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US5620131A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of solder bonding

Assignee: Avago Technologies International Sales Pte Ltd
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Filing: 1995-06-15
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Granted: 1997-04-15
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Expires: 2015-06-15
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Abstract

Abstract During formation of solder bumps on the bonding pads of a component, a two-layer dam structure is utilized to block solder from flowing from the pads to adjacent portions of a metallization pattern. After the solder bumps are formed, the top dam layer is dissolved, whereby any solder debris present on the top dam layer is also removed from the structure. The bottom dam layer, which remains intact during the removal step, serves to confine solder movement during a subsequent bonding operation in which the solder bumps are reflowed to cause them to adhere to aligned pads on another component.

Inventors

  • 👤 Casey F. Kane
  • 👤 Joseph Shmulovich

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 13:33
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/30; H05K3/32; H05K3/34; H05K3/3465; H10; H10W; H10W72/00; H10W72/20; H05K3/3489; H10W72/01; H10W72/012; H10W72/01208; H10W72/251; H10W72/252; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952

Claims Analysis

Total Claims: 14
Claim 1
Independent Claim 214 words
A method of solder bonding comprising the steps of forming a conductive metallization pattern, including bonding pads, on the surface of a component, forming a two-layer dam structure, including a top sacrificial dam layer and a bottom permanent dam layer, on each of said pads to define a portion of each pad to which solder is to be adhered, each of said top and bottom dam layers being characterized by being substantially non-wettable by solder, said dam structure being adapted to prevent molten solder from flowing from said defined pad portion to adjacent portions of the metallization pattern during subsequent solder-bump-formation and bonding steps, forming respective solder bumps on said defined pad portions, said top sacrificial dam layer on each pad portion being adapted during solder-bump formation to prevent molten solder from flowing from said defined pad portion to adjacent portions of the metallization pattern, removing the top sacrificial layer of said dam structure, and, while maintaining conductive elements of an associated component in respective contact with said solder bumps, heating said solder bumps to bond said respective elements to said defined pad portions, said bottom dam layer on each pad portion being adapted during bonding to prevent molten solder from flowing from said defined pad portion to adjacent portions of the metallization pattern.
Claim 2
Independent Claim 214 words
A method of solder bonding comprising the steps of forming a conductive metallization pattern, including bonding pads, on the surface of a component, forming a two-layer dam structure, including a top sacrificial dam layer and a bottom permanent dam layer, on each of said pads to define a portion of each pad to which solder is to be adhered, each of said top and bottom dam layers being characterized by being substantially non-wettable by solder, said dam structure being adapted to prevent molten solder from flowing from said defined pad portion to adjacent portions of the metallization pattern during subsequent solder-bump-formation and bonding steps, forming respective solder bumps on said defined pad portions, said top sacrificial dam layer on each pad portion being adapted during solder-bump formation to prevent molten solder from flowing from said defined pad portion to adjacent portions of the metallization pattern, removing the top sacrificial layer of said dam structure, and, while maintaining conductive elements of an associated component in respective contact with said solder bumps, heating said solder bumps to bond said respective elements to said defined pad portions, said bottom dam layer on each pad portion being adapted during bonding to prevent molten solder from flowing from said defined pad portion to adjacent portions of the metallization pattern.
Claim 3
Dependent Claim 37 words
A method as in claim 1 wherein said removing step comprises etching said top sacrificial layer in a solution that dissolves said top layer but which does not dissolve said bottom permanent layer to any substantial extent.
Claim 4
Dependent Claim 15 words
A method as in claim 2 wherein a surfactant is added to said etching solution.
Claim 5
Dependent Claim 21 words
A method as in claim 3 wherein said removal step is carried out in a container that is vibrated during etching.
Claim 6
Dependent Claim 13 words
A method as in claim 4 wherein said top sacrificial layer comprises chromium.
Claim 7
Independent Claim 197 words
A method of solder bonding comprising the steps of forming a conductive metallization pattern, including bonding pads, on the surface of forming a two-layer dam structure, including a top sacrificial layer and a bottom permanent layer, on each of said pads to define a portion of each pad to which solder is to be adhered, said dam structure being adapted to prevent molten solder from flowing from said defined pad portion to adjacent portions of the metallization pattern, forming respective solder bumps on said defined pad portions, removing the top sacrificial layer of said dam structure, and while maintaining conductive elements of an associated component in respective contact with said solder bumps, heating said solder bumps to bond said respective elements to said defined pad portions, wherein said removing step comprises etching said top sacrificial layer in a solution that dissolves said top layer but which does not dissolve said bottom permanent layer to any substantial extent, wherein a surfactant is added to said etching solution, wherein said removal step is carried out in a container that is vibrated during etching, wherein said top sacrificial layer comprises chromium, and wherein said bottom permanent layer comprises titanium nitride.
Claim 8
Independent Claim 197 words
A method of solder bonding comprising the steps of forming a conductive metallization pattern, including bonding pads, on the surface of forming a two-layer dam structure, including a top sacrificial layer and a bottom permanent layer, on each of said pads to define a portion of each pad to which solder is to be adhered, said dam structure being adapted to prevent molten solder from flowing from said defined pad portion to adjacent portions of the metallization pattern, forming respective solder bumps on said defined pad portions, removing the top sacrificial layer of said dam structure, and while maintaining conductive elements of an associated component in respective contact with said solder bumps, heating said solder bumps to bond said respective elements to said defined pad portions, wherein said removing step comprises etching said top sacrificial layer in a solution that dissolves said top layer but which does not dissolve said bottom permanent layer to any substantial extent, wherein a surfactant is added to said etching solution, wherein said removal step is carried out in a container that is vibrated during etching, wherein said top sacrificial layer comprises chromium, and wherein said bottom permanent layer comprises titanium nitride.
Claim 9
Dependent Claim 21 words
A method as in claim 6 wherein said etching solution comprises a mixture of ceric ammonium nitrate, acetic acid and water.
Claim 10
Dependent Claim 13 words
A method as in claim 7 wherein said surfactant comprises alkylaryl polyether alcohol.
Claim 11
Dependent Claim 16 words
A method as in claim 8 wherein said chromium layer is approximately 500-to-1000 Angstrom units thick.
Claim 12
Dependent Claim 17 words
A method as in claim 9 wherein said titanium nitride layer is approximately 250-to-500 Angstrom units thick.
Claim 13
Dependent Claim 18 words
A method as in claim 10 wherein said container is vibrated at 5-to-50 Hertz during the removal step.
Claim 14
Dependent Claim 14 words
A method as in claim 11 wherein said solder comprises a eutectic gold/tin mixture.

References Cited (Backward Citations)

US5162257A Cited
JPH05144815A Cited
US5496770A Cited
US5536677A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2000-04-14 2000-10-14 2001-04-15 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2004-04-14 2004-10-14 2005-04-15 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2008-04-14 2008-10-14 2009-04-15 $7700.00 Window Closed / Lapsed

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