US5625204A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Compound semiconductors and a method for thin film growth
Assignee: Texas Instruments Inc
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Filing: 1995-06-07
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Granted: 1997-04-29
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Expires: 2015-06-07
Abstract
Abstract A molecular beam epitaxy (MBE) system (10) is provided to grow thin film, epitaxy layers (44, 46, 48, 50) on compound semiconductor substrates (40). A mass spectrometer detector (95) is used to monitor and control the flux from selected sources (21, 23, 25, 27) within the MBE system (10). A uniform layer of indium gallium arsenide (46, 50) may be grown on a semiconductor substrate (40) by controlling the indium flux with respect to substrate (40) temperature and time. An epitaxy layer (46) of indium gallium arsenide with uniform mole fraction concentration and reduced lattice strain is produced.
Inventors
- 👤 Yung-Chung Kao
- 👤 Francis G. Celii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:22
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; B; B24; B24B; B24B37/00; B24B37/005; B24B37/013; C30B23/00; C30B23/002; C30B29/42; H; H10; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P74/00; H10P74/23; H10P74/238
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
65 words
A semiconductor device, comprising: one or more layers of gallium arsenide formed over a gallium arsenide substrate; an indium gallium arsenide layer formed over said one or more layers of gallium arsenide; a cap layer of gallium arsenide having a thickness of twelve angstroms or less and formed over said indium gallium arsenide layer; and an aluminum gallium arsenide layer formed over said cap layer.
Claim 2
Dependent Claim
65 words
A semiconductor device, comprising: one or more layers of gallium arsenide formed over a gallium arsenide substrate; an indium gallium arsenide layer formed over said one or more layers of gallium arsenide; a cap layer of gallium arsenide having a thickness of twelve angstroms or less and formed over said indium gallium arsenide layer; and an aluminum gallium arsenide layer formed over said cap layer.
Claim 3
Dependent Claim
22 words
The semiconductor device as defined in claim 1, further comprising a second thin cap layer formed over said aluminum gallium arsenide layer.
Claim 4
Dependent Claim
19 words
The semiconductor device of claim 1, wherein said indium gallium arsenide layer is characterized by a uniform indium composition.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-04-28 | 2000-10-28 | 2001-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-28 | 2004-10-28 | 2005-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-28 | 2008-10-28 | 2009-04-29 | $7700.00 | Window Closed / Lapsed |