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US5617438A
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US
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Semiconductor laser and method for manufacturing the same
Assignee: Toshiba Corp
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Filing: 1995-12-11
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Granted: 1997-04-01
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Expires: 2015-12-11
Abstract
Abstract A semiconductor laser having an oscillation wavelength of not more than 450 nm comprises a substrate, a lower cladding layer containing a III-V Group compound semiconductor as a main component formed on the substrate, an active layer containing the III-V Group compound semiconductor as a main component formed on the lower cladding layer and an upper p-type cladding layer containing III-V Group compound semiconductor as a main component. Mg and Si are contained in the upper p-type cladding layer. A GaN series compound semiconductor is preferably used as the III-V Group compound semiconductor and the upper cladding layer contains preferably not less than 5×10 18 /cm 3 of Si.
Inventors
- 👤 Ako Hatano
- 👤 Yasuo Ohba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 21:30
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341; H01S5/327; H01S2302/00
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
89 words
A semiconductor laser having an oscillation wavelength of not more than 450 nm, comprising: a substrate; a lower cladding layer formed on or over the substrate and containing a III-V Group compound semiconductor as a main component; an active layer formed on the lower cladding layer and containing the III-V Group semiconductor as a main component; and an upper p-type cladding layer formed on the active layer and containing the III-V Group semiconductor as a main component, wherein Mg and Si are included in the upper p-type cladding layer.
Claim 2
Dependent Claim
89 words
A semiconductor laser having an oscillation wavelength of not more than 450 nm, comprising: a substrate; a lower cladding layer formed on or over the substrate and containing a III-V Group compound semiconductor as a main component; an active layer formed on the lower cladding layer and containing the III-V Group semiconductor as a main component; and an upper p-type cladding layer formed on the active layer and containing the III-V Group semiconductor as a main component, wherein Mg and Si are included in the upper p-type cladding layer.
Claim 3
Dependent Claim
21 words
The semiconductor laser according to claim 1, wherein the III-V Group compound semiconductor is comprised of a GaN series compound semiconductor.
Claim 4
Dependent Claim
27 words
The semiconductor laser according to claim 2, wherein the concentration of Si in the upper p-type cladding layer is not less than 5×10 18 /cm 3 .
Claim 5
Dependent Claim
20 words
The semiconductor laser according to claim 2, wherein the thickness of the active layer is not more than 5 nm.
Claim 6
Dependent Claim
15 words
The semiconductor laser according to claim 2, wherein In is contained in the active layer.
Claim 7
Independent Claim
103 words
A method for manufacturing a semiconductor laser having an oscillation wavelength of not more than 450 nm comprising the steps of: forming a lower cladding layer containing a III-V Group compound semiconductor as a main component on or over a substrate; forming an active layer containing a III-V compound semiconductor as a main component on the lower cladding layer; and forming an upper p-type cladding layer containing the III-V Group compound semiconductor as a main component on the active layer, wherein, as a p-dopant source gas for the upper cladding layer, use is made of an Mg-containing feed gas and Si-containing feed gas.
Claim 8
Independent Claim
103 words
A method for manufacturing a semiconductor laser having an oscillation wavelength of not more than 450 nm comprising the steps of: forming a lower cladding layer containing a III-V Group compound semiconductor as a main component on or over a substrate; forming an active layer containing a III-V compound semiconductor as a main component on the lower cladding layer; and forming an upper p-type cladding layer containing the III-V Group compound semiconductor as a main component on the active layer, wherein, as a p-dopant source gas for the upper cladding layer, use is made of an Mg-containing feed gas and Si-containing feed gas.
Claim 9
Dependent Claim
19 words
The method according to claim 6, wherein the III-V Group compound semiconductor is comprised of GaN series compound semiconductor.
Claim 10
Dependent Claim
17 words
The method according to claim 7, wherein the active layer is not more than 5 nm thick.
References Cited (Backward Citations)
JPS5856329A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-03-31 | 2000-09-30 | 2001-04-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-31 | 2004-09-30 | 2005-04-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-31 | 2008-09-30 | 2009-04-01 | $7700.00 | Window Closed / Lapsed |