Patent US5627111A successfully refreshed from Google Patents.
US5627111A
Expired / Lapsed
US
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Electron emitting device and process for producing the same
Assignee: Canon Inc
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Filing: 1995-06-07
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Granted: 1997-05-06
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Expires: 2015-06-07
Abstract
Abstract An electron emitting device causes electron emission by a current supply in a coarse resistor film. The coarse thin resistor film is composed at least of a coarse thin silicon film.
Inventors
- 👤 Takeo Tsukamoto
- 👤 Akira Shimizu
- 👤 Akira Suzuki
- 👤 Masao Sugata
- 👤 Isamu Shimoda
- 👤 Masahiko Okunuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 04:06
CPC Classifications
H; H01; H01J; H01J1/00; H01J1/02; H01J1/30; H01J1/316; H01J1/13; H01J1/14; H01J9/00; H01J9/02; H01J9/04; H01J9/042; H01J2201/00; H01J2201/30; H01J2201/316; H01J2201/3165
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
69 words
A process for producing an electron emitting device provided with a resistor film composed at least of a crystalline silicon film, comprising the steps of: forming, on a silicon layer, an aluminum layer thicker than said silicon layer; effecting a heat treatment to cause silicon in said silicon layer to crystallize locally in said aluminum layer; and eliminating aluminum in said aluminum layer, thereby forming said crystalline silicon film.
Claim 2
Dependent Claim
69 words
A process for producing an electron emitting device provided with a resistor film composed at least of a crystalline silicon film, comprising the steps of: forming, on a silicon layer, an aluminum layer thicker than said silicon layer; effecting a heat treatment to cause silicon in said silicon layer to crystallize locally in said aluminum layer; and eliminating aluminum in said aluminum layer, thereby forming said crystalline silicon film.
Claim 3
Dependent Claim
45 words
The process for producing the electron emitting device according to claim 1, wherein said resistor film is obtained by forming a layer of a work function reducing material on the surface of said crystalline silicon film, then effecting a heat treatment and a surface oxidation.
Claim 4
Dependent Claim
22 words
The process for producing the electron emitting device according to claim 2, wherein said work function reducing material is an alkali metal.
Claim 5
Dependent Claim
21 words
The process for producing the electron emitting device according to claim 3 wherein said silicon layer is a polycrystalline silicon layer.
Claim 6
Dependent Claim
21 words
The process for producing the electron emitting device according to claim 2, wherein said silicon layer is a polycrystalline silicon layer.
Claim 7
Dependent Claim
21 words
The process for producing the electron emitting device according to claim 1, wherein said silicon layer is a polycrystalline silicon layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-05-05 | 2000-11-04 | 2001-05-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-05-05 | 2004-11-04 | 2005-05-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-05-05 | 2008-11-04 | 2009-05-06 | $7700.00 | Window Closed / Lapsed |