US5614438A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for making LSCO stack electrode
Assignee: Radiant Technologies Inc
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Filing: 1995-03-15
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Granted: 1997-03-25
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Expires: 2015-03-15
Abstract
Abstract A method for making an improved LSCO stack in the generation of platinum features on the surface of a substrate. The method provides an inexpensive means for depositing and etching LSCO material in the construction of small platinum features. The method comprises sputtering of the LSCO material and utilizing a photoresist mask to pattern the LSCO in accordance with the platinum features. The problems and expense associated with high-temperature deposition of LSCO on platinum and the etching thereof are overcome by sputtering the LSCO at room temperature.
Inventors
- 👤 Joseph T. Evans, Jr.
- 👤 Leonard Boyer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:45
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D64/00; H10D64/01; H10D64/011; H10D1/682; Y; Y10; Y10S; Y10S148/00; Y10S148/014; Y10S148/10
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
130 words
A method for depositing an electrode in a region of a substrate, said method comprising the steps of: depositing a first layer of a glue material on said substrate, said glue material being a material capable of bonding platinum to said substrate; masking said first layer in regions outside of said region by applying a layer of masking material on said regions; applying an etchant to said masked substrate, said etchant etching said first layer in regions not protected by said masking material; depositing a second layer of said glue material in said region; depositing a platinum layer in said region; depositing an amorphous ohmic contact material in said region; removing said masking material; and heating said ohmic contact material to a temperature sufficient to crystallize said ohmic contact material.
Claim 2
Independent Claim
130 words
A method for depositing an electrode in a region of a substrate, said method comprising the steps of: depositing a first layer of a glue material on said substrate, said glue material being a material capable of bonding platinum to said substrate; masking said first layer in regions outside of said region by applying a layer of masking material on said regions; applying an etchant to said masked substrate, said etchant etching said first layer in regions not protected by said masking material; depositing a second layer of said glue material in said region; depositing a platinum layer in said region; depositing an amorphous ohmic contact material in said region; removing said masking material; and heating said ohmic contact material to a temperature sufficient to crystallize said ohmic contact material.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein said step of depositing an ohmic contact material comprises sputtering said ohmic contact material at room temperature.
Claim 4
Dependent Claim
11 words
The method of claim 2 wherein said ohmic material is LSCO.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein said substrate is TiO 2 and said glue material is titanium.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-03-24 | 2000-09-23 | 2001-03-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-24 | 2004-09-23 | 2005-03-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-24 | 2008-09-23 | 2009-03-25 | $7700.00 | Window Closed / Lapsed |