US5627427A — Silicon tip field emission cathodes

Claim 1

Independent Claim 202 words

A densely packed micro-cathode field emitter array for producing high current density emissions at low voltage, comprising: a silicon substrate; a plurality of upwardly and inwardly tapered, generally conical silicon emitter tips arranged in a predetermined array and having bases integral with said substrate, said upwardly extending tips having terminal diameters of less than 20 nm, the height of each said tip being between about 500 nm and 900 nm with adjacent tips having a spacing of between about 1.0 and 10.0 micrometers; a generally planar, horizontal gate electrode metal layer supported on and spaced from said substrate and including an upwardly extending, inwardly tapering dimple portion spaced closely to and coaxial with each of said tips, each dimple portion being formed from said metal layer and having an upper end forming an aperture surrounding a corresponding emitter tip, each said aperture being self-aligned with its corresponding tip and being closely spaced thereto to form a gap of uniform width between each tip and its corresponding dimple, with the tip extending upwardly through its corresponding aperture by a predeterminable distance; and means dividing said gate electrode to electrically separate selected emitter tips within said array from other emitter tips within said array.

Claim 2

Dependent Claim 202 words

A densely packed micro-cathode field emitter array for producing high current density emissions at low voltage, comprising: a silicon substrate; a plurality of upwardly and inwardly tapered, generally conical silicon emitter tips arranged in a predetermined array and having bases integral with said substrate, said upwardly extending tips having terminal diameters of less than 20 nm, the height of each said tip being between about 500 nm and 900 nm with adjacent tips having a spacing of between about 1.0 and 10.0 micrometers; a generally planar, horizontal gate electrode metal layer supported on and spaced from said substrate and including an upwardly extending, inwardly tapering dimple portion spaced closely to and coaxial with each of said tips, each dimple portion being formed from said metal layer and having an upper end forming an aperture surrounding a corresponding emitter tip, each said aperture being self-aligned with its corresponding tip and being closely spaced thereto to form a gap of uniform width between each tip and its corresponding dimple, with the tip extending upwardly through its corresponding aperture by a predeterminable distance; and means dividing said gate electrode to electrically separate selected emitter tips within said array from other emitter tips within said array.

Claim 3

Dependent Claim 23 words

The array of claim 1, further including an electrically insulating layer on said substrate supporting said metal gate electrode and said dimple portions.

Claim 4

Dependent Claim 186 words

A silicon tip field emission micro-cathode, comprising: a silicon substrate having a top surface; a silicon emitter tip integral with said silicon substrate and extending upwardly from the top surface thereof, said tip having a base portion at said substrate and tapering inwardly and upwardly from said base portion to a terminal tip end; an electrically insulating layer on said substrate top surface and covering at least the base portion of said tip, said insulating layer having a predetermined thickness on said base portion; a metal gate electrode layer on said insulating layer and surrounding said base portion, said metal gate electrode layer including an upwardly extending, inwardly tapering dimple portion spaced from and surrounding said tip below said terminal end thereof, said dimple portion having an open upper end forming an aperture surrounding and self-aligned with said tip and spaced therefrom by a gap determined by the thickness of said insulating layer on said tip base portion, the diameter of said aperture being determined by the height of said open upper end of said dimple portion with respect to the terminal end of said tip.

Claim 5

Dependent Claim 186 words

A silicon tip field emission micro-cathode, comprising: a silicon substrate having a top surface; a silicon emitter tip integral with said silicon substrate and extending upwardly from the top surface thereof, said tip having a base portion at said substrate and tapering inwardly and upwardly from said base portion to a terminal tip end; an electrically insulating layer on said substrate top surface and covering at least the base portion of said tip, said insulating layer having a predetermined thickness on said base portion; a metal gate electrode layer on said insulating layer and surrounding said base portion, said metal gate electrode layer including an upwardly extending, inwardly tapering dimple portion spaced from and surrounding said tip below said terminal end thereof, said dimple portion having an open upper end forming an aperture surrounding and self-aligned with said tip and spaced therefrom by a gap determined by the thickness of said insulating layer on said tip base portion, the diameter of said aperture being determined by the height of said open upper end of said dimple portion with respect to the terminal end of said tip.

Claim 6

Dependent Claim 22 words

The cathode of claim 3, wherein said dimple is closely spaced to said tip and is accurately aligned therewith to be coaxial.

Claim 7

Dependent Claim 13 words

The cathode of claim 4, wherein said tip and said dimple are conical.

Claim 8

Dependent Claim 57 words

The cathode of claim 3, wherein said insulating layer extends upwardly around said tip a first predetermined distance and wherein said metal gate electrode dimple portion extends upwardly around said tip a second predetermined distance which is greater than said first predetermined distance, whereby said open upper end of said dimple portion extends above said insulating layer.

Claim 9

Dependent Claim 22 words

The cathode of claim 6, further including a metal layer having selected emission characteristic encapsulating only said terminal end of said tip.

Claim 10

Dependent Claim 18 words

The cathode of claim 7, wherein said aperture is coaxial with said terminal end portion of said tip.

Claim 11

Dependent Claim 33 words

The cathode of claim 6 wherein said tip has a height of between about 500 nm and 900 nm and wherein said tip terminal end has a diameter of less than 20 nm.

Claim 12

Dependent Claim 37 words

The cathode of claim 9, further including a multiplicity of cathodes on said substrate spaced to form a cathode array, each said cathode having a corresponding gate electrode metal layer including a dimple surrounding a corresponding tip.

Claim 13

Dependent Claim 37 words

The array of claim 10, wherein said tips of said multiplicity of cathodes are arranged in a pattern on said substrate to define said array, with adjacent tips being spaced apart by between 1.0 and 10.0 micrometers.

Claim 14

Dependent Claim 25 words

The array of claim 11, wherein said gate electrode metal layer is divided to electrically separate selected emitters in said array from other said emitters.

Claim 15

Dependent Claim 19 words

The array of claim 11, wherein said tips of said multiplicity of cathodes are uniform in height and diameter.

Claim 16

Dependent Claim 22 words

The cathode of claim 3, further including a layer of silicide on said tip for reducing the work function of said cathode.

Claim 17

Dependent Claim 22 words

The cathode of claim 14, wherein said dimple is closely spaced to said tip and is accurately aligned therewith to be coaxial.

Claim 18

Dependent Claim 13 words

The cathode of claim 15, wherein said tip and said dimple are conical.

Claim 19

Dependent Claim 57 words

The cathode of claim 14, wherein said insulating layer extends upwardly around said tip a first predetermined distance and wherein said metal gate electrode dimple portion extends upwardly around said tip a second predetermined distance which is greater than said first predetermined distance, whereby said open upper end of said dimple portion extends above said insulating layer.

Claim 20

Dependent Claim 18 words

The cathode of claim 17, wherein said aperture is coaxial with said terminal end portion of said tip.

Claim 21

Dependent Claim 33 words

The cathode of claim 17, wherein said tip has a height of between about 500 nm and 900 nm and wherein said tip terminal end has a diameter of less than 20 nm.

Claim 22

Dependent Claim 37 words

The cathode of claim 19, further including a multiplicity of cathodes on said substrate spaced to form a cathode array, each said cathode having a corresponding gate electrode metal layer including a dimple surrounding a corresponding tip.

Claim 23

Dependent Claim 37 words

The array of claim 20, wherein said tips of said multiplicity of cathodes are arranged in a pattern on said substrate to define said array, with adjacent tips being spaced apart by between 1.0 and 10.0 micrometers.

Claim 24

Dependent Claim 25 words

The array of claim 21, wherein said gate electrode metal layer is divided to electrically separate selected emitters in said array from other said emitters.

Claim 25

Dependent Claim 19 words

The array of claim 21, wherein said tips of said multiplicity of cathodes are uniform in height and diameter.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2000-05-05	2000-11-04	2001-05-06	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2004-05-05	2004-11-04	2005-05-06	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2008-05-05	2008-11-04	2009-05-06	$7700.00	Window Closed / Lapsed

Silicon tip field emission cathodes

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