim
27 words
The stripping and cleaning agent of claim 11 or 12, wherein the organic solvent is selected from the group consisting of dimethylformamide, ethyleneglycol dimethylacetoamide and N-methyl pyrrolidone.
References Cited (Backward Citations)
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