III-V compound semiconductor device with Schottky electrode of increased barrier height

Claim 2

A field effect compound semiconductor device comprising: a GaAs semiconductor substrate; a plurality of group III-V compound semiconductor crystal layers formed on said GaAs semiconductor substrate and including an active layer for transferring carriers; an InAlP layer substantially lattice-matched with GaAs formed at least on a partial surface of said group III-V compound semiconductor crystal layers; a gate electrode formed on said InAlP layer, forming Schottky contact; and a pair of source/drain electrodes disposed to interpose therebetween said gate electrode, and forming ohmic contact with said active layer.

Claim 3

A field effect compound semiconductor device according to claim 1, wherein said active layer is made of n-type GaAs or n-type InGaAs.

Claim 4

A field effect compound semiconductor device according to claim 2, wherein said group III-V compound semiconductor crystal layers further include an AlGaAs layer or an InGaP layer formed on said active layer.

Claim 5

A field effect compound semiconductor device according to claim 3, wherein said InAlP layer is formed only on a partial surface of said group III-V compound semiconductor crystal layers, the device further comprising an n-type GaAs layer or an n-type InGaAs layer formed on the surface of said group III-V compound semiconductor crystal layers and interposing therebetween said InAlP layer.

Claim 6

A field effect compound semiconductor device comprising: a GaAs semiconductor substrate; a group III-V compound semiconductor crystal layer formed on said GaAs semiconductor substrate for transferring carriers in the surface region of said layer; an InAlP crystal layer substantially lattice-matched with GaAs, and formed at least on a partial surface of said group III-V compound semiconductor crystal layer; a gate electrode formed on said InAlP crystal layer, forming a Schottky contact; and a pair of source/drain electrodes interposing therebetween said gate electrode, and forming the ohmic contact with said group III-V compound semiconductor crystal layer.

Claim 7

A field effect compound semiconductor device comprising: a GaAs semiconductor substrate; a group III-V compound semiconductor crystal layer formed on said GaAs semiconductor substrate for transferring carriers in the surface region of said layer; an InAlP crystal layer substantially lattice-matched with GaAs, and formed at least on a partial surface of said group III-V compound semiconductor crystal layer; a gate electrode formed on said InAlP crystal layer, forming a Schottky contact; and a pair of source/drain electrodes interposing therebetween said gate electrode, and forming the ohmic contact with said group III-V compound semiconductor crystal layer.

Claim 8

A field effect compound semiconductor device according to claim 5, wherein said group III-V compound semiconductor crystal layer is made of GaAs or InGaAs.

Claim 9

A field effect compound semiconductor device comprising: an InP substrate; an InGaAs channel layer formed on said InP substrate, said InGaAs channel layer providing substantially a lattice match with InP; an InAlAs layer formed directly on said InGaAs channel layer; an InAlP layer formed at least on a partial surface of said InAlAs layer; a gate electrode formed on said InAlP layer and forming Schottky contact; and a pair of source/drain electrodes interposing therebetween said gate electrode, and forming ohmic contact with said InGaAs channel layer.

Claim 10

A field effect compound semiconductor device comprising: an InP substrate; an InGaAs channel layer formed on said InP substrate, said InGaAs channel layer providing substantially a lattice match with InP; an InAlAs layer formed directly on said InGaAs channel layer; an InAlP layer formed at least on a partial surface of said InAlAs layer; a gate electrode formed on said InAlP layer and forming Schottky contact; and a pair of source/drain electrodes interposing therebetween said gate electrode, and forming ohmic contact with said InGaAs channel layer.

Claim 11

A field effect compound semiconductor device according to claim 7, wherein said InAlP layer has a thickness of 5 nm or less.

Claim 12

A field effect compound semiconductor device comprising: a semiconductor substrate; a plurality of group III-V compound semiconductor crystal layers formed on said semiconductor substrate and including an active layer for transferring carriers; an InAlP layer formed only on a partial surface of said group III-V compound semiconductor crystal layers; a gate electrode formed on said InAlP layer, forming Schottky contact; and a pair of source/drain electrodes disposed to interpose therebetween said gate electrode, and forming ohmic contact with said active layer; wherein said group III-V compound semiconductor crystal layers further include an AlGaAs layer or an InGaP layer formed on said active layer; and wherein said field effect compound semiconductor device further comprises an n-type GaAs layer or an n-type InGaAs layer formed on the surface of said group III-V compound semiconductor crystal layers and interposing therebetween said InAlP layer.

Claim 13

A field effect compound semiconductor device comprising: a semiconductor substrate; a plurality of group III-V compound semiconductor crystal layers formed on said semiconductor substrate and including an active layer for transferring carriers; an InAlP layer formed only on a partial surface of said group III-V compound semiconductor crystal layers; a gate electrode formed on said InAlP layer, forming Schottky contact; and a pair of source/drain electrodes disposed to interpose therebetween said gate electrode, and forming ohmic contact with said active layer; wherein said group III-V compound semiconductor crystal layers further include an AlGaAs layer or an InGaP layer formed on said active layer; and wherein said field effect compound semiconductor device further comprises an n-type GaAs layer or an n-type InGaAs layer formed on the surface of said group III-V compound semiconductor crystal layers and interposing therebetween said InAlP layer.

Claim 14

A field effect compound semiconductor device comprising: a semiconductor substrate; a plurality of group III-V compound semiconductor crystal layers formed on and lattice-matched with said semiconductor substrate and including an active layer for transferring carriers; an InAlP layer substantially lattice-matched with said substrate, and formed at least on a partial surface of said group III-V compound semiconductor crystal layers; a gate electrode formed on said InAlP layer, forming Schottky contact; and a pair of source/drain electrodes disposed to interpose therebetween said gate electrode, and forming ohmic contact with said active layer.

Claim 15

A field effect compound semiconductor device comprising: a semiconductor substrate; a plurality of group III-V compound semiconductor crystal layers formed on and lattice-matched with said semiconductor substrate and including an active layer for transferring carriers; an InAlP layer substantially lattice-matched with said substrate, and formed at least on a partial surface of said group III-V compound semiconductor crystal layers; a gate electrode formed on said InAlP layer, forming Schottky contact; and a pair of source/drain electrodes disposed to interpose therebetween said gate electrode, and forming ohmic contact with said active layer.

Claim 16

A field effect compound semiconductor device according to claim 10, wherein semiconductor substrate is made of GaAs, and said active layer is made of n-type GaAs or n-type InGaAs.

Claim 17

A field effect compound semiconductor device according to claim 11, wherein said group III-V compound semiconductor crystal layers further include an AlGaAs layer or an InGaP layer formed on said active layer.

Claim 18

A field effect compound semiconductor device according to claim 12, wherein said InAlP layer is formed only on a partial surface of said group III-V compound semiconductor crystal layers, the device further comprising an n-type GaAs layer or an n-type InGaAs layer formed on the surface of said group III-V compound semiconductor crystal layers and interposing therebetween said InAlP layer.

Claim 19

A field effect compound semiconductor device comprising: a semiconductor substrate; a group III-V compound semiconductor crystal layer formed on and lattice-matched with said semiconductor substrate for transferring carriers in the surface region of said layer; an InAlP crystal layer substantially lattice-matched with said semiconductor substrate, and formed at least on a partial surface of said group III-V compound semiconductor crystal layer; a gate electrode formed on said InAlP crystal layer, forming a Schottky contact; and a pair of source/drain electrodes interposing therebetween said gate electrode, and forming the ohmic contact with said group III-V compound semiconductor crystal layer.

Claim 20

A field effect compound semiconductor device comprising: a semiconductor substrate; a group III-V compound semiconductor crystal layer formed on and lattice-matched with said semiconductor substrate for transferring carriers in the surface region of said layer; an InAlP crystal layer substantially lattice-matched with said semiconductor substrate, and formed at least on a partial surface of said group III-V compound semiconductor crystal layer; a gate electrode formed on said InAlP crystal layer, forming a Schottky contact; and a pair of source/drain electrodes interposing therebetween said gate electrode, and forming the ohmic contact with said group III-V compound semiconductor crystal layer.

Claim 21

A field effect compound semiconductor device according to claim 14, wherein said group III-V compound semiconductor crystal layer is made of GaAs or InGaAs.

Claim 22

A field effect compound semiconductor device comprising: a semiconductor substrate; a plurality of group III-V compound semiconductor crystal layers formed on said semiconductor substrate and including an active layer for transferring carriers; an InAlP layer formed at least on a partial surface of said group III-V compound semiconductor crystal layers; a gate electrode formed on said InAlP layer, forming Schottky contact; and a pair of source/drain electrodes disposed to interpose therebetween said gate electrode, and forming ohmic contact with said active layer; wherein said InAlP layer is formed only on a partial surface of said group III-V compound semiconductor crystal layers, the device further comprising an n-type GaAs layer or an n-type InGaAs layer formed on the surface of said group III-V compound semiconductor crystal layers and interposing therebetween said InAlP layer.

Claim 23

A field effect compound semiconductor device comprising: a semiconductor substrate; a plurality of group III-V compound semiconductor crystal layers formed on said semiconductor substrate and including an active layer for transferring carriers; an InAlP layer formed at least on a partial surface of said group III-V compound semiconductor crystal layers; a gate electrode formed on said InAlP layer, forming Schottky contact; and a pair of source/drain electrodes disposed to interpose therebetween said gate electrode, and forming ohmic contact with said active layer; wherein said InAlP layer is formed only on a partial surface of said group III-V compound semiconductor crystal layers, the device further comprising an n-type GaAs layer or an n-type InGaAs layer formed on the surface of said group III-V compound semiconductor crystal layers and interposing therebetween said InAlP layer.

Claim 24

A field effect compound semiconductor device according to claim 16, wherein said semiconductor substrate is made of GaAs, and said active layer is made of n-type GaAs or n-type InGaAs.

Claim 25

A field effect compound semiconductor device according to claim 17, wherein said group III-V compound semiconductor crystal layers further include an AlGaAs layer or an InGaP layer formed on said active layer.