Patent US5624303A successfully refreshed from Google Patents.
US5624303A
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Polishing pad and a method for making a polishing pad with covalently bonded particles
Assignee: Round Rock Research LLC
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Filing: 1996-01-22
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Granted: 1997-04-29
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Expires: 2016-01-22
Abstract
Abstract The present invention is a polishing pad for use in chemical-mechanical planarization of semiconductor wafers, and a method for making the polishing pad. The polishing pad has a body, molecular bonding links, and abrasive particles dispersed substantially uniformly throughout the body. The body is made from a polymeric matrix material and the molecular bonding links are covalently bonded to the matrix material. Substantially all of the abrasive particles are covalently bonded to at least one molecular bonding link. The molecular bonding links securely affix the abrasive particles to the matrix material to enhance the uniformity, of the distribution of the abrasive particles throughout the pad and to substantially prevent the abrasive particles from breaking away from the pad.
Inventors
- 👤 Karl M. Robinson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 19:45
CPC Classifications
B; B24; B24B; B24B37/00; B24B37/11; B24B37/20; B24B37/24; B24B37/245; B24D; B24D3/00; B24D3/02; B24D3/20; B24D3/28; B24D3/34; Y; Y10; Y10S; Y10S451/00; Y10S451/921
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
76 words
A semiconductor wafer polishing pad comprising: a body made from a polymeric matrix material; bonding molecules covalently bonded to the matrix material; and abrasive particles covalently bonded to the bonding molecules in a substantially uniform distribution throughout the body, the bonding molecules affixing the abrasive particles to the matrix material in a manner capable of substantially maintaining the affixation between the abrasive particles and the matrix material in the presence of an electrostatic chemical-mechanical planarization slurry.
Claim 2
Dependent Claim
76 words
A semiconductor wafer polishing pad comprising: a body made from a polymeric matrix material; bonding molecules covalently bonded to the matrix material; and abrasive particles covalently bonded to the bonding molecules in a substantially uniform distribution throughout the body, the bonding molecules affixing the abrasive particles to the matrix material in a manner capable of substantially maintaining the affixation between the abrasive particles and the matrix material in the presence of an electrostatic chemical-mechanical planarization slurry.
Claim 3
Dependent Claim
67 words
The polishing pad of claim 1 wherein each bonding molecule is comprised of a reactive terminus group and a particle affixing group, the reactive terminus group being a molecule segment at one end of the bonding molecule that covalently bonds to the matrix material and the particle affixing group being another molecule segment at another end of the bonding molecule that covalently bonds to an abrasive particle.
Claim 4
Dependent Claim
14 words
The polishing pad of claim 1 wherein the matrix material is made from polyurethane.
Claim 5
Dependent Claim
15 words
The polishing pad of claim 1 wherein the abrasive particles are made from silicon dioxide.
Claim 6
Dependent Claim
15 words
The polishing pad of claim 1 wherein the abrasive particles are made from aluminum oxide.
Claim 7
Dependent Claim
23 words
The polishing pad of claim 2 wherein the matrix material is made from polyurethane and the abrasive particles are made from silicon dioxide.
Claim 8
Dependent Claim
34 words
The polishing pad of claim 6 wherein the reactive terminus group is COOH, and the particle affixing group is a trichlorosilane, the trichlorosilane covalently bonding with a hydroxylated silicon surface on the abrasive particles.
Claim 9
Dependent Claim
123 words
A planarizing machine for chemical-mechanical planarization of a semiconductor wafer, comprising: a platen; a polishing pad positioned on the platen, the polishing pad having a body made from a polymeric matrix material, bonding molecules covalently bonded to the matrix material, and abrasive particles covalently bonded to the bonding molecules throughout the body, the bonding molecules affixing the abrasive particles to the matrix material during chemical-mechanical planarization in the presence of an electrostatic chemical-mechanical planarizing slurry; and a wafer carrier positionable over the polishing pad, the wafer being attachable to the wafer carrier, wherein at least one of the platen or the wafer carrier is moveable to engage the wafer with the polishing pad and to impart motion between the wafer and polishing pad.
Claim 10
Dependent Claim
123 words
A planarizing machine for chemical-mechanical planarization of a semiconductor wafer, comprising: a platen; a polishing pad positioned on the platen, the polishing pad having a body made from a polymeric matrix material, bonding molecules covalently bonded to the matrix material, and abrasive particles covalently bonded to the bonding molecules throughout the body, the bonding molecules affixing the abrasive particles to the matrix material during chemical-mechanical planarization in the presence of an electrostatic chemical-mechanical planarizing slurry; and a wafer carrier positionable over the polishing pad, the wafer being attachable to the wafer carrier, wherein at least one of the platen or the wafer carrier is moveable to engage the wafer with the polishing pad and to impart motion between the wafer and polishing pad.
Claim 11
Dependent Claim
67 words
The planarizing machine of claim 8 wherein each bonding molecule is comprised of a reactive terminus group and a particle affixing group, the reactive terminus group being a molecule segment at one end of the bonding molecule that covalently bonds to the matrix material and the particle affixing group being another molecule segment at another end of the bonding molecule that covalently bonds to an abrasive particle.
Claim 12
Dependent Claim
14 words
The planarizing machine of claim 8 wherein the matrix material is made from polyurethane.
Claim 13
Dependent Claim
15 words
The planarizing machine of claim 8 wherein the abrasive particles are made from silicon dioxide.
Claim 14
Dependent Claim
15 words
The planarizing machine of claim 8 wherein the abrasive particles are made from aluminum oxide.
Claim 15
Dependent Claim
23 words
The planarizing machine of claim 9 wherein the matrix material is made from polyurethane and the abrasive particles are made from silicon dioxide.
Claim 16
Dependent Claim
34 words
The planarizing machine of claim 13 wherein the reactive terminus group is COOH, and the particle affixing group is a trichlorosilane, the trichlorosilane covalently bonding with a hydroxylated silicon surface on the abrasive particles.
Claim 17
Dependent Claim
44 words
A polishing pad, comprising: a body made from a polymeric matrix material; non-hydrolyzed bonding molecules covalently bonded to the matrix material; and abrasive particles covalently bonded to the bonding molecules, the bonding molecules affixing the abrasive particles to the matrix material during chemical-mechanical planarization.
Claim 18
Dependent Claim
44 words
A polishing pad, comprising: a body made from a polymeric matrix material; non-hydrolyzed bonding molecules covalently bonded to the matrix material; and abrasive particles covalently bonded to the bonding molecules, the bonding molecules affixing the abrasive particles to the matrix material during chemical-mechanical planarization.
Claim 19
Dependent Claim
20 words
The polishing pad of claim 15 wherein the abrasive particles have a coat of bonding molecules applied by vapor deposition.
Claim 20
Dependent Claim
67 words
The polishing pad of claim 15 wherein each bonding molecule is comprised of a reactive terminus group and a particle affixing group, the reactive terminus group being a molecule segment at one end of the bonding molecule that covalently bonds to the matrix material and the particle affixing group being another molecule segment at another end of the bonding molecule that covalently bonds to an abrasive particle.
Claim 21
Dependent Claim
76 words
The polishing pad of claim 15 wherein the matrix material is polyurethane and the abrasive particles are silicon dioxide, and wherein each bonding molecule has a reactive terminus group of COOH and a particle affixing group of trichlorosilane, the reactive terminus group being a molecule segment at one end of the bonding molecule that covalently bonds to the matrix material and the particle affixing group being another molecule segment at another end of the bonding molecule.
Claim 22
Dependent Claim
74 words
A polishing pad, comprising: a body made from a polymeric matrix material, the body being between approximately 50% and 90% by weight of the polishing pad; non-hydrolyzed bonding molecules covalently bonded to the matrix material; and abrasive particles covalently bonded to the bonding molecules, the bonding molecules affixing the abrasive particles to the matrix material during chemical-mechanical planarization, and the abrasive particles being between approximately 10% and 50% by weight of the polishing pad.
Claim 23
Dependent Claim
74 words
A polishing pad, comprising: a body made from a polymeric matrix material, the body being between approximately 50% and 90% by weight of the polishing pad; non-hydrolyzed bonding molecules covalently bonded to the matrix material; and abrasive particles covalently bonded to the bonding molecules, the bonding molecules affixing the abrasive particles to the matrix material during chemical-mechanical planarization, and the abrasive particles being between approximately 10% and 50% by weight of the polishing pad.
Claim 24
Dependent Claim
20 words
The polishing pad of claim 19 wherein the abrasive particles have a coat of bonding molecules applied by vapor deposition.
Claim 25
Dependent Claim
22 words
The polishing pad of claim 19 wherein the abrasive particles are between approximately 15% and 25% by weight of the polishing pad.
Claim 26
Dependent Claim
84 words
The polishing pad of claim 19 wherein each bonding molecule is comprised of a reactive terminus group and a particle affixing group, the reactive terminus group being a molecule segment at one end of the bonding molecule that covalently bonds to the matrix material and the particle affixing group being another molecule segment at another end of the bonding molecule that covalently bonds to an abrasive particle, and wherein the abrasive particles are between approximately 15% and 25% by weight of the polishing pad.
Claim 27
Dependent Claim
85 words
The polishing pad of claim 19 wherein the matrix material is polyurethane and the abrasive particles are silicon dioxide, and wherein each bonding molecule is comprised of a reactive terminus group of COOH and a particle affixing group of trichlorosilane, the reactive terminus group being a molecule segment at one end of the bonding molecule that covalently bonds to the matrix material and the particle affixing group being another molecule segment at another end of the bonding molecule that covalently bonds to an abrasive particle.
Claim 28
Dependent Claim
67 words
A polishing pad, comprising: a body made from a polymeric matrix material; non-hydrolyzed bonding molecules covalently bonded to the matrix material; and abrasive particles having an average particle size less than 0.15 μm, the abrasive particles being covalently bonded to the bonding molecules, and the bonding molecules affixing the abrasive particles to the matrix material during chemical-mechanical planarization in the presence of an electrostatic chemical-mechanical planarization solution.
Claim 29
Dependent Claim
67 words
A polishing pad, comprising: a body made from a polymeric matrix material; non-hydrolyzed bonding molecules covalently bonded to the matrix material; and abrasive particles having an average particle size less than 0.15 μm, the abrasive particles being covalently bonded to the bonding molecules, and the bonding molecules affixing the abrasive particles to the matrix material during chemical-mechanical planarization in the presence of an electrostatic chemical-mechanical planarization solution.
Claim 30
Dependent Claim
19 words
The polishing pad of claim 24 wherein the abrasive particles have an average particle size less than 0.1 μm.
Claim 31
Dependent Claim
37 words
The polishing pad of claim 24 wherein the body is between approximately 50% and 90% by weight of the polishing pad and the abrasive particles are between approximately 10% and 50% by weight of the polishing pad.
Claim 32
Dependent Claim
67 words
The polishing pad of claim 26 wherein each bonding molecule is comprised of a reactive terminus group and a particle affixing group, the reactive terminus group being a molecule segment at one end of the bonding molecule that covalently bonds to the matrix material and the particle affixing group being another molecule segment at another end of the bonding molecule that covalently bonds to an abrasive particle.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-04-28 | 2000-10-28 | 2001-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-28 | 2004-10-28 | 2005-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-28 | 2008-10-28 | 2009-04-29 | $7700.00 | Window Closed / Lapsed |