Abstract An improved heterojunction bipolar transistor power amplifier circuit providing an efficient and linear amplifier comprising: a first heterojunction bipolar transistor (HBT) having a base emitter voltage; a power supply; a power supply resistor connected to the power supply causing DC current to flow through the first HBT which develops a resultant voltage equal to the base emitter voltage of the first HBT; at least two manifold base resistors; at least two output HBTs, each of which receive the resultant voltage through its corresponding manifold base resistor; a RF signal input; at least two segmented capacitors, each coupled in parallel to receive the RF signal input and to the input of each corresponding output HBT; the segmented capacitors having a common input connected to the RF signal input and having individual outputs that are DC isolated from each other and which are connected to each output HBT; a RF output signal obtained from the parallel connection of the output HBTs; and provided that each HBT is connected to ground.
An improved heterojunction bipolar transistor power amplifier circuit comprising: a first heterojunction bipolar transistor (HBT) having a base emitter voltage; a power supply; a power supply resistor connected to the power supply causing DC current to flow through the first HBT which develops a resultant voltage equal to the base emitter voltage of the first HBT; at least two manifold base resistors; at least two output HBTs, each of which receive the resultant voltage through its corresponding manifold base resistor; a RF signal input; at least two capacitors formed from a segmented capacitor, each coupled in parallel to receive the RF signal input and to the input of each corresponding output HBT; the capacitors having a common input connected to the RF signal input and having individual outputs that are DC isolated from each other and which are connected to each output HBT; a RF output signal obtained from the parallel connection of the output HBTs; and provided that each HBT is connected to ground.
Claim 2
Dependent Claim
165 words
An improved heterojunction bipolar transistor power amplifier circuit comprising: a first heterojunction bipolar transistor (HBT) having a base emitter voltage; a power supply; a power supply resistor connected to the power supply causing DC current to flow through the first HBT which develops a resultant voltage equal to the base emitter voltage of the first HBT; at least two manifold base resistors; at least two output HBTs, each of which receive the resultant voltage through its corresponding manifold base resistor; a RF signal input; at least two capacitors formed from a segmented capacitor, each coupled in parallel to receive the RF signal input and to the input of each corresponding output HBT; the capacitors having a common input connected to the RF signal input and having individual outputs that are DC isolated from each other and which are connected to each output HBT; a RF output signal obtained from the parallel connection of the output HBTs; and provided that each HBT is connected to ground.
Claim 3
Dependent Claim
26 words
The improved heterojunction bipolar transistor power amplifier circuit of claim 1, wherein said power supply is a linear bias supply that enhances linearity of the circuit.
Claim 4
Dependent Claim
91 words
The improved heterojunction bipolar transistor power amplifier circuit of claim 1, whereby the segmented capacitor comprises a top plate; a bottom plate connected to, but electrically isolated from, the top plate; a two plate capacitor formed wherever the top plate overlaps the bottom plate with a capacitance determined by the area of the overlap; a RF input connected to the bottom plate; the top plate having areas used to AC connect to the output HBTs in such a manner to allow the two plate capacitor to remain isolated from DC voltages.