Patent US5614428A successfully refreshed from Google Patents.
US5614428A
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Process and structure for reduction of channeling during implantation of source and drain regions in formation of MOS integrated circuit structures
Assignee: Bell Semiconductor LLC
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Filing: 1995-10-23
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Granted: 1997-03-25
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Expires: 2015-10-23
Abstract
Abstract A process and structure are disclosed for inhibiting the channeling of dopant through the polysilicon gate electrode into a semiconductor substrate during implantation of source and drain regions in the substrate during the formation of MOS devices. After deposition over a semiconductor substrate of a polysilicon layer which will be subsequently patterned to form a gate electrode, an amorphous layer of silicon is formed over the polysilicon layer. This amorphous silicon layer is then treated with a material such as a nitrogen-bearing material capable of inhibiting grain growth and recrystallization of the amorphous silicon during subsequent high temperature processing. The amorphous silicon and polysilicon layers are subsequently conventionally patterned to form the gate electrode. The structure is then implanted without channeling of the dopant ions through the gate electrode into the underlying portion of the substrate where the channel of the MOS device will be formed. The presence of the amorphous silicon over the polysilicon gate electrode inhibits the channeling of the implanted ions through the polysilicon layer, due to the amorphous (non-crystalline) structure of the amorphous silicon, while the treatment of the amorphous silicon with the material capable of inhibiting grain growth in the amorphous silicon prevents or inhibits the recrystallization of the amorphous silicon during subsequent processing before or during the implantation step to form the source and drain regions.
Inventors
- 👤 Ashok K. Kapoor
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:29
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10P; H10P30/00; H10P30/20; H10P30/22
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
153 words
A process for forming MOS devices in integrated circuit structures on a semiconductor substrate while inhibiting channeling of dopant through the gate electrode into said semiconductor substrate during implantation of said substrate to form source and drain regions therein which comprises: a) forming a layer of amorphous silicon over a layer of polysilicon previously formed over said semiconductor substrate; b) treating said amorphous layer of silicon with a material capable of inhibiting grain growth and recrystallization of said amorphous silicon; c) patterning both said amorphous silicon layer and said polysilicon layer to form a gate electrode; and d) implanting portions of said semiconductor substrate adjacent said gate electrode to form source and drain regions in said substrate; whereby the presence of said amorphous silicon over said polysilicon gate electrode inhibits channeling of said dopant through said polysilicon gate electrode during said implantation of said substrate to form said source and drain regions therein.
Claim 2
Dependent Claim
153 words
A process for forming MOS devices in integrated circuit structures on a semiconductor substrate while inhibiting channeling of dopant through the gate electrode into said semiconductor substrate during implantation of said substrate to form source and drain regions therein which comprises: a) forming a layer of amorphous silicon over a layer of polysilicon previously formed over said semiconductor substrate; b) treating said amorphous layer of silicon with a material capable of inhibiting grain growth and recrystallization of said amorphous silicon; c) patterning both said amorphous silicon layer and said polysilicon layer to form a gate electrode; and d) implanting portions of said semiconductor substrate adjacent said gate electrode to form source and drain regions in said substrate; whereby the presence of said amorphous silicon over said polysilicon gate electrode inhibits channeling of said dopant through said polysilicon gate electrode during said implantation of said substrate to form said source and drain regions therein.
Claim 3
Dependent Claim
41 words
The process of claim 1 wherein said step of treating said amorphous layer of silicon with a material capable of inhibiting grain growth and recrystallization of said amorphous silicon further comprises treating said amorphous layer of silicon with a nitrogen-containing material.
Claim 4
Dependent Claim
69 words
The process of claim 1 wherein said step of treating said amorphous layer of silicon with a material capable of inhibiting grain growth and recrystallization of said amorphous silicon further comprises treating said amorphous layer of silicon with a nitrogen-containing material selected from the group consisting of N 2 , NH 3 , NH 4 OH, N 2 H 4 , and N 2 H 2 (OH) 2 .
Claim 5
Dependent Claim
41 words
The process of claim 1 wherein said step of treating said amorphous layer of silicon with a material capable of inhibiting grain growth and recrystallization of said amorphous silicon further comprises treating said amorphous layer of silicon with NH 3 .
Claim 6
Dependent Claim
44 words
The process of claim 1 wherein said step of treating said amorphous layer of silicon with a material capable of inhibiting grain growth and recrystallization of said amorphous silicon further comprises treating said amorphous layer of silicon by implanting it with a nitrogen-containing material.
Claim 7
Dependent Claim
154 words
A process for forming MOS devices in integrated circuit structures on a semiconductor substrate while inhibiting channeling of dopant through the gate electrode into said semiconductor substrate during implantation of said substrate to form source and drain regions therein which comprises: a) forming a layer of amorphous silicon over a layer of polysilicon previously formed over said semiconductor substrate; b) treating said amorphous layer of silicon with a nitrogen-containing material capable of inhibiting grain growth and recrystallization of said amorphous silicon; c) patterning both said amorphous silicon layer and said polysilicon layer to form a gate electrode; and d) implanting portions of said semiconductor substrate adjacent said gate electrode to form source and drain regions in said substrate; whereby the presence of said amorphous silicon over said polysilicon gate electrode inhibits channeling of said dopant through said polysilicon gate electrode during said implantation of said substrate to form said source and drain regions therein.
Claim 8
Dependent Claim
154 words
A process for forming MOS devices in integrated circuit structures on a semiconductor substrate while inhibiting channeling of dopant through the gate electrode into said semiconductor substrate during implantation of said substrate to form source and drain regions therein which comprises: a) forming a layer of amorphous silicon over a layer of polysilicon previously formed over said semiconductor substrate; b) treating said amorphous layer of silicon with a nitrogen-containing material capable of inhibiting grain growth and recrystallization of said amorphous silicon; c) patterning both said amorphous silicon layer and said polysilicon layer to form a gate electrode; and d) implanting portions of said semiconductor substrate adjacent said gate electrode to form source and drain regions in said substrate; whereby the presence of said amorphous silicon over said polysilicon gate electrode inhibits channeling of said dopant through said polysilicon gate electrode during said implantation of said substrate to form said source and drain regions therein.
Claim 9
Dependent Claim
45 words
The process of claim 6 wherein said step of forming said amorphous silicon layer over said polysilicon layer further comprises forming said amorphous silicon layer at a temperature not exceeding about 550° C. to avoid crystallizing portions of said amorphous silicon layer during said formation.
Claim 10
Dependent Claim
41 words
The process of claim 6 wherein said step of treating said amorphous silicon layer with said nitrogen-containing material further comprises treating said amorphous silicon layer until at least about 2 wt. % of said treated amorphous silicon layer consists of nitrogen.
Claim 11
Dependent Claim
45 words
The process of claim 6 wherein said step of treating said amorphous silicon layer with said nitrogen-containing material further comprises treating said amorphous silicon layer until from about 2 wt. % to about 10 wt. % of said treated amorphous silicon layer consists of nitrogen.
Claim 12
Dependent Claim
40 words
The process of claim 6 wherein said step of treating said amorphous silicon layer with said nitrogen-containing material further comprises treating said amorphous silicon layer at a temperature sufficiently low to inhibit recrystallization of said amorphous silicon during said treatment.
Claim 13
Dependent Claim
59 words
The process of claim 6 wherein said step of treating said amorphous layer of silicon with said nitrogen-containing material further comprises treating said amorphous layer of silicon with a nitrogen-containing material selected from the group consisting of N 2 , NH 3 , NH 4 OH, N 2 H 4 , and N 2 H 2 (OH) 2 .
Claim 14
Dependent Claim
190 words
A process for forming MOS devices in integrated circuit structures on a semiconductor substrate while inhibiting channeling of dopant through the gate electrode into said semiconductor substrate during implantation of said substrate to form source and drain regions therein which comprises: a) forming a layer of amorphous silicon over a layer of polysilicon previously formed over said semiconductor substrate at a temperature sufficiently low to inhibit recrystallization of said amorphous silicon on said polysilicon layer; b) treating said amorphous layer of silicon with ammonia at a temperature insufficient to recrystallize said amorphous silicon until said amorphous silicon contains at least about 2 wt. % of nitrogen to thereby inhibit grain growth and recrystallization of said amorphous silicon; c) patterning both said amorphous silicon layer and said polysilicon layer to form a gate electrode; and d) implanting portions of said semiconductor substrate adjacent said gate electrode to form source and drain regions in said substrate; whereby the presence of said amorphous silicon over said polysilicon gate electrode inhibits channeling of said dopant through said polysilicon gate electrode during said implantation of said substrate to form said source and drain regions therein.
Claim 15
Dependent Claim
190 words
A process for forming MOS devices in integrated circuit structures on a semiconductor substrate while inhibiting channeling of dopant through the gate electrode into said semiconductor substrate during implantation of said substrate to form source and drain regions therein which comprises: a) forming a layer of amorphous silicon over a layer of polysilicon previously formed over said semiconductor substrate at a temperature sufficiently low to inhibit recrystallization of said amorphous silicon on said polysilicon layer; b) treating said amorphous layer of silicon with ammonia at a temperature insufficient to recrystallize said amorphous silicon until said amorphous silicon contains at least about 2 wt. % of nitrogen to thereby inhibit grain growth and recrystallization of said amorphous silicon; c) patterning both said amorphous silicon layer and said polysilicon layer to form a gate electrode; and d) implanting portions of said semiconductor substrate adjacent said gate electrode to form source and drain regions in said substrate; whereby the presence of said amorphous silicon over said polysilicon gate electrode inhibits channeling of said dopant through said polysilicon gate electrode during said implantation of said substrate to form said source and drain regions therein.
Claim 16
Dependent Claim
31 words
The process of claim 12 including the further step of converting said amorphous silicon into crystalline silicon after said step of implanting said substrate to form said source and drain regions.
References Cited (Backward Citations)
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