US5609721A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device manufacturing apparatus and its cleaning method
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1995-01-03
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Granted: 1997-03-11
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Expires: 2015-01-03
Abstract
Abstract An apparatus and method for manufacturing a semiconductor device includes a reaction chamber adapted to exhaust gas therefrom, and a cleaning gas supplying system for introducing cleaning gas containing ClF 3 into the reaction chamber, the system having a plurality of gas blowout holes formed in the flow direction of gas at least in the reaction chamber. The reaction chamber may be a tubular chamber, and the cleaning gas supplying system may be a tube extending from one end to the other end of the reaction chamber along the inner wall or the central axis of the reaction chamber, a plurality of through holes being formed in the side wall of the tube. Damages to the inner surface of the reaction chamber of the semiconductor device manufacturing apparatus can be suppressed and a film attached to the inner wall of the reaction chamber can be removed in a short time.
Inventors
- 👤 Atsuhiro Tsukune
- 👤 Kiyokatsu Suzuki
- 👤 Katsuyoshi Matsuura
- 👤 Fumitake Mieno
- 👤 Hirokazu Yamanishi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:43
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45561; H; H10; H10P; H10P52/00; C23C16/4401; C23C16/4405; C23C16/4412; H10P72/00; H10P72/04; H10P72/0402; H10P72/0406; Y; Y10; Y10S; Y10S438/00; Y10S438/905
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
44 words
A method of cleaning a reaction chamber of a semiconductor device manufacturing apparatus by supplying cleaning gas containing ClF 3 to said reaction chamber, said reaction chamber being adapted to exhaust gas therefrom, comprising the step of: adding alcohol vapor to said cleaning gas.
Claim 2
Independent Claim
44 words
A method of cleaning a reaction chamber of a semiconductor device manufacturing apparatus by supplying cleaning gas containing ClF 3 to said reaction chamber, said reaction chamber being adapted to exhaust gas therefrom, comprising the step of: adding alcohol vapor to said cleaning gas.
Claim 3
Dependent Claim
21 words
A method according to claim 1, wherein said alcohol vapor is a vapor of alcohol having one to five carbon atoms.
Claim 4
Dependent Claim
22 words
A method according to claim 1, wherein a concentration of said alcohol vapor in ClF 3 is 0.1 to 50 mol %.
Claim 5
Dependent Claim
28 words
A method according to claim 1, further comprising the step of changing a partial pressure of said alcohol vapor contained in said cleaning gas during a cleaning process.
Claim 6
Dependent Claim
22 words
A method according to claim 1, wherein said cleaning gas is ClF 3 having a concentration of 60 mol % or higher.
Claim 7
Dependent Claim
16 words
A method according to claim 5, wherein said cleaning gas consists essentially of ClF 3 .
Claim 8
Independent Claim
113 words
A method of removing a film attached to the inner wall of a reaction chamber of a semiconductor device manufacturing apparatus by supplying cleaning gas containing ClF 3 to said reaction chamber, said reaction chamber being adapted to exhaust gas therefrom, comprising the steps of: supplying said cleaning gas to said reaction chamber under a first cleaning condition at the initial stage of cleaning; and changing said cleaning condition so as to lower an etching rate by said cleaning gas of a material constituting said reaction chamber than an etching rate under said first cleaning condition at the initial stage of cleaning, wherein said changing step changes the temperature of said cleaning gas.
Claim 9
Independent Claim
113 words
A method of removing a film attached to the inner wall of a reaction chamber of a semiconductor device manufacturing apparatus by supplying cleaning gas containing ClF 3 to said reaction chamber, said reaction chamber being adapted to exhaust gas therefrom, comprising the steps of: supplying said cleaning gas to said reaction chamber under a first cleaning condition at the initial stage of cleaning; and changing said cleaning condition so as to lower an etching rate by said cleaning gas of a material constituting said reaction chamber than an etching rate under said first cleaning condition at the initial stage of cleaning, wherein said changing step changes the temperature of said cleaning gas.
Claim 10
Dependent Claim
22 words
A method according to claim 7, wherein said cleaning gas is ClF 3 having a concentration of 60 mol % or higher.
Claim 11
Dependent Claim
16 words
A method according to claim 8, wherein said cleaning gas consists essentially of ClF 3 .
Claim 12
Independent Claim
100 words
A method of removing a film attached to the inner wall of a reaction chamber of a semiconductor device manufacturing apparatus by supplying cleaning gas containing ClF 3 to said reaction chamber, said reaction chamber being adapted to exhaust gas therefrom, comprising the steps of: supplying said cleaning gas to said reaction chamber only via some of a plurality of gas inlet ports provided for said reaction chamber; switching said gas inlet ports to stop supplying said cleaning gas via some of said gas inlet ports, and to start supplying said cleaning gas via another of said gas inlet ports.
Claim 13
Independent Claim
100 words
A method of removing a film attached to the inner wall of a reaction chamber of a semiconductor device manufacturing apparatus by supplying cleaning gas containing ClF 3 to said reaction chamber, said reaction chamber being adapted to exhaust gas therefrom, comprising the steps of: supplying said cleaning gas to said reaction chamber only via some of a plurality of gas inlet ports provided for said reaction chamber; switching said gas inlet ports to stop supplying said cleaning gas via some of said gas inlet ports, and to start supplying said cleaning gas via another of said gas inlet ports.
Claim 14
Dependent Claim
17 words
A method according to claim 10, wherein said switching step is performed at least twice or more.
Claim 15
Dependent Claim
34 words
A method according to claim 10, wherein said switching step switches said gas inlet ports in the order from an upstream region to a downstream region of a gas flow in said reaction chamber.
Claim 16
Dependent Claim
22 words
A method according to claim 10, wherein said cleaning gas is ClF 3 having a concentration of 60 mol % or higher.
Claim 17
Dependent Claim
16 words
A method according to claim 13, wherein said cleaning gas consists essentially of ClF 3 .
Claim 18
Dependent Claim
124 words
A cleaning method for cleaning a CVD furnace having a quartz reaction tube open at opposite ends, gas supply means connected to one end of said reaction tube, gas evacuation means connected to the other end of said reaction tube and having at least a first stage gas evacuation system, and a heater disposed surrounding said reaction tube, said cleaning method comprising the steps of: introducing a cleaning gas from said gas supply means into said reaction tube in a heated state, said cleaning gas containing ClF 3 having a concentration of 60 mol % or more; and mixing an inert gas with said cleaning gas at the position at least downstream of the first stage gas evacuation system of said gas evacuation means.
Claim 19
Dependent Claim
124 words
A cleaning method for cleaning a CVD furnace having a quartz reaction tube open at opposite ends, gas supply means connected to one end of said reaction tube, gas evacuation means connected to the other end of said reaction tube and having at least a first stage gas evacuation system, and a heater disposed surrounding said reaction tube, said cleaning method comprising the steps of: introducing a cleaning gas from said gas supply means into said reaction tube in a heated state, said cleaning gas containing ClF 3 having a concentration of 60 mol % or more; and mixing an inert gas with said cleaning gas at the position at least downstream of the first stage gas evacuation system of said gas evacuation means.
Claim 20
Dependent Claim
16 words
A method according to claim 15, wherein said cleaning gas consists essentially of ClF 3 .
Claim 21
Dependent Claim
38 words
A method according to claim 15, wherein said step of introducing the cleaning gas is performed by mounting a baffle plate at or near a position in the reaction tube corresponding to a front end of the heater.
Claim 22
Dependent Claim
23 words
A method according to claim 15, wherein said first stage gas evacuation system of said gas evacuation means is a mechanical booster pump.
Claim 23
Independent Claim
59 words
A method of cleaning a reaction chamber of a semiconductor device manufacturing apparatus by supplying cleaning gas containing ClF 3 to the reaction chamber, with an interior of the reaction chamber being at an elevated temperature, the reaction chamber being adapted to exhaust gas therefrom, said method further comprising the step of adding alcohol vapor to said cleaning gas.
Claim 24
Independent Claim
59 words
A method of cleaning a reaction chamber of a semiconductor device manufacturing apparatus by supplying cleaning gas containing ClF 3 to the reaction chamber, with an interior of the reaction chamber being at an elevated temperature, the reaction chamber being adapted to exhaust gas therefrom, said method further comprising the step of adding alcohol vapor to said cleaning gas.
Claim 25
Independent Claim
109 words
A method of removing a film attached to the inner wall of a reaction chamber of a semiconductor device manufacturing apparatus by supplying cleaning gas containing ClF 3 to said reaction chamber, said reaction chamber being adapted to exhaust gas therefrom, comprising the steps of: maintaining said reaction chamber at an elevated temperature; supplying said cleaning gas to said reaction chamber only via some of a plurality of gas inlet ports provided for said reaction chamber; and switching said gas inlet ports to stop supplying said cleaning gas via some of said gas inlet ports, and to start supplying said cleaning gas via another of said gas inlet ports.
Claim 26
Independent Claim
109 words
A method of removing a film attached to the inner wall of a reaction chamber of a semiconductor device manufacturing apparatus by supplying cleaning gas containing ClF 3 to said reaction chamber, said reaction chamber being adapted to exhaust gas therefrom, comprising the steps of: maintaining said reaction chamber at an elevated temperature; supplying said cleaning gas to said reaction chamber only via some of a plurality of gas inlet ports provided for said reaction chamber; and switching said gas inlet ports to stop supplying said cleaning gas via some of said gas inlet ports, and to start supplying said cleaning gas via another of said gas inlet ports.
Claim 27
Dependent Claim
132 words
A cleaning method for cleaning a CVD furnace having a quartz reaction tube open at opposite ends, gas supply means connected to one end of said reaction tube, gas evacuation means connected to the other end of said reaction tube and having at least a first stage gas evacuation system, and a heater disposed surrounding said reaction tube, said cleaning method comprising the steps of: maintaining the reaction tube at an elevated temperature; introducing a cleaning gas from said gas supply means into said reaction tube in a heated state, said cleaning gas containing ClF 3 having a concentration of 60 mol % or more; and mixing an inert gas with said cleaning gas at the position at least downstream of the first stage gas evacuation system of said gas evacuation means.
Claim 28
Dependent Claim
132 words
A cleaning method for cleaning a CVD furnace having a quartz reaction tube open at opposite ends, gas supply means connected to one end of said reaction tube, gas evacuation means connected to the other end of said reaction tube and having at least a first stage gas evacuation system, and a heater disposed surrounding said reaction tube, said cleaning method comprising the steps of: maintaining the reaction tube at an elevated temperature; introducing a cleaning gas from said gas supply means into said reaction tube in a heated state, said cleaning gas containing ClF 3 having a concentration of 60 mol % or more; and mixing an inert gas with said cleaning gas at the position at least downstream of the first stage gas evacuation system of said gas evacuation means.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-03-10 | 2000-09-09 | 2001-03-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-10 | 2004-09-09 | 2005-03-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-10 | 2008-09-09 | 2009-03-11 | $7700.00 | Window Closed / Lapsed |